• 제목/요약/키워드: Pulsed current

검색결과 496건 처리시간 0.026초

변압기를 이용한 외장형 HID 램프용 공진형 이그니터 (External Resonant Ignitior for HID Lamps by Using the Transformer)

  • 이우철
    • 조명전기설비학회논문지
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    • 제28권11호
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    • pp.9-16
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    • 2014
  • The electronic ballast for HID lamps needs high ignition voltage which is consisted of high voltage pulse ignitor. However, In the case of street lamp it is far from a lamp to a ballast, the conventional pulsed high voltage ignitor can not turn on the HID lamps because of reduction of ignition voltage. Therefore, it needs to do the research on a resonant ignition to turn on the HID lamps. However, the resonant circuit which is consisted of LC occurs over current, so the capacity of the ignitor increases. The capacity of the ignitor can be reduced by using the transformer. In this case, the capacitor for resonance is installed to the secondary of the transformer, and the capacitor needs high withstanding voltage. Therefore, it needs to do the research on a resonant ignition to reduce the voltage over the resonant capacitor by dividing the secondary of the transformer.

Novel Compact Current Type Pulse Power Generator

  • Min, B.D.;Kim, J.H.;Pavlov, E.;Yoo, D.W.;Rim, G.H.
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2005년도 전력전자학술대회 논문집
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    • pp.529-531
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    • 2005
  • This paper proposes a compact pulse generator fur NOx removal application for diesel automotive. The rising time is important factor to increase NOx removal efficiency in pulsed corona discharge method. Manufacturing cost and compactness of the pulse power generator should be satisfied for automotive application. The proposed pulse power uses a low voltage thyristor, a pulse transformer with the function of saturated magnetic switch, and series connected general diodes as opening switch to satisfy that requirements. With 200 resistor load, the experiment results show that the output voltage is 21kV, the rising time is about 21ns, and the pulse width (FWHM) is about 42ns.

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고집적 DRAM소자용 14/50/50 PLZT 박막의 특성에 관한 연구 (A Study on Characteristic of the 14/50/50 PLZT Thin Film for DRAM Capacitor)

  • 박용범;장낙원;백동수;마석범;최형욱;박창엽
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.118-121
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    • 1999
  • PLZT thin films were fabricated with different energy density by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Sr substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at $600^{\circ}C$, 200mTorr $O_2$ pressure for 2 J/$\textrm{cm}^2$ laser energy density. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{r}$=1289.9 P-E hysteresis loop of 14/ 50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/50 PLZT thin film was 10/ sup -7/=A/$\textrm{cm}^2$.>.

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Magnetic Characterization of the Nd Based Permanent Magnet by Newly-Developed Bipolar Pulse-Type Hysteresis Loop Tracer

  • Rhee, J.R.
    • Journal of Magnetics
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    • 제4권3호
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    • pp.73-75
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    • 1999
  • By appliying an slternate pulsed magnetic field -generated by using a sequential ignition circuit and a magnet exciting circuit- with peak value of about 10 T to the rod type Nd based magnet Nd2Fe12.7Cr1.3B with length of 5 mm and diameter of 3.6 mm, the basic magnetic properties such as saturation magnetization, residual magnetization, coercivity, maximum energy products, magnetic anisotropy and anisotropic field are investigated with obtaining the major and minor J-H loops of the magnet. The increase in coercivity due to eddy currents in ac measurement of coercivity is calculated considering eddy current loss by analyzing a wave of generating magnetic field. The average coercivity calculated for the magnet is about 12.2 kOe, anisotropy magnetic field and anisotropic constant are measured as 60 kOe 2.43 Mj/$m^3$, respectively.

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대 전력 전자빔 가속용 밀리파 펄스 연구 (A Study of Mili-wave Pulse Accelerating For High Power Electron Beam)

  • 김원섭;김종만;김영민
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1554-1555
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    • 2006
  • We have studied the backward wave oscillator, a power pulsed generator oscillator at 20 GHz has higher frequency then current one. An absolute instability linear analysis was used for the purpose of designing the slow wave structure. A large diameter of the slow wave structure was adopted to prevent the breakdown brought about by the increase of power density.

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PDP용 MgO 박막의 스퍼터 연구 (Sputtering of Magnesium Oxide this film for Plasma Display Panel Application)

  • 최영욱;김지현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 C
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    • pp.1732-1734
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    • 2003
  • An MgO thin film sputtering system for the PDP (Plasma Display Panel) applications has been developed. This system was manufactured with a vertical In-Line type of 42 inch, which has the length of 520 mm and the width of 900 mm. A reactive magnetron discharge for this sputtering was generated using an unipolar pulsed power supply which has functions of constant voltage (Max. 500 V) and current (Max. 15 A) control, frequency of $10{\sim}100$ kHz and duty ratio of $10{\sim}60$ %. The experiment was conducted under various conditions : $3{\sim}10$ mTorr of pressure, the ratio of $O_2$/Ar = $0.1{\sim}0.5$, 50 % of duty and power of $0.5{\sim}1.7$ kW. From the experiment, the deposition rate of a static state and a moving state were measured to be about 45 nm/min and 6 nm m/min at the distance of 50 mm between the target and the substrate, respectively.

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Highly-Efficient Optical Gating in Vanadium Dioxide Junction Device

  • Lee, Yong-Wook
    • 센서학회지
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    • 제20권4호
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    • pp.230-233
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    • 2011
  • In this paper, highly-efficient optical gating in a junction device based on vanadium dioxide($VO_2$) thin film grown by a sol-gel method was investigated as a gate terminal of a three-terminal device using infrared light with a wavelength of ~1554.6 nm. Due to the photoinduced phase transition, the threshold voltage of the $VO_2$ junction device, at which the device current abruptly jumps, could be tuned with a sensitivity of ~96.5 V/W by adjusting the optical power of the infrared light directly illuminating the device. Compared with the tuning efficiency of the previous device fabricated using $VO_2$ thin film deposited by a pulsed laser deposition method, the threshold voltage of this device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which is ~4.9 times larger than the previous device.

Development of $Al_2O_3-Ni$ FGMs Produced by Spark Plasma Sintering

  • Casari, Francesco;Zadra, Mario;Girardini, Luca;Molinari, Alberto
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.87-88
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    • 2006
  • Ceramic-Metal Functionally Graded Materials (FGM) are of great interest for application as Thermal Barrier Coating (TBC) or Wear Resistant Coating (WRC). Spark Plasma Sintering (SPS) is a promising techniques for time-saving consolidation of laminated/graduated powder systems: SPS is a pressure-assisted electrical sintering method which directly applies a pulsed DC current as heat source. In the present work, production of $Al_2O_3-Ni$ FGMs by means of Spark Plasma Sintering is considered; effect of sintering condition on density, hardness and fracture toughness is studied. Problems correlated to this new processing technology are discussed.

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Fabrication of Nano-laminar Glass Composite Using Thin Flake

  • Kakisawa, Hideki;Minagawa, Kazumi;Halada, Kohmei
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.330-331
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    • 2006
  • Fabrication of a nano-laminar ceramic composite by sintering thin ceramic plates was examined. Silver-coated glass flakes with a thickness of less than $1{\mu}m$ were consolidated by pulsed current sintering or hotpressing to obtain model composites. The samples sintered at the optimum conditions were fairly dense, and the flakes were aligned by uniaxial press. The metal coating remained on the flakes through the sintering process, and became an interface layer between the flakes. No crack propagation through the transverse direction of the lamellar was observed in the indentation test. The possibilities of high resistance against crack propagation was suggested.

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메모리 소자 응용을 위한 펄스 레이저 증착법으로 제작된 PLT박막의 열처리 효과 연구 (Effect of grain size of Pb(La,Ti)O$_3$thin films grown by pulsed laser deposition for memory device application)

  • 허창회;심경석;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.861-864
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    • 2000
  • Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.

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