• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.7 no.10
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• pp.895-903
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• 2017

Quantum Cellular Automata(QCA) is one of the proposed techniques as an alternative solution to the fundamental limitations of CMOS. QCA has recently been extensively studied along with experimental results, and is attracting attention as a nano-scale size and low power consumption. Although the XOR gates proposed in the previous paper can be designed using the minimum area and the number of cells, there is a disadvantage that the number of added cells is increased due to the stability and the accuracy of the result. In this paper, we propose a gate that supplement for the drawbacks of existing XOR gates. The XOR gate of this paper reduces the number of cells by arranging AND gate and OR gate with square structure and propose a half-adder by adding two cells that serve as simple inverters using the proposed XOR gate. Also This paper use QCADesginer for input and result accuracy. Therefore, the proposed half-adder is composed of fewer cells and total area compared to the conventional half-adder, which is effective when used in a large circuit or when a half - adder is needed in a small area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1069-1074
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• 2005

In this work, nano-needle structures ate formed to solve problem, related to low density of quantum dots for nano floating gate memory. Such structures ate fabricated and electrical properties' of MIS devices fabricated on the nano-structures are studied. Nano floating gate memory based on quantum dot technologies Is a promising candidate for future non-volatile memory devices. Nano-structure is fabricated by reactive ion etching using $SF_6$ and $O_2$ gases in parallel RF plasma reactor. Surface morphology was investigated after etching using scanning electron microscopy Uniform and packed deep nano-needle structure is established under optimized condition. Photoluminescence and capacitance-voltage characteristics were measured in $Al/SiO_2/Si$ with nano-needle structure of silicon. we have demonstrated that the nano-needle structure can be applicable to non-volatile memory device with increased charge storage capacity over planar structures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.21-26
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• 2008

We fabricated nano-particles of ZnO, $In_2O_3$ and $SnO_2$ by using the chemical reaction between metal thin films and polyamic acid. The average size and density of these ZnO, $In_2O_3$ and $SnO_2$ nano-particles was approximately 10, 7, and 15 nm, and $2{\times}10^{11},\;6{\times}10^{11},\;2.4{\times}10^{11}cm^{-2}$, respectively. Then, we fabricated nano-floating gate memory (NFGM) devices with ZnO and $In_2O_3$ nano-particles embedded in the devices' polyimide dielectrics and silicon dioxide layers as control and tunnel oxides, respectively. We measured the current-voltage characteristics, endurance properties and retention times of the memory devices using a semiconductor parameter analyzer. In the $In_2O_3$ NFGM, the threshold voltage shift (${\Delta}V_T$) was approximately 5 V at the initial state of programming and erasing operations. However, the memory window rapidly decreased after 1000 s from 5 to 1.5 V. The ${\Delta}V_T$ of the NFGM containing ZnO was approximately 2 V at the initial state, but the memory window decreased after 1000 s from 2 to 0.4 V. These results mean that metal-oxide nano-particles have feasibility to apply NFGM devices.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.1
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• pp.29-36
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• 2016

Recently a new class of quantum gate called $NCV-{\mid}v_1$ > library with low cost realizable potentialities is being watched with keen interest. The $NCV-{\mid}v_1$ > MCT gate is composed of AND cascaded-$CV-{\mid}v_1$ > gates to control the target qudit and its adjoint gates to erase junk ones. This paper presents a new symmetrical duality library named $NCV^{\dag}-{\mid}v_1$ > library corresponding to $NCV-{\mid}v_1$ > library. The new $NCV^{\dag}-{\mid}v_1$ > library can be operated on OR logic under certain conditions. By using both the $NCV-{\mid}v_1$ > and $NCV^{\dag}-{\mid}v_1$ > libraries it is possible to realize MPMCT gates, SOP and POS type synthesis of quantum logic circuits with extremely low cost, and expect dual gate property caused by different operational attributes with respect to forward and backward operations.

• The Journal of the Convergence on Culture Technology
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• v.7 no.1
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• pp.558-563
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• 2021

Quantum-Dot Cellular Automata is a next-generation nanocircular design technology that is drawing attention from many research organizations not only because it is possible to design efficient circuits by overcoming the physical size limitations of existing CMOS circuits, but also because of its energy-efficient features. In this paper, one of the existing digital circuits, T flip-flop circuit, is proposed using QCA. The previously proposed T flip-flops are designed based on the majority gate, so the circuits are complex and have long delays. Therefore, the design of the XOR gate-based T flip-flop using cell interaction reduces circuit complexity and minimizes latency. The proposed circuit is simulated using QCADesigner, and the performance is compared and analyzed with the existing proposed circuits.

• Advances in nano research
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• v.3 no.1
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• pp.49-54
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• 2015

The structure represents symmetrical metal electrode (gate 1) - front $SiO_2$ layer - n-Si nanowire FET - buried $SiO_2$ layer - metal electrode (gate 2). At the symmetrical gate voltages high conductive regions near the gate 1 - front $SiO_2$ and gate 2 - buried $SiO_2$ interfaces correspondingly, and low conductive region in the central region of the NW are formed. Possibilities of applications of nanosize FETs at the deep inversion and depletion as a distributed capacitance are demonstrated. Capacity density is an order to ${\sim}{\mu}F/cm^2$. The charge density, it distribution and capacity value in the nanowire can be controlled by a small changes in the gate voltages. at the non-symmetrical gate voltages high conductive regions will move to corresponding interfaces and low conductive region will modulate non-symmetrically. In this case source-drain current of the FET will redistributed and change current way. This gives opportunity to investigate surface and bulk transport processes in the nanosize inversion channel.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.2
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• pp.564-582
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• 2015

This paper proposes a novel swarm intelligence optimization method which integrates bacterial foraging optimization (BFO) with quantum computing, called quantum bacterial foraging optimization (QBFO) algorithm. In QBFO, a multi-qubit which can represent a linear superposition of states in search space probabilistically is used to represent a bacterium, so that the quantum bacteria representation has a better characteristic of population diversity. A quantum rotation gate is designed to simulate the chemotactic step for the sake of driving the bacteria toward better solutions. Several tests are conducted based on benchmark functions including multi-peak function to evaluate optimization performance of the proposed algorithm. Numerical results show that the proposed QBFO has more powerful properties in terms of convergence rate, stability and the ability of searching for the global optimal solution than the original BFO and quantum genetic algorithm. Furthermore, we examine the employment of our proposed QBFO for cognitive radio spectrum allocation. The results indicate that the proposed QBFO based spectrum allocation scheme achieves high efficiency of spectrum usage and improves the transmission performance of secondary users, as compared to color sensitive graph coloring algorithm and quantum genetic algorithm.

• Journal of the Korea institute for structural maintenance and inspection
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• v.18 no.4
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• pp.1-9
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• 2014

With the development of quantum computer, the development of the quantum-inspired search method applying the features of quantum mechanics and its application to engineering problems have emerged as one of the most interesting research topics. This algorithm stores information by using quantum-bit superposed basically by zero and one and approaches optional values through the quantum-gate operation. In this process, it can easily keep the balance between the two features of exploration and exploitation, and continually accumulates evolutionary information. This makes it differentiated from the existing search methods and estimated as a new algorithm as well. Thus, this study is to suggest a new minimum weight design technique by applying quantum-inspired search method into structural optimization of planar truss. In its mathematical model for optimum design, cost function is minimum weight and constraint function consists of the displacement and stress. To trace the accumulative process and gathering process of evolutionary information, the examples of 10-bar planar truss and 17-bar planar truss are chosen as the numerical examples, and their results are analyzed. The result of the structural optimized design in the numerical examples shows it has better result in minimum weight design, compared to those of the other existing search methods. It is also observed that more accurate optional values can be acquired as the result by accumulating evolutionary information. Besides, terminal condition is easily caught by representing Quantum-bit in probability.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.130-133
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• 2010

This paper presents a study of the influence of variation of counter doping thickness on short channel effect in symmetric double-gate (DG) nano MOSFETs. Short channel effects are estimated from the computed values of current-voltage (I-V) characteristics. Two dimensional Quantum transport equations and Poisson equations are used to compute DG MOSFET characteristics. We found that the transconductance ($g_m$) and the drain conductance ($g_d$) increase with an increase in p-type counter-doping thickness ($T_c$). Very high value of transconductance ($g_m=38\;mS/{\mu}m$) is observed at 2.2 nm channel thickness. We have established that the threshold voltage of DG MOSFETs can be tuned by selecting the thickness of counter-doping in such device.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.1
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• pp.31-40
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• 2022

This paper proposes an augmented QSBC(Quantum Short-Block Code) that preserves the function of the existing QSBC and adds a single bit-flip error correction function due to Pauli X and Y errors. The augmented QSBC provides the diagnosis and automatic correction of a single Pauli X error by inserting additional auxiliary qubits and Toffoli gates as many as the number of information words into the existing QSBC. In this paper, the general expansion method of the augmented QSBC using seed vector and the realization method of the Toffoli gate of the single bit-flip error automatic correction function reflecting the scalability are also presented. The augmented QSBC proposed in this paper has a trade-off with a coding rate of at least 1/3 and at most 1/2 due to the insertion of auxiliary qubits.