• Proceeding of EDISON Challenge
• /
• 2016.03a
• /
• pp.368-372
• /
• 2016

In this paper, the physics-based analytical model of transition metal dichalcogenide (TMD)-based double-gate (DG) tunneling field-effect transistors (TFETs) is proposed. The proposed model is derived by using the two-dimensional (2-D) Landauer formula and the Wentzel-Kramers-Brillouin (WKB) approximation. For improving the accuracy, nonlinear and continuous lateral energy band profile is applied to the model. 2-D density of states (DOS) and two-band effective Hamiltonian for TMD materials are also used in order to consider the 2-D nature of TMD-based TFETs. The model is validated by using the tight-binding non-equilibrium Green's function (NEGF)-based quantum transport simulation in the case of monolayer molybdenum disulfide ($MoS_2$)-based TFETs.

• Advances in nano research
• /
• v.15 no.6
• /
• pp.521-531
• /
• 2023

Quantum-dot cellular automata (QCA) has shown great potential in the nanoscale regime as a replacement for CMOS technology. This work presents a specific approach to static random-access memory (SRAM) cell based on 2:1 multiplexer, 4-bit SRAM array, and 32-bit SRAM array in QCA. By utilizing the proposed SRAM array, a single-layer 16×32-bit SRAM with the read/write capability is presented using an optimized signal distribution network (SDN) crossover technique. In the present study, an extremely-optimized 2:1 multiplexer is proposed, which is used to implement an extremely-optimized SRAM cell. The results of simulation show the superiority of the proposed 2:1 multiplexer and SRAM cell. This study also provides a more efficient and accurate method for calculating QCA costs. The proposed extremely-optimized SRAM cell and SRAM arrays are advantageous in terms of complexity, delay, area, and QCA cost parameters in comparison with previous designs in QCA, CMOS, and FinFET technologies. Moreover, compared to previous designs in QCA and FinFET technologies, the proposed structure saves total energy consisting of overall energy consumption, switching energy dissipation, and leakage energy dissipation. The energy and structural analyses of the proposed scheme are performed in QCAPro and QCADesigner 2.0.3 tools. According to the simulation results and comparison with previous high-quality studies based on QCA and FinFET design approaches, the proposed SRAM reduces the overall energy consumption by 25%, occupies 33% smaller area, and requires 15% fewer cells. Moreover, the QCA cost is reduced by 35% compared to outstanding designs in the literature.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.5
• /
• pp.615-624
• /
• 2014

In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on the non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. The calculated results show that CNTFETs exhibit superior performance compared with graphene nanoribbon field-effect transistors (GNRFETs), such as better control ability of the gate on the channel, higher drive current with lower subthreshold leakage current, and lower subthreshold-swing (SS). Due to larger band-structure-limited velocity in CNTFETs, ballistic CNTFETs present better high-frequency performance limit than that of Si MOSFETs. The parameter effects of CNTFETs are also investigated. In addition, to enhance the immunity against short - channel effects (SCE), hetero - material - gate CNTFETs (HMG-CNTFETs) have been proposed, and we present a detailed numerical simulation to analyze the performances of scaling down, and conclude that HMG-CNTFETs can meet the ITRS'10 requirements better than CNTs.

• Proceedings of the IEEK Conference
• /
• 2004.08c
• /
• pp.482-485
• /
• 2004

We fabricated a hybrid bulk/fully depleted silicon on insulator (FDSOI) complementary metal oxide semiconductor (CMOS) active pixel image sensor. The active pixel is comprised of reset and source follower transistors on the SOI seed wafer, while the pinned photodiode and readout gate and floating diffusion are fabricated on the SOI handle wafer after the removal of the buried oxide. The source of dark current is eliminated by hybrid bulk/FDSOI pixel structure between localized oxidation of silicon (LOCOS) and photodiode(PD). By using the low noise hybrid pixel structure, dark currents qm be suppressed significantly. The pinned photodiode can also be optimized for quantum efficiency and reduce the noise of dark current. The spectral response of the pinned photodiode on the SOI handle wafer is very flat between 400 nm and 700 nm and the dark current that is higher than desired is about 10 nA/cm2 at a $V_{DD}$ of 2 V.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.79-79
• /
• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.211.1-211.1
• /
• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• Journal of Institute of Control, Robotics and Systems
• /
• v.22 no.8
• /
• pp.671-677
• /
• 2016

A Controller Area Network (CAN) is a serial communication protocol that is highly reliable and efficient in many aspects, such as wiring cost and space, system flexibility, and network maintenance. Therefore, it is chosen for the communication protocol between a single chip controller based on Field Programmable Gate Array (FPGA) and peripheral devices. In this paper, the design and implementation of CAN IP, which is written in VHSIC Hardware Description Language (VHDL), is presented. The implemented CAN IP is based on the CAN 2.0A specification. The CAN IP consists of three processes: clock generator, bit timing, and bit streaming. The clock generator process generates a time quantum clock. The bit timing process does synchronization, receives bits from the Rx port, and transmits bits to the Tx port. The bit streaming process generates a bit stream, which is made from a message received from a micro controller subsystem, receives a bit stream from the bit timing process, and handles errors depending on the state of the CAN node and CAN message fields. The implemented CAN IP is synthesized and downloaded into SmartFusion FPGA. Simulations using ModelSim and chip test results show that the implemented CAN IP conforms to the CAN 2.0A specification.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2001.10a
• /
• pp.665-668
• /
• 2001

As reducing the physical size of devices, we can integrate more devices per the unit chip area and make its speed better. We have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane. We compared and analyzed the characteristics of such device structure, i.e., impact ionization, electric field and I-V characteristics curve with lightly-doped drain(LDD) MOSFET. We simulated MOSFET with gate lengths from 0.10 to 0.06${\mu}{\textrm}{m}$ step 0.01${\mu}{\textrm}{m}$ in according to constant voltage scaling theory.

• Proceedings of the Korea Information Processing Society Conference
• /
• 2018.10a
• /
• pp.5-7
• /
• 2018

VLSI(Very large scale integration) 기술을 통한 트랜지스터의 소형화를 통해 CMOS 집적 회로의 성능은 지속적으로 발전해 왔다. 이와 같은 기술 발전에 따라 집적 회로를 구성하는 디지털 논리 요소 또한 진화를 하고 있다. 디코더는 부호화된 정보를 다시 부호화되기 전으로 되돌아가는 처리를 하는 디지털 논리 요소이며 컴퓨터 설계에서 많이 사용되는 핵심 요소이다. 본 논문에서는 양자점 셀룰라 오토마타(Quantum Cellular-Automata, QCA)를 사용하여 인에이블 입력을 가진 2-to-4 디코더를 제안하였다. 4-입력 유니버설 게이트의 하나의 입력을 1로 고정시켜 3-입력 NOR 게이트로 사용하며, 입력 값 X와 입력 값 Y의 중복된 배선 수를 감소시키고 한 배선으로 두 게이트에 입력을 연결하여 디코더의 배선 수와 배선 교차부를 최소화한다. 제안안하는 4-to-2 인에이블 디코더는 기존 디코더보다 셀의 개수와 클럭수를 감소시켜 디코더의 성능을 더 효율적으로 향상시켰다. 이를 통해 고속 회로 설계에 활용 및 높은 성능을 기대 할 수 있으며 QCA 연구에 기여할 수 있을 것으로 전망 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.6
• /
• pp.466-468
• /
• 2009

The metal-insulator-silicon (MIS) capacitors with $SiO_2$ and high-k dielectrics ($HfO_2$, $Al_2O_3$) were fabricated, and the current-voltage characteristics were investigated. Especially, an effective barrier height between metal gate and dielectric was extracted by using Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot of quantum mechanical(QM) modeling. The calculated barrier heights of thermal $SiO_2$, ALD $SiO_2$, $HfO_2$ and $Al_2O_3$ are 3.35 eV, 0.6 eV, 1.75 eV, and 2.65 eV, respectively. Therefore, the performance of non-volatile memory devices can be improved by using engineered tunnel barrier which is considered effective barrier height of high-k materials.