• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.25-32
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• 1996

Solid electroyte nasion was synthesized by the optimized solid state reaction minimizing the volume fraction of secondary $ZrO_2$ and glassy phases. To compensate for the evaporation of Na and P during heat-treatment, excess Na and P were added to the starting composition $Na_{1+x} Zr_2 Si_x P_{d-x} O_{12}$ (x=2.1). Phases pure nasicon comparable in volume fraction to the one obtaied from sol-gel process were synthesized after the reaction at $1100~1150^{\circ}C$,$ P_{O2}>=0.1-0.15 $$ZrO_2$ increased with the heat-treatment time due to the decomposition of nasicon phase and that of glassy phase increased as partial oxygen pressure decreased. The synthesized nasion showed a good electrical conductivity of $-1{\times}10^{-2}({\omega}{\cdot}cm)^{-1}$ at $350^{\circ}C$.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.6
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• pp.83-88
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• 2011

Magnesium alloys have been focussed for the applications for lightweight of vehicle and electronics due to their high strength, low specific density and good damping capacity. This paper deals with the creep strength of Mg-Nd-Zr-Zn alloy. For the alloy, pure magnesium(99.9%) was melt with atmosphere of $0.3%SF_6$ and $25%CO_2$. After melting, 0.3% of zinc was inserted to stir for 10min at elevated temperature of $770^{\circ}C$. Master alloys of Mg-15%Nd and Mg-15%Zr were stirred in furnace. The creep tests were performed to obtain creep rate and rupture in the temperature range of 200 to $220^{\circ}C$ and 280 to $310^{\circ}C$ at an applied stress of 156 to 172MPa and 78 to 94MPa, respectively. The deformation mechanism was predicted dislocation climb from measured apparent activation energy and stress exponent. Also the increaser the temperature and stress the lower the stress exponent and activation energy. Finally, LMP parameter gives good information for the predicted creep rupture life.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1975-1979
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• 2005

Equal channel angular pressing has been employed to produce materials with ultra-fine grains that have high strength and high corrosion resistance properties. Along with the experiments, the finite element method has been widely performed to investigate the deformation behavior of specimen and the effects of process parameters of ECAP. In general, several steps of ECAP have been repeatedly executed. In this paper, the effects of sectional shape change have been investigated during ECMAP (RouteA, RouteC) with pure-Zr by using three-dimensional finite element analysis. The results have been compared with the experimental results.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.261-266
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• 1995

In this study, PZT solutions added impurities of Yttrium acetate were prepared by sol-gel processing and were deposited on Pt/ $SiO_{2}$/Si substrates at 5000 rpm for 20 sec. using spin-coating method. Coated films were annealed at 700-750.deg. C for 30 min. using conventional furnace method. Variations of the crystallographic structure and microstructure of PZT thin films with adding impurities were observed using XRD and SEM, and the electrical properties, such as relative permittivity, tan .delta., hysteresis curves and leakage currents, were measured. As the yttrium contents were increased, the remanent polarization and coercive field were decreased. Variations of remanent polarizations and coercive fields of pure and yttrium doped specimens according to polarization reversal cycles were observed using hysteresis measurement. PZT thin films added $Y^{3+}$ ions were completely crystallized at 750.deg. C. $Y^{3+}$ ions, as donor impurity, substituted Pb.sup 2+/ ions located at A-site of perovskite structure. By substitution of $Y^{3+}$ ions, leakage currents became less by decreasing the space charges. Degradation of remanent polarizations of Yttrium added specimens after fatigue was not observed and coercive fields increased more than those of pure PZT thin films.

• Corrosion Science and Technology
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• v.8 no.4
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• pp.162-169
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• 2009

Pure titanium and its alloys are drastically used in implant materials due to their excellent mechanical properties, high corrosion resistance and good biocompatibility. However, the widely used Ti-6Al-4V is found to release toxic ions (Al and V) into the body, leading to undesirable long-term effects. Ti-6Al-4V has much higher elastic modulus than cortical bone. Therefore, titanium alloys with low elastic modulus have been developed as biomaterials to minimize stress shielding. For this reason, Ti-30Ta-xZr alloy systems have been studied in this study. The Ti-30Ta containing Zr(5, 10 and 15 wt%) were 10 times melted to improve chemical homogeneity by using a vacuum furnace and then homogenized for 24 hrs at $1000^{\circ}C$. The specimens were cut and polished for corrosion test and Ti coating and then coated with TiN, respectively, by using DC magnetron sputtering method. The analyses of coated surface were carried out by field emission scanning electron microscope(FE-SEM). The electrochemical characteristics were examined using potentiodynamic (- 1500 mV~+ 2000 mV) and AC impedance spectroscopy(100 kHz~10 mHz) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The equiaxed structure was changed to needle-like structure with increasing Zr content. The surface defects and structures were covered with TiN/Ti coated layer. From the polarization behavior in 0.9% NaCl solution, The corrosion current density of Ti-30Ta-xZr alloys decreased as Zr content increased, whereas, the corrosion potential of Ti-30Ta-xZr alloys increased as Zr content increased. The corrosion resistance of TiN/Ti-coated Ti-30Ta-xZr alloys were higher than that of the TiN-coated Ti-30Ta-xZr alloys. From the AC impedance in 0.9% NaCl solution, polarization resistance($R_p$) value of TiN/Ti coated Ti-30Ta-xZr alloys showed higher than that of TiN-coated Ti-30Ta-xZr alloys.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.323-329
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• 2020

The cathodic hydrogen evolution ability of different pure metals and their long term galvanic corrosion behavior with pure Mg were investigated. The hydrogen evolution ability of pure Ti, Al, Sn and Zr is weak, while that of Fe, W, Cr, and Co is very strong. Initial polarization test could not completely reveal the cathodic behavior of the tested metals during long term corrosion. The cathodic hydrogen evolution ability may vary significantly in the long term galvanic tests for different metals, especially for Al whose cathodic current density reduced to 1/50 of the initial value. The anodic polarization shows that Al and Sn as alloying elements are supposed to provide relatively good passive effect for Mg alloy, while Ag can provide a slight passive effect and Zn has little passive effect.

• Applied Microscopy
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• v.47 no.3
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• pp.131-147
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• 2017

In this work further optical and electrical investigations of pure and Zr doped $Mn_3O_4$ (from 0 up to 20 at.%) thin films as a function of frequency. First, the refractive index, the extinction coefficient and the dielectric constants in terms of Zr content are reached from transmittance and reflectance data. The dispersion of the refractive index is discussed by means of Cauchy model and Wemple and DiDomenico single oscillator models. By exploiting these results, it was possible to estimate the plasma pulse ${\omega}_p$, the relaxation time ${\tau}$ and the dielectric constant ${\varepsilon}_{\infty}$. Second, we have performed original ac and dc conductivity studies inspired from Jonscher model and Arrhenius law. These studies helped establishing significant correlation between temperature, activation energy and Zr content. From the spectroscopy impedance analysis, we investigated the frequency relaxation phenomenon and hopping mechanisms of such thin films. Moreover, a special emphasis has been putted on the effect of the oxidation in air of hausmannite thin films to form $Mn_2O_3$ ones at $350^{\circ}C$. This intrigue phenomenon which occurred at such temperature is discussed along with this electrical study. Finally, all results have been discussed in terms of the thermal activation energies which were determined with two methods for both undoped and Zr doped $Mn_3O_4$ thin films in two temperature ranges.

• Analytical Science and Technology
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• v.6 no.3
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• pp.275-282
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• 1993

A direct and simultaneous method to determine the $SiO_2$ and $ZrO_2$ in zircon sand of raw mineral and its treated one were studied by optical emission spectrometer using DC arc source. The synthetic standard was prepared by mixing with pure metal oxide, and it was diluted with buffer(graphite) and flux($Li_2B_4O_7$). The mixing ratio of buffer and flux and its dilution ratio to sample was investigated in order to choose the best excitation conditions. The optimum mixing and dilution ratios were 0.22:1 and 40, and the standard deviations of analytical results were 1.9% for $SiO_2$ and 4.7% for $ZrO_2$.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.422-426
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• 2008

The effects of an addition of $ZrO_2$ on the microstructure and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. MgO + a 200 ppm $ZrO_2$ protective layer prepared by e-beam evaporation exhibited a secondary electron emission coefficient ($\gamma$) that was improved by 21% compared to that of a pure MgO protective layer. The relative density and Vickers hardness increased with a further addition of $ZrO_2$. These results suggest that the discharge properties and optical properties of MgO protective layers are closely related to the relative density and Vickers hardness. The good optical and electrical properties of $\gamma$, at 0.080, a grain size of $19\;{\mu}m$ and an optical transmittance of 91.93 % were obtained for the MgO + 200 ppm $ZrO_2$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.3
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• pp.109-114
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• 2008

Novel green long persistent phosphors of $CaZrO_3$ : $HO_{3+}$ have been synthesized at high temperature with weak reduction atmosphere by traditional solid state reaction method. The role of $H_3BO_3$ as flux and the suitable concentration of Ho as activator on the $CaZrO_3$ : $HO_{3+}$ long persistent phosphors has been investigated. Crystals of $HO_{3+}$ doped $CaZrO_3$ long persistent phosphores were characterized by fluorescence spectrophotometer and photoluminescence (PL). The main emission spectra of 546 nm peak was revealed through synthesizing at high temperature in $N_2$ gas atmosphere. The after glow emission spectra of $CaZrO_3$ : $HO_{3+}$ long persistent phosphores arise at 546 nm peak of narrow range. because that revealed pure green color. Green long persistent phosphors have been observed in the system for over 5 h after UV irradiation (254 nm). The main emission peak was ascribed to $HO_{3+}$ ions transition from $^5F_4$, $^5S_2{\to}^5I_3$, and the after glow may be ascribed to the trap centers in the $CaZrO_3$ host lattice.