• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1429-1435
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• 2004

In this work, high performance broadband amplifier MMIC including all the matching and biasing components, and electrostatic discharge (ESD) protection circuit was developed for K/Ka band applications. Therefore, external biasing or matching components were not required for the operation of the MMIC. STO (SrTiO3) capacitors were employed to integrate the DC biasing components on the MMIC, and miniaturized LC parallel ESD protection circuit was integrated on MMIC, which increased ESD breakdown voltage from 10 to 300 V. A pre-matching technique and RC parallel circuit were used for the broadband design of the amplifier MMIC. The amplifier MMIC exhibited good RF performances and good stability in a wide frequency range. The chip size of the MMICs was $1.7{\pm}0.8$ mm2.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.60-67
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• 2010

We designed Average Current Control PFC IC which has make the average value of boost inductor current became the shape of sine wave. Designed IC has fixed frequency of 75kHz to meet EMI standard requirement. And also RC compensation loop has been designed into the error amp and the current amp, in order that it has wide bandwidth for high speed control. And we use the oscillator which generates by square wave and triangle wave, and add to UVLO, OVP, OCP, TSD which is in order to operate stability. We simulated by using Spectre of Cadence to verify the unity power factor function and various protection circuits and fabricated in a $1{\mu}m$ High Voltage(20V) CMOS process.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.4
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• pp.67-72
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• 2022

This study presents the design of power amplifier (PA) in 60 nm GaN/Si HEMT technology. A customized transistor model enables the designing circuits operating at W-band. The all matching network of the PA was composed of equivalent transformer circuit to reduce matching loss. And then, equivalent transformer is several advantages without any additional inductive devices so that a wideband power characteristic can be achieved. The designed die area is 3900 ㎛ × 2300 ㎛. The designed results at center frequency achieved the small signal gain of 15.9 dB, the saturated output power (Psat) of 29.9 dBm, and the power added efficiency (PAE) of 24.2% at the supply voltage of 12 V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2395-2402
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• 2013

An active-RC channel selection filter (CSF) with the bandwidth of 40MHz and the improved linearity is proposed in this paper. The proposed CSF is the fifth butterworth filter which consists of a first order low pass filter, two second order low pass filters of a biquad architecture, and DC feedback circuit for cancellation of DC offset. To improve the linearity of the CSF, a body node of a MOSFET for a switch is connected to its source node. The bandwidth of the designed CSF is selected to be 10MHz, 20MHz and 40MHz and its voltage gain is controlled by 6 dB from 0 dB to 24 dB. The proposed CSF is designed by using 40nm 1-poly 8-metal CMOS process with a 1.2V. When the designed CSF operates at the bandwidth of 40 MHz and voltage gain of 0 dB, the simulation results of OIP3, in-band ripple, and IRN are 31.33dBm, 1.046dB, and 39.81nV/sqrt(Hz), respectively. The power consumption and layout area are $450{\times}210{\mu}m^2$ and 6.71mW.

• Journal of the Korea Society of Computer and Information
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• v.3 no.2
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• pp.77-84
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• 1998

The continuous time signal system by development of CMOS technology have been receiving consideration attention. In this paper, Low pass filter using CMOS floating resistor have been designed with cut off frequency for speech signal processing. Especially a new floating resistor consisting entirely of CMOS devices in saturation has been developed. Linearity within $\pm$0.04% is achieved through nonlineartiy via current mirrors over an applied range of $\pm$1V. The frequency response exceeds 10MHz, and the resistors are expected to be useful in implementing integrated circuit active RC filters. The low pass filter designed using this method has simpler structure than switched capacitor filter. So reduce the chip area. The characteristics of the designed low pass filter using this method are simulated by pspice program.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.6
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• pp.481-487
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• 2009

This paper proposes a regulation method of DC line voltage for urban transit system fluctuated during the acceleration or deceleration by using supercapacitor. Supercapacitor is modelled electrically under the assumption of three different time constants of RC circuits with variable capacitances depending on the voltage. And its parameters are determined by the experimental measurements. The energy storage system using supercapacitors is installed based on this model, and the proposed model is tested through the simulations and experiments, and the controller for charging and discharging is designed. Finally, it is tested at Kyoungsan test site for the urban light rail road system and the energy saving effect is evaluated economically.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.1
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• pp.88-95
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• 2004

Micro stepping method is adopted in order to eliminate effectively the resonant phenomena and to increase the positional resolution. Exist micro-step method by using Sinusoidal waveform, drive circuit is complex by using micro controller and ROM, it have fault on cost Increase. This paper proposed trapezoidal current wave form for simple control circuit and micro stepping method by using a low cost controller. This paper proposed method verify by using CPLD(EPM9320RC208-15) of low cost. This paper make experiment that comparison of exist method and proposed method. This paper obstruct a escape of motor by using high speed detect.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.6
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• pp.560-566
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• 2004

In this paper, active frequency doubler with broadband characteristics from 6 ㎓ to 12 ㎓ was designed and fabricated using PHEMT. The designed frequency multiplier has a bias point near pinch-off and a proposed series RC circuit between bias line and input matching network far the improvement of stability. With 0 ㏈m input power, second harmonic of 1.7 ㏈m at 12 ㎓ -27.5 ㏈c suppression of 6 ㎓ fundamental, -18 ㏈c suppression of 18 ㎓ 3rd harmonic, and the 3 ㏈ output bandwidth of 1,8 ㎓ have been measured.

• Journal of Advanced Navigation Technology
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• v.23 no.4
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• pp.309-315
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• 2019

This paper proposes an implementation of unequal power divider with 1:3 and 1:4 splitting ratio in multi-section structure using CPW and offset coupled transmission line. The power divider consists of a multi-section transmission line and a circuit with parallel capacitors and resistors. A multi-section transmission line was implemented by decomposing a ${\lambda}/4$ single transmission line terminated by an arbitrary impedance and converging it with a multi-section transmission line shorter than $90^{\circ}$ electrical length, and RC parallel circuits were connected between transmission lines to obtain reflection coefficient of output port and isolation characteristics between the output port. In this way, it was confirmed that the transmission lines at the unequal power divider designed at 2 GHz were shorter than ${\lambda}/4$ and implemented at least 27% less than the conventional ones, and that the broadband characteristics could be obtained.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.25-31
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• 2016

Parasitic capacitance and resistance of FinFET transistors are the important components that determine the frequency performance of the circuit. Therefore, the researchers in our group developed more accurate parasitic capacitance and resistance for FinFETs than BSIM-CMG. To verify the RF performance, proposed model was applied to design an LNA that has $S_{21}$ more than 10dB and center frequency more than 60GHz using HSPICE. To verify the accuracy of the proposed model, mixed-mode capability of 3D TCAD simulator Sentaurus was used. $S_{21}$ of LNA was chosen as a reference to estimate the error. $S_{21}$ of proposed model showed 87.5% accuracy compared to that of Sentaurus in 10GHz~100GHz frequency range. The $S_{21}$ accuracy of BSIM-CMG model was 56.5%, so by using the proposed model, the accuracy of the circuit simulator improved by 31%. This results validates the accuracy of the proposed model in RF domain and show that the accuracies of the parasitic capacitance and resistance are critical in accurately predicting the LNA performance.