Tunneling Properties in High-k Insulators with Engineered Tunnel Barrier for Nonvolatile Memory (차세대 비휘발성 메모리에 사용되는 High-k 절연막의 터널링 특성)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.22 no.6
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- pp.466-468
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- 2009