• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.113-117
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• 2020

In this paper, We investigated the effect of heat treatment process using photo-thermal effect in order to improve mechanical properties of nanostructure on polymer films made by nanoimprint process with hybrid resin. Nanostructures which have a low refractive characteristic were fabricated by UV nanoimprint and after that heat treatment was performed using IPL (intense pulsed light) under process condition of 550 V voltage, pulse width 5 ms, frequency 0.5 Hz. The transmittance and mechanical property of fabricated nanostructure films were evaluated to observe changes in the pattern transfer rate and mechanical properties of nanostructures. The transmittance of the nanostructure was measured at 97.6% at 550 nm wavelength. Nanoindentation was performed to identify improved anti-scatch properties. Result was compared by the heat source. In case of post treatment with IPL, hardness was 0.51 GPa and in the case of hotplate was 0.27 GPa, resulting the increase of hardness of 1.8 times. Elastic modulus of IPL treated sample was 5.9GPa and Hotplate treated one was 4GPa, showing the 1.4 time increase.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.95-97
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• 2004

We studied a low temperature ion doping process for poly-Si Thin Film Transistor (TFT) on plastic substrates. The ion doping process was performed using an ion shower system, and subsequently, excimer laser annealing (ELA) was done for the activation. We have studied the crystallinity of Si surface at each step using UV-reflectance spectroscopy and the sheet resistance using 4-point probe. We found that the temperature has increased during ion shower doping for a-Si film and the activation has not been fulfilled stably because of the thermal damage against the plastic substrate. By trying newly a pulsed ion shower doping, the ion was efficiently incorporated into the a-Si film on plastic substrate. The sheet resistance decreased with the increase of the pulsed doping time, which was corresponded to the incorporated dose. Also we confirmed a relationship between the crystallinity and the sheet resistance. A sheet resistance of 300 ${\Omega}$/sq for the Si film of 50nm thickness was obtained with a good reproducibility. The ion shower technique is a promising doping technique for ultra low temperature poly-Si TFTs on plastic substrates as well as those on glass substrates.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.73-76
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• 2005

To widen the band gap of ZnO, we have investigated $Zn_{1-x}Mg_xO(ZMO)$ thin films prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$. From X-ray diffraction patterns, ZMO films show only the (0002) and (0004) diffraction peaks. It means that the flints have the wurtzite structure. Segregation of ZnO and MgO phases is found in the films with x=0.59. All the samples are highly transparent in the visible region and have a sharp absorption edge in the UV region. The shift of absorption edge to higher energy is observed in the films with higher Mg composition. The excitonic nature of the films is clearly appeared in the spectra for all alloy compositions. The optical band-gap ($E_g$) of ZMO films is obtained from the ${\alpha}^2$ vs Photon energy plot assuming ${\alpha}^2\;\propto$ (hv - $E_g$), where u is the absorption coefficient and hv is the photon energy. The value of $E_g$ increases up to 3.72 eV for the films with x=0.35. It is important to adjust Mg composition control for controlling the band-gap of ZMO films.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.475-479
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• 2007

Pulsed laser deposition was utilized to grow MnS thin films on c-sapphire substrate using a KrF excimer laser at growth temperatures that ranged from room temperature to $700^{\circ}C$. The results of X-ray diffraction (XRD) and UV-visible spectroscopy were employed to investigate the structural and optical properties of the MnS films. While the growth rate decreased as $T_s$ increased, the overall quality of the film improved. The highest quality MnS film was obtained at $700^{\circ}C$. Variations in the $T_s$ resulted in the MnS films exhibiting different growth mechanisms. The oriented (200) rocksalt MnS film was grown at room temperature. In the case of higher $T_s,\;200{\sim}500^{\circ}C$, the films consisted of mixed phases of rocksalt and wurtzite. The main structure of the films was altered to (111) rocksalt when the temperature was increased to in excess of $600^{\circ}C$. This behavior may very well be the result of elements such as surface energy and atomic arrangement during the growth process. The optical band gap of the obtained ${\alpha}-MnS$ film was estimated to be 3.32 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• Rapid Communication in Photoscience
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• v.4 no.3
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• pp.50-53
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• 2015

$SnO_2$ thin films were deposited on fused silica substrate by pulsed laser deposition under transverse magnetic field. We have explored the effects of magnetic field and ablation laser wavelength on the optical properties of laser-induced plasma plume and structural characteristics of the deposited $SnO_2$ films. Optical emission from the plume was monitored using an optical fiber to examine the influence of magnetic field on the population of the excited neutral and ionic species and their decay with times after laser ablation. Also, we employed photoluminescence, x-ray diffraction, and UV-Vis absorption to characterize $SnO_2$ films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.26-29
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• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.200-202
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• 2004

ZnO thin films were grown at different plume-substrate angles by pulsed laser deposition(PLD). From the X-ray diffraction(XRD) result, all ZnO thin films were found to be well c-axis oriented and c-axis lattice constant approached the value of bulk ZnO as plume-substrate(P-S) angle decreased. The grain size of ZnO thin films measured by atomic force microscopy increased and the UV intensity of ZnO thin films investigated by photoluminescence increased as P-S angle decreased. It is found that the improvement of structural and optical properties mainly comes from the reduction of the flux of ablated species arriving on a substrate per a laser shot by tilting a substrate parallel to the plume propagation direction.

• Korean Journal of Food Science and Technology
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• v.31 no.2
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• pp.368-374
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• 1999

This study was designed to investigate effects of pulsed electric field (PEF) treatment on physiological changes of microbial cells, using domestically fabricated pilot scale PEF device. The effect of non-thermal PEF treatment on physiological characteristics of microorganisms was determined by salt resistance, the amount of UV absorbents, cell staining, recovery rate of defected cells, and changes in structure of cell membrane. Salt resistance of Escherichia coli, Bacillus subtilis and Rhodotorula minuta was examined after PEF treatment at 40 kV/cm, 84 pulse, $10{\mu}s$ pulse duration. Approximately $1\;log_{10}$ cell number of viable microorganisms was decreased by addition of salt. PEF treatment significantly increased the amount of UV absorbents at 260 and 280 nm because of leakage from damaged cell membrane by PEF treatment. Although three kinds of microorganisms treated by PEF were difficult to be observed due to their cell membrane damage, untreated cells were clearly observed by a microscope. PEF-treated R. minuta was not stained by methylene blue due to cell membrane defect. When E. coli, B. subtilis and R. minuta were cultured after PEF treatment, they showed 5, 4, and 8 hr longer lag phase, respectively, compared to control, but growth rates were not affected.