• 센서학회지
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• 제9권5호
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• pp.357-364
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• 2000

R.F. magnetron sputtering에 의해 $Al_2O_3$ 기판상에 $LaFeO_3$ 박막을 증착하고 막의 구조적, 전기적 및 가스감도 특성을 조사하였다. $600^{\circ}C$ 이상에서 열처리 된 박막에서 (121) 방향의 주결정상을 확인할 수 있었고 가스감지특성에서 박막은 p형 반도체의 특성을 보였다. 박막의 두께 및 열처리 온도의 변화에 대하여, 감도는 박막의 두께변화에는 둔감하였지만 열처리온도에는 큰 변화를 보였다. $800^{\circ}C$에서 열처리된 두께 400 nm의 박막에서 동작온도가 $300^{\circ}C$일때 5000 ppm의 CO 가스에 대해서는 약 400%, 350 ppm의 $NH_3$ 가스에서는 약 60%의 감도를 보였다.

• 한국자기학회지
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• 제8권5호
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• pp.300-307
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• 1998

Co90Fe10 단일박막층은 고진공 RF magnetron sputtering 장비를 이용하여 여러 가지 기판(glass, Si, polyimide) 위에 적층되었고 ~1000$\AA$ 두께를 가진 Co90Fe10 박막은 우수한 고주파 자기특성을 나타내었다. 10$\times$[100 nm co90Fe10/ 100 nm SiO2] 다층 박막의 자화값은 예측된 값과 거의 일치하였으며 Han값(=124 Oe)도 예측된 30$\leq$Han$\leq$125 Oe 범위 내에 있음을 알 수 있었다. 자성 다층 박막의 자화율(=$\mu$,=$\mu$,-j$\mu$r")의 주파수 특성은 자성 다층 박막과 도체로 이루어진 층상구조를 갖는 microstrip line을 network analyzer에 연결하여 전송 특성(S11, S21 파라미터)을 측정함으로써 얻어졌다. $\mu$,"의 주파수 특성은 S-파라미터로 분석되는 magnetic absorption으로부터 얻어졌다. 또한 $\mu$r'의 주파수 특성은 Kramers-Kronig 관계식을 사용하여 $\mu$r"의 주파수 특성으로부터 계산되었다. 이와 같이 얻어진$\mu$r의 주파수 특성 (static 자화율, 공진 주파수)은 계산에 의해서 얻어진 값들과 잘 일치된다는 것을 확인하였다.일치된다는 것을 확인하였다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.194.2-194
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• 2003

• 한국재료학회지
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• 제9권12호
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• pp.1245-1251
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• 1999

상변화형 광디스크는 직접 반복기록에 의한 고속기록, 고밀도화가 가능하고 높은 전송속도, 재생신호의 C/N (carrier to noise) 비가 좋은 장점을 가지고 있으나 반복되는 열에너지에 의한 디스크의 변형과 소거도의 저하, 기록 반복성의 저하가 문제가 된다. 이러한 반복성의 저하를 개선하기 위해 적절한 디스크의 구조와 기록막의 상하부에 유전체 보호막인 ZnS-$SiO_2$ 박막층을 삽입하였다. 박막 제조시 많은 실험변수의 제어를 위해 다꾸찌 방법을 통하여 타겟 R.F. Power 200W, 기판 R.F. Power 20W, 아르곤 압력 4mTorr, 전극거리 6cm의 최적조건을 얻을수 있었다. TEM과 XRD분석 결과, 전극거리가 가까워질수록 높은 증착속도로 인하여 미세한 조직구조를 가지고 있으며, 일정거리 이상 가까워지면 막의 morphology에 나쁜 영향을 끼침을 알 수 있었다. 이러한 막의 morphology의 영향으로 투과율이 감소하는 것을 확인할 수 있었다. AFM과 SEM분석에서는 전극거리가 가까워질수록 높은 증착속도로 인하여 morphology에 나쁜 영향을 끼치고 있음을 확인할 수 있었다. 최적조건에서 증착한 박막은 우수한 morphology를 가진 초미세구조의 치밀하고 결함이 없는 박막이었다. 이 박막은 상변화형 광디스크에서 열적 변형을 억제하고, 열전도를 감소시켜 우수한 유전체 보호피막의 역할을 할 수 있다. 그리고, 전극거리가 ZnS결정립의 크기와 증착속도, morphology에 미치는 영향에 대해 고찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.920-923
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• 2000

All solid-state thin film supercapacitor(TFSC) based on $RuO_2$ electrode was fabricated. Ruthenium oxide$(RuO_2)$ thin film was deposited on Pt/Ti/Si subsrate by d.c. magnetron sputtering. LiPON(lithium phosphorus oxynitride) thin film were deposited by r.f. reactive sputtering. X-ray diffraction patterns of $RuO_2$ and LiPON films revealed that crystal structures of both films were amorphous. To decrease resistivity of $RuO_2$ thin film, $RuO_2$ thin film was deposited with $H_2O$ vapor. In order to decide the maximum ionic conductivity, the LiPON films were prepared by various sputtering condition. The maximum ionic conductivity was $9.5\times{10}^7S/cm$. A charge-discharge measurements showed the capacity of $3\times{10-2}\;F/cm^2-\mu{m}$ for the as-fabricated TFSC. The discharging efficiency was decreased after 500 cycles by 40 %.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.435-438
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• 2001

Thin films of vanadium oxide(VO$\sub$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\sub$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition and bonding properties of films sputter-deposited under different oxygen gas pressures are characterized through XRO, XPS, RBS and FTIR measurements. All the films prepared below 8% O$_2$ are amorphous, and those prepared without oxygen are gray indicating the presence of V$_2$O$\sub$$_4$/ phase in the films. V$_2$O$\sub$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\sub$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms. located on the V-O plane of V$_2$O$\sub$5/ layer participate more readily in the oxidation process.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1003-1010
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• 2000

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.783-786
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• 2003

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from $V_2O_5$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure and optical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD and optical absorption measurements. The films as-deposited are amorphous, but $0%O_2$ films annealed for time longer than 4h and $8%O_2$ films annealed for time longer than 1h are polycrystalline. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly at wavelength shorter than about 550nm. Indirect and direct optical band gaps were decreased with increasing the annealing time.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1411-1413
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD (Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn wt 10%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature $150^{\circ}C$ and 8% $O_2$ partial pressure showed about $3.6{\Omega}/{\square}$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.