• Journal of Microbiology and Biotechnology
• /
• v.28 no.9
• /
• pp.1547-1553
• /
• 2018

Hyaluronidases are a family of enzymes that catalyse the breakdown of hyaluronic acid, which is abundant in the extracellular matrix and cumulus oocyte complex. To investigate the activity of recombinant bovine sperm hyaluronidase 1 (SPAM1) and determine the effect of the Asn-X-Ser/Thr motif on its activity, the bovine SPAM1 open reading frame was cloned into the mammalian expression vector pCXN2 and then transfected to the HEK293 cell line. Expression of recombinant bovine hyaluronidase was estimated using a hyaluronidase activity assay with gel electrophoresis. Recombinant hyaluronidase could resolve highly polymeric hyaluronic acid and also caused dispersal of the cumulus cell layer. Comparative analysis with respect to enzyme activity was carried out for the glycosylated and deglycosylated bovine sperm hyaluronidase by N-glycosidase F treatment. Finally, mutagenesis analysis revealed that among the five potential N-linked glycosylation sites, only three contributed to significant inhibition of hyaluronic activity. Recombinant bovine SPAM1 has hyaluronan degradation and cumulus oocyte complex dispersion ability, and the N-linked oligosaccharides are important for enzyme activity, providing a foundation for the commercialization of hyaluronidase.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.5
• /
• pp.213-217
• /
• 2013

The GaN layer was typical III-V nitride semiconductor and was grown on the sapphire substrate which cheap and convenient. However, sapphire substrate is non-conductivity, low thermal conductivity and has large lattice mismatch with the GaN layer. In this paper, the poly GaN epilayer was grown by HVPE on the metallic compound graphite substrate with good heat dissipation, high thermal and electrical conductivity. We tried to observe the growth mechanism of the GaN epilayer grown on the amorphous metallic compound graphite substrate. The HCl and $NH_3$ gas were flowed to grow the GaN epilayer. The temperature of source zone and growth zone in the HVPE system was set at $850^{\circ}C$ and $1090^{\circ}C$, respectively. The GaN epilayer grown on the metallic compound graphite substrate was observed by SEM, EDS, XRD measurement.

• Journal of the Microelectronics and Packaging Society
• /
• v.22 no.2
• /
• pp.47-53
• /
• 2015

The effects of electroless nickel immersion gold (ENIG) and organic solderability preservative (OSP) surface finishes on the in-situ intermetallics reaction and the electromigration (EM) reliability of Sn-3.0Ag-0.5Cu (SAC305) solder bump were systematically investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of the ENIG surface finish at solder top side, while at the OSP surface finish at solder bottom side,$ Cu_6Sn_5$ and $Cu_3Sn$ IMCs were formed. Mean time to failure on SAC305 solder bump at $130^{\circ}C$ with a current density of $5.0{\times}10^3A/cm^2$ was 78.7 hrs. EM open failure was observed at bottom OSP surface finish by fast consumption of Cu atoms when electrons flow from bottom Cu substrate to solder. In-situ scanning electron microscope analysis showed that IMC growth rate of ENIG surface finish was much lower than that of the OSP surface finish. Therefore, EM reliability of ENIG surface finish was higher than that of OSP surface finish due to its superior barrier stability to IMC reaction.

• Maxillofacial Plastic and Reconstructive Surgery
• /
• v.35 no.1
• /
• pp.38-50
• /
• 2013

Purpose: The aim of this study is to evaluate the effect and potential of electron beam (E-beam) irradiation treatment to the synthetic bony mixtures composed of hydroxyapatite (HA; Bongros$^{(R)}$, Bio@ Co., Korea) and tricalcium phosphate (${\beta}$-TCP, Sigma-Aldrich Co., USA), mixed at various ratios and of type I collagen (Rat tail, BD Biosciences Co., Sweden) as an organic matrix. Methods: We used 1.0~2.0 MeV linear accelerator and 2.0 MeV superconductive linear accelerator (power 100 KW, pressure 115 kPa, temperature $-30{\sim}120^{\circ}C$, sensor sensitivity 0.1~1.2 mV/kPa, generating power sensitivity 44.75 mV/kPa, supply voltage $5{\pm}0.25$ V) with different irradiation dose, such as 1, 30 and 60 kGy. Structural changes in this synthetic bone material were studied in vitro, by scanning electron microscopy (SEM), elementary analysis and field emission scanning electron microscope (FE-SEM), attenuated total reflection (ATR), and electron spectroscopy for chemical analysis (ESCA). Results: The large particular size of HA was changed after E-beam irradiation, to which small particle of TCP was engaged with organic collagen components in SEM findings. Conclusion: The important new in vitro data to be applicable as the substitutes of artificial bone materials in dental and medical fields will be able to be summarized.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.22 no.1
• /
• pp.11-14
• /
• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.2
• /
• pp.57-62
• /
• 2018

In this study, we investigated the impurity effect of $Ga_2O_3$ doped thin film by simple doping method using Mg acetate solution. Both undoped $Ga_2O_3$ thin films and Mg-doped $Ga_2O_3$ thin films were grown on Si substrates at 600 and $900^{\circ}C$ for 30 minutes by means of a customized MOCVD method. As a result of the surface analysis, there were no obvious morphological differences by Mg impurity implantation. The surface of the thin film grown at $900^{\circ}C$ was rougher than those grown at $600^{\circ}C$ and polycrystallization was achieved. As a result of the optical property analysis, in the case of the doped sample, the overall emission peak was red shifted and the UV radiation intensity was increased. As a result of the I-V curve, the leakage current of the $600^{\circ}C$ growth thin film decreased by the Mg impurity and the photocurrent of the growth thin film of $900^{\circ}C$ increased.

• Journal of the Korea Concrete Institute
• /
• v.25 no.1
• /
• pp.99-106
• /
• 2013

Concrete materials subjected to impact by high velocity projectiles exhibit responses that differ from those when they are under static loading. Projectiles generate localized effects characterized by penetration of front, spalling of rear and perforation as well as more widespread crack propagation. The magnitude of damage depends on a variety of factors such as material properties of the projectile, impact velocity, the mass and geometry as well as the material properties of concrete specimen size and thickness, reinforcement materials type and method of the concrete target. In this study, penetration depth of front, spalling thickness of rear and effect of spalling suppression of concrete by fiber reinforcement was evaluated according to compressive strength of concrete. As a result, it was similar to results of the modified NDRC formula and US ACE formula that the more compressive strength is increased, the penetration depth of front is suppressed. On the other hand, the increase in compressive strength of concrete does not affect spalling of rear suppression. Spalling of rear is controlled by the increase of flexural, tensile strength and deformation capacity.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.38 no.5
• /
• pp.389-397
• /
• 2014

An absorption chiller-heater using only a natural refrigerant hardly causes any environmental pollution. In an absorption chiller-heater, the performance of its high-temperature generator, which uses exhaust gases, is essential to achieving superior system performance. To investigate the performance of such a high-temperature generator, a laboratory-scale high-temperature generator working with exhaust gases was designed and tested. Changes in the performance of the high-temperature generator as a function of inlet conditions of the absorbing solution, such as air inlet temperature and mass flow, were investigated. It was observed that when the air mass flow rate ratio was increased from 80% to 120%, the heat capacity was increased by 30%, 33%, 34%, and 37%, respectively. Additionally, when the air inlet temperature was elevated from $170^{\circ}C$ to $210^{\circ}C$ for absorption solution concentrations of 56%, 55%, 545, and 53%, the heat capacity increased by 140%, 160%, 220%, and 224%, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.2
• /
• pp.62-67
• /
• 2015

The carbon microspheres of a core-shell type were grown by the method of mixed-source hydride vapor phase epitaxy (HVPE). The surface and the cross section of the carbon microsphere grown by a new method were observed by scanning electron microscope (SEM). The characteristics of the carbon microsphere were investigated by X-ray photoelectron spectroscopy (XPS) and a high resolution-transmission electron microscope (HR-TEM). From these measurements, the diameters of carbon sphere were about few hundred micrometers. Furthermore, we show that the carbon microsphere of the core-shell type by mixed-source HVPE method can be grown successfully with the larger size than those of the existing one. This mixed-source HVPE method is proposed a new method for making of carbon microsphere.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.2
• /
• pp.45-50
• /
• 2015

Compositionally graded AlGaN epilayer was grown by HVPE (hydride vapor phase epitaxy) on (0001) c-plane sapphire substrate. During the growth of graded AlGaN epilayer, the temperatures of source and the growth zone were set at $950^{\circ}C$ and $1145^{\circ}C$, respectively. The growth rate of graded AlGaN epilayer was about 100 nm/hour. The changing of Al contentes was investigated by field emission scanning electron microscope (FE-SEM) and energy dispersive spectroscopy (EDS). From the result of atomic force microscope (AFM), the average of roughness in 2 inch substrate of graded AlGaN epilayer was a few nanometers scale. X-ray diffraction (XRD) with the result that the AlGaN (002) peak ($Al_{0.74}Ga_{0.26}N$) and AlN (002) peak were appeared. It seems that the graded AlGaN epilayer was successfully grown by the HVPE method. From these results, we expect to use of the graded AlGaN epilayer grown by HVPE for the application of electron and optical devices.