• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.3
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• pp.201-207
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• 2012

A RAM-based neural network is a weightless neural network based on binary neural network(BNN) which is efficient neural network with a one-shot learning. RAM-based neural network has multiful information bits and store counts of training in BNN. Supervised learning based on the RAM-based neural network has the excellent performance in pattern recognition but in pattern categorization with unsupervised learning as unsuitable. In this paper, we propose a unsupervised learning algorithm in the RAM-based neural network to perform pattern categorization. By the proposed unsupervised learning algorithm, RAM-based neural network create categories depending on the input pattern by itself. Therefore, RAM-based neural network for supervised learning and unsupervised learning should proof of all possible complex models. The training data for experiments provided by the MNIST offline handwritten digits which is consist of 0 to 9 multi-pattern.

• Journal of the Korean Society of Systems Engineering
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• v.14 no.1
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• pp.44-51
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• 2018

The purpose of RAM analysis in weapon systems is to reduce life cycle costs, along with improving combat readiness by meeting RAM target value. We analyzed the sensitivity of the RAM analysis parameters to the use of the operating system by using the Markov Process based model (MPS, Markov Process Simulation) developed for RAM analysis. A Markov process-based RAM analysis model was developed to analyze the sensitivity of parameters (MTBF, MTTR and ALDT) to the utility of the 81mm mortar. The time required for the application to reach the steady state is about 15,000H, which is about 2 years, and the sensitivity of the parameter is highest for ALDT. In order to improve combat readiness, there is a need for continuous improvement in ALDT.

• International Journal of Contents
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• v.5 no.4
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• pp.75-80
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• 2009

Recently high-speed memory array based on RAM, which is a type of solid-state drive (SSD), has been introduced to handle the input/output (I/O) bottleneck. But there are only a few performance studies on RAM based SSD storage with regard to diverse workloads. In this paper, we focus on the file system for RAM based memory array based NGS (Next Generation Storage) system which is running on Linux operating system. Then we perform benchmark tests on practical file systems including Ext3, ReiserFS, XFS. The result shows XFS significantly outperforms other file systems in tests that represent the storage and data requests typically made by enterprise applications in many aspects. The experiment is used to design the dedicated file system for NGS system. The results presented here can help enterprises improve their performance significantly.

• Journal of the Korea Institute of Military Science and Technology
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• v.21 no.5
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• pp.714-721
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• 2018

This study proposes a risk evaluation method based on RAM and AHP data in order to prevent subjectivity of risk assessment. The risk assessment consist of Risk Likelihood(RL) and Risk Consequence(RC) in five levels. However, risk analysis of warships is hard to make a judgment because of small quantity production(Ship), long building period, equipment changes, complexity, various kinds of equipments, etc. The proposed RAM data and AHP analysis method are used to quantify each level quantitatively. RAM(MTBF) date is used to classify the RL, and AHP analysis is used to classify the RC. These scientific and data-based method will increase objectivity as well as efficiency of risk evaluation.

• International Journal of Reliability and Applications
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• v.2 no.4
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• pp.269-280
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• 2001

The objective of this paper is to provide a model for effective implementation of costing RAM management in the design and procurement of production facility considering the system cost-performance trade-off. This research proposes a two-step approach of costing RAM design and test of system RAM for production facility. In Step 1, a static model is proposed to find an initial system configuration to meet the required performance based on system RAM and LCC and analyzes the trade-off relationships between various factors of RAM and LCC. In the second Step, we developed time and failure truncated models for system reliability test and analysis. For the computational purpose, we developed computer programs and have shown the sample results. By the sample test run, the proposed model has shown the possibilities to provide a good method to analyze system performance evaluation for both design and operational phase, This model can be applied to a wide variety of systems not only for costing RAM of the production facilities but also for the other kinds of equipment.

• Proceedings of the KSR Conference
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• 2007.11a
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• pp.191-196
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• 2007

This paper is reviewed RAM(Reliability, Availability and Maintainability) data table utilized for RAM data management to Urban Maglev Transit. As railway systems become more complex, the RAM requirements are reinforced to ensure that a design meets Reliability, Availability, Maintainability criteria. Therefore, it needs the efficient management for RAM data of railway system to meet RAM target. At this study, RAM data management format is suggested to ensure reliability and maintainability based on acquired experience for overseas rolling stock. This RAM data table and FMECA(Failure Mode Effect Criticality Analysis) table are useful to the calculation of MTBF(Mean Time Between Failure), MTBSF(Mean Time Between Service Failure) and Maintainability. Also, this RAM management table will be efficient to improve the RAM evaluation to Urban Maglev Transit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.135-140
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• 2016

In this study, we developed the solution-processed PMMA-$HfO_x$ hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-$HfO_x$ hybrid ReRAM were compared to those of PMMA- and $HfO_x$-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-$HfO_x$ hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and $HfO_x$-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the $HfO_x$ into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-$HfO_x$ hybrid ReRAM and $HfO_x$-based ReRAM revealed the Pool-Frenkel conduction. As a result of flexibility test, serious defects were generated in $HfO_x$ film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-$HfO_x$ films showed an excellent flexibility without defect generation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.3
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• pp.141-157
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• 2001

Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.1
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• pp.67-76
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• 2010

RAM(Reliability, Availability, Maintainability) characteristics of weapon system is a part of Required Operational Capability, must be reasonable and achievable. In this study, we studied the criteria, important factors to establish RAM requirement and reviewed the current process. Then we propose the new process and method to establish the reasonable and achievable RAM requirement by BCS(Baseline Comparison System) model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1014-1017
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• 2009

In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.