• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2004년도 ICCAS
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• pp.1659-1661
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• 2004

Measurement of supersaturation is important in crystallization processes, because it is one of key factors to control crystal size distribution and shape determining product quality. A monitoring system of the supersaturation using a quartz crystal sensor is applied to the supersaturation measurement. From the variation of resonant frequency, the beginning of the formation of salt crystal on the sensor surface is detected while the sensor is directly cooled down. The degree of supersaturation is computed from the solubility difference at the temperatures of the salt solution and the sensor. The performance of the propsed system of the supersaturation measurement is examined by applying the system to the crystallization of three different salt solutions. The experimental outcome compared with eye observation result and photographic analysis indicates that the proposed system is effective and useful to determine the supersaturation in the crystallization process. In addition, the microscopic monitoring of the initial stage crystallization is available with the sensor system.

• 한국결정성장학회지
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• 제13권1호
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• pp.41-45
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• 2003

FT-IR은 보석을 감별하고 연구하는데 있어서 아주 유용한 장비이다. 그러므로 본 연구에서는 FT-IR을 이용하여 자수정. 황수정, 백수정 그리고 비취를 감별하는 데에 중점을 두었다 FT-IR은 자수정, 황수정과 백수정의 천연과 합성의 진위를 가리는데 매우 효과적이었으며, 천연 비취(A-Jade)와 왁스가 주입된 비취, 폴리머가 주입된 비취(B-Jade)를 식별하는 데 매우 유용하였다. 이러한 기술은 처리와 합성에 의해 새롭게 변화되어 나타나는 보석의 감별에 있어, 결정적으로 도움이 될 것이다.

• 한국재료학회지
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• 제4권6호
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• pp.611-619
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• 1994

본 연구는 Lithium Alumino Silicate 기본계에 핵형성제로 $TiO_{2}$와 $ZrO_{2}$를 사용하여 기본유리를 제조하고 열처리에 따른 $\beta$-quartz고용체의 미결정 형성과정을 분석하였다. 또한 $\beta$-quartz고용체의 형성에 따른 열적 특성과 광학적 특성을 비교하였다. 그 결과, 기본 유리의 열팽창 계수는 $45\sim 55 \times 10^{-7} \textrm{cm}/^{\circ}C$였으며, 결정화 시편의 열팽창 계수는$ -8\sim +8 \times 10^{-7}\textrm{cm}/^{\circ}C$ ($25^{\circ}C \sim 525^{\circ}C$)였다. $900^{\circ}C$이하에서 열처리된 Glass Cermics의 결정은 $\beta$-quartz 고용체가 형성되었고, 결정의 크기가 0.21$\mu \textrm{m}$를 초과하지 않았으며, 최고의 투광도는 80%이상을 나타냈다. RO성분을 MgO와 ZnO를 사용한 경우보다 MgO 단독으로 사용한 시편을 결정입자의 크기가 온도에 의존하지 않고 일정함을 나타냈으며, ZnO의경우는 입자의 크기가 최소값(0.18$\mu \textrm{m}$)을 보이며 온도의존성이 크게 나타냈다.

• 한국결정성장학회지
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• 제9권6호
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• pp.542-546
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• 1999

InP single crystal, III-V binary compound semiconductor, was grown by VGF(vertical gradient freeze) method using quartz ampoule and its electrical optical properties were investigated. Phosphorous powders were put in the bottom of quartz ampoule and Indium metal charged in conical quartz crucible what was attached at the upper side position inside the quartz ampoule. It was vacuous under the pressure of $10^5$Torr and sealed up. Indium metal was melted at $1070^{\circ}C$ and InP composition was formed by diffusion of phosphorous sublimated at $450^{\circ}C$ into Indium melt. By cooling the InP composition melt ($2^{\circ}C$~$5^{\circ}C$/hr of cooling rate) in range of $1070^{\circ}C$~$900^{\circ}C$, InP crystal was grown. The grown InP single crystals were investigated by X-ray analysis and polarized optical microscopy. Electrical properties were measured by Van der Pauw method. At the cooling method. At the cooling rate of $2^{\circ}C$/hr, growth direction of ingot was [111] and the quality of ingot was better at the upper side of ingot than the lower side. It was found that the InP crystals were n-type semiconductor and the carrier concentration, electron mobility and relative resistivity were $10^{15}$~$10^{16}/\textrm{cm}^3$ , $2\times 10^3$~$3\times 10^4{\textrm}{cm}^2$/Vsec and$2\times 10^{-1}$~$2\times 10^{-3}$/ Wcm in the range of 150K~300K, respectively.

• 대한전기학회논문지
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• 제36권10호
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• pp.719-723
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• 1987

This paper shows the design method and the experimental results of the thin film thickeness monitor. The thin film thickness monitor uses 6 MHz quartz crystal in sensor and cooling system for the fine operation. The thin film thickness are measured by the digital frequrency counter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.543-546
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• 2001

So far, the design methods of quartz crystal resonator have been developed. Recently, as the electronic package and semiconductor modules become smaller, the need to minimize the sizes of crystal components grows larger. but Minimizing crystal plate sizes has limitations because its temperature-frequency characteristics is worse and unwanted resonances occur. so appropriate design of electrode size and crystal plates is necessary. In this palter, Two-dimensional governing equations for electroded piezoelectric crystal plates with general symmetry have been solved from deduced equations from three-dimensional equations of linear piezoelectricity in most cases. In practice, electroded piezoelectric crystal plates have three-dimensional geometry, so simplified 2-dimensional equations and 2-D modeling are insufficient for explaining its resonance modes and characteristics. So, three-dimensional FEM(finite element method) analysis is done and its effectiveness is verified from analyzing practical crystal resonator model.

• 한국결정성장학회지
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• 제5권2호
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• pp.175-180
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• 1995

석탄회의 성상 해명의 일환으로서, 석회석의 열처리 조건과 광물조성의 관계를 검토했다. 석탄회의 주 광물조성은 mullite, quartz 및 유리상(약 20 ~ 25wt%)이었으며, $1000^{\circ}C $ 까지는 거의 변화가 없었다. 안산의 석탄회 중에는 calcite가 함유되었으며, $1200^{\circ}C $ 에서 calcite 분해로부터 온 CaO, quartz 및 유리상 중의$Al_2O_3$가 반응하여 anorthite($CaO{\cdot}Al_2O_3{\cdot}2SiO_2$)로 바뀌는 것을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1232_1233
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• 2009

Paraquat is well-known to cause hepatotoxic responses in human and other mammal species. In solution, it forms free radicals and charge-transfer complex of which formation plays an important role in determination of its biological activity in the presence of various anions. The HepG2 cells were cultured onto a quartz crystal sensor which is possible to detect the density and a viscosity changes using the resonance frequency (F) and the resonance resistance (R). The plot of F-R diagram is able to explain the rheological change of cells onto the surface of the quartz crystal sensor. In this paper, we investigated the physical properties of the HepG2 cells cultured onto a ITO electrode of the quartz crystal sensor according to the paraquat injection at various concentrations (100 mM, 10 mM, 1 mM). We also observed the morphological changes with a micro CCD camera, simultaneously. The HepG2 cells were cultured onto the ITO electrode surface of the quartz crystal modified a collagen film in $CO_2$ incubator. After the paraquat injection, we observed the changes of the morphologies by the micro CCD camera depending on time and analyzed the physical changes of cells on the electrode surface of quartz crystal using F-R diagram. From all results, we proved the effect of paraquat at various concentrations which is led to an apoptosis such as weakening and death of the cells by oxidation and reduction reaction that were produced the superoxide anions and other free radicals.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.419-431
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• 1999

InP, III-V binary compound semiconductor, single crystal was grown by VGF (vertical gradient freeze) method using quartz ampoule and its electrical optical properties were investigated. Phosphorous powders were put in the bottom of quartz ampoule and Indium metal changed in conical quartz crucible hat was attached at the upper side position inside the quartz ampoule. It was vacuous under the pressure of 10-5 Torr and sealed up. In metal in the quartz crucible was melted at 1070$^{\circ}C$ and phophorous sublimated at 450$^{\circ}C$, there after it was diffused in In melt and so InP composition was formed. By cooling the InP composition melt (2$^{\circ}C$∼5$^{\circ}C$/hr of cooling rate) in range of 1070$^{\circ}C$∼900$^{\circ}C$, InP crystal was grown. the grown InP single crystals were investigated by X-ray analysis and polarized optical microscopy. Electrical properties of them were measured by Van der Pauw method. At the cooling rate of 2$^{\circ}C$/hr, its direction was (111), quality of the ingot ws better upper side of the ingot than lower. It was found that the InP crystals were n-type semiconductor and the carrier concentration, electron mobility and relative resistivity were 1015∼1016/㎤, 2x103∼3x104$\textrm{cm}^2$/Vsec and 2x10-1∼2x10-3Ωcm in the range of 150K∼300K, respectively.

• Bulletin of the Korean Chemical Society
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• 제17권1호
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• pp.39-42
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• 1996

A new oscillator for electrochemical quartz crystal microbalance (EQCM) was developed by using an operational amplifier without any LC component. The home-made EQCM using this oscillator showed only 0.02 Hz frequency noise at 0.3 s gate time when a 6 MHz AT-cut crystal was used. Pb underpotential deposition on gold substrate in nitric acid media was examined to demonstrate the performance of this EQCM. The derivative of frequency change could be obtained without averaging multiple scans.