• 한국전기전자재료학회논문지
• /
• 제29권12호
• /
• pp.737-749
• /
• 2016

Recently perovskite materials with much cheaper cost and marvellous optoelectronic properties have been studied for next generation LED display devices overseas. Technology development trends of inorganic $CsPbX_3$(X=halogen) based LEDs (PeLEDs) with assumed high stability were investigated on literature worldwide. It was found that syntheses methods of these nanocrystals (NCs, mainly quantum dots, QDs) made great progress. A new room temperature synthesis method showed outstanding PL (photoluminescence) properties such as high quantum yield (QY), narrow emission width, storage stability comparable with, or often exceeding those of conventional hot injection method and CdSe@ZnS type inorganic colloidal QDs. PeLEDs with shell layers might be more promising, indicating urgent real research start of this solution processing technology for small businesses in Korea.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.330-330
• /
• 2009

For the high-performance Quantum dots-Light Emitting Diodes in the near-infrared and visible spectrum, adequate electro- and hole-transporting layers are required. The operation lifetimes of typical materials used in OLEDs are very limited and degraded especially by the oxygen and humid atmosphere. In this work, NiO was selected as a possible hole-transporting layer replacing the TPD film used in QD-LEDs. About 40-nm-thick NiO films have been deposited by the rf-sputtering method on various technical substrates such as FTO/glass, ITO/glass, and ITO/PEN. For the balance of charge carriers and quenching consideration, the resistivity of the deposited NiO films was investigated controlling the oxygen in the sputtering gas. NiO films were fabricated at room temperature and about 6mTorr using pure Ar, 2.5%-, 5%-, and 10%-mixed $O_2$ in Ar respectively. We also investigated the rf-power dependence on NiO films in the range of 80 ~ 200 Watts. The resistivity of the samples was varied from highly conductive to resistive state. Also discussed are the surface roughness of NiO films to provide the smooth surface for the deposition of QDs.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.246.1-246.1
• /
• 2014

Over the past several years, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED). In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[1] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 8 V, the QDLED device emitted spectrally orange color lights with high luminance up to 2450 cd/m2, and showed current efficacy of 0.6 cd/A, respectively.

• 세라미스트
• /
• 제21권1호
• /
• pp.55-63
• /
• 2018

Recently, display technology has been focused in regard with with color reproduction, contrast ratio, image resolution and color bit. Among these technologies, the color reproducibliity of White, Red, Green, and Blue is associated with the TV plaform and is expressed as a major technology. Major TV platforms are divided into three categories since 2015, including LCD-based phosphor coverted LED BLU technology, QD sheet technology using nano-sized quantum dots, and OLED technology. In this paper, we describe the color reproducibility definition and background, luminescent materials with wide color gamut, color reproducibility of TV display performance, and discuss about next luminescent materials.

• 공업화학전망
• /
• 제23권6호
• /
• pp.14-24
• /
• 2020

최근 우수한 발광 특성을 갖는 양자점을 고해상도 디스플레이의 발광 소재로 도입하고자 하는 노력이 활발하다. 양자점을 활용한 디스플레이의 실현을 위해서는 콜로이드 상태인 다색의 양자점을 고해상도로 패터닝하는 기술의 확립이 필요하다. 본 연구에서는 ethane-1,2-diyl bis(4-azido-2,3,5,6-tetrafluorobenzoate)를 양자점용 가교제로 활용하여 용액공정을 기반으로 형성된 양자점 박막을 고해상도로 패터닝한 기술을 소개하고자 한다. 위 양자점용 가교제의 양 말단에는 아지드 그룹을 포함한 작용기가 존재한다. 아지드 기는 자외선에 의해 광 활성화되어 양자점 표면의 알킬 리간드와 가교 결합을 형성함으로써, 양자점 박막에 화학적 내구성을 부여한다. 본 기술을 기반으로, 적색, 녹색, 청색의 카드뮴 기반 양자점을 고해상도로 패터닝하고 정밀하게 배열하여 인치 당 화소 수 1400 이상의 픽셀 형성에 성공하였다. 또한 가교 반응 후에도 성능 저하가 없는 양자점 박막 및 자발광 양자점 다이오드를 개발하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.189-189
• /
• 2016

Recently, many researchers have shown an increased interest in colloidal quantum dots (QDs) due to their unique physical and optical properties of size control for energy band gap, narrow emission with small full width at half maxima (FWHM), broad spectral photo response from ultraviolet to infrared, and flexible solution processing. QDs can be widely used in the field of optoelectronic and biological applications and, in particular, colloidal QDs based light emitting diodes (QDLEDs) have attracted considerable attention as an emerging technology for next generation displays and solid state lighting. A few methods have been proposed to fabricate white color QDLEDs. However, the fabrication of white color QDLEDs using single QD is very challenging. Recently, hybrid nanocomposites consisting of CdTe/ZnO heterostructures were reported by Zhimin Yuan et al.[1] Here, we demonstrate a novel but facile technique for the synthesis of CdTe/ZnO/G.O(graphene oxide) quasi-core-shell-shell quantum dots that are applied in the white color LED devices. Our best device achieves a maximum luminance of 484.2 cd/m2 and CIE coordinates (0.35, 0.28).

• Korean Chemical Engineering Research
• /
• 제46권6호
• /
• pp.1081-1086
• /
• 2008

양자 점을 이용한 QD-LED(Quantum Dot - Light Emitting Device)의 소자 제작을 하기 위해서는 양자 점의 균일한 배열이 중요하다. 핵-껍질(core-shell) 구조의 CdSe/ZnS 양자 점을 기판에 고 밀도, 고 균일도로 배열하기 위하여 두 종류의 분자 끈(molecular linker)을 사용하였고, 공정의 단순화와 비용 절감을 위하여 고분자 도장인 PDMS(polydimethylsiloxane)를 이용한 미세접촉인쇄방법으로 양자 점들을 배열하였다. $TiO_2/ITO$ 기판에 양자 점을 고정시켜주는 역할을 하는 분자 끈으로는 2-carboxyethylphosphonic acid(CAPO)를 사용하였고, 양자 점 사이의 인력을 향상시켜주는 분자 끈으로는 1,6-hexanedithiol(HDT)을 사용하였다. 양자 점들의 배열 특성을 주사전자현미경(SEM, scanning electron microscope)과 원자 힘 현미경(AFM, atomic force microscope)으로 분석하였고, 광 발광분광기(PL, photoluminescence spectroscope)로 발광특성을 측정하였다.

• 반도체디스플레이기술학회지
• /
• 제19권4호
• /
• pp.6-10
• /
• 2020

The silver nanowires (AgNWs) were synthesized by the conventional polyol process, which revealed 25 ㎛ and 30 nm of average length and diameter, respectively. The synthesized AgNWs were applied to the CdSe/CdZnS quantum dot (QD) based transparent light-emitting device (LED). The device using a randomly networked AgNWs electrode had some problems such as the high threshold voltage (for operating the device) due to the random pores from the networked AgNWs. As a method of improvement, a composite electrode was formed by overlaying the ZnO:Ga on the AgNWs network. The device used the composite electrode revealed a low threshold voltage (4.4 Vth) and high current density compared to the AgNWs only electrode device. The brightness and current density of the device using composite electrode were 55.57 cd/㎡ and 41.54 mA/㎠ at the operating voltage of 12.8 V, respectively, while the brightness and current density of the device using (single) AgNWs only were 1.71 cd/㎡ and 2.05 mA/㎠ at the same operating voltage. The transmittance of the device revealed 65 % in a range of visible light. Besides the reliability of the devices was confirmed that the device using the composite electrode revealed 2 times longer lifetime than that of the AgNWs only electrode device.