• Title/Summary/Keyword: Pulsed Nd:YAG

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Effect of Pulsed Nd:YAG Laser Energy on Crystallization in $Li_2O - Al_2O_3 - SiO_2$ Glass

  • Lee, Yong--Su;Kang, Won--Ho
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2001.07a
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    • pp.104-109
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    • 2001
  • A 355 nm (3.5 eV) neodymium:yttrium aluminum gamet laser, produced by a harmonic generator, was used to create silver metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+ ions. The pulse width and frequency of the laser were 8 ns and 10 Hz, respectively. Heat treatment was conducted at 570 C for 1 h, following laser irradiation, to produce crystalline growth, after which a LiAlSi3O8 crystal phase appeared in the laser-irradiated Li2O A1203 SiO2 glass. For the Present study, we compared the effect of laser-induced crystallization on glass crystallization with that of spontaneous crystallization by heat treatment.

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Studies on weldment performance of Ti/Al dissimilar sheet metal joints using laser beam welding

  • Kalaiselvan, K.;Elango, A.;Nagarajan, N.M.;Mathiazhagan, N.;Vignesh, Kannan
    • Coupled systems mechanics
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    • v.7 no.5
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    • pp.627-634
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    • 2018
  • Laser beam welding is more advantageous compared to conventional methods. Titanium/Aluminium dissimilar alloy thin sheet metals are difficult to weld due to large difference in melting point. The performance of the weldment depends upon interlayer formation and distribution of intermetallics. During welding, aluminium gets lost at the temperature below the melting point of titanium. Therefore, it is needed to improve a new metal joining techniques between these two alloys. The present work is carried for welding TI6AL4V and AA2024 alloy by using Nd:YAG Pulsed laser welding unit. The performance of the butt welded interlayer structures are discussed in detail using hardness test and SEM. Test results reveal that interlayer fracture is caused near aluminium side due to low strength at the weld joint.

Effect of post-annealing treatment on the properties of ZnO thin films grown by PLD (PLD로 증착한 ZnO 박막의 후열처리 효과 연구)

  • Bae, Sang-Hyuck;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04a
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    • pp.125-128
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    • 2000
  • ZnO thin films on silicon substrates have been deposited by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the effect of oxygen post-annealing treatment on the property of ZnO thin films, deposited film has been annealed at the substrate temperature of $440^{\circ}C$. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been characterized be improved which results in higher UV emission intensity of photoluminescence.

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Acoustic Emission Monitoring during Laser Spot Welding of Stainless Steel Sheets (스테인레스 박강판의 레이저 점 용접 시 음향방출 실시간 모니터링)

  • Lee Seoung Hwan;Choi Jung Uk;Choi Jang Eun
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.4
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    • pp.60-67
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    • 2005
  • Compared with conventional welding, laser spot welding offers a unique combination of high speed, precision and low heat distortion. This combination of advantages is attractive for manufacturing industries including automotive and electronics companies. In this paper, a real time monitoring scheme fur a pulsed Nd:YAG laser spot welding was suggested. Acoustic emission (AE) signals were collected during welding and analyzed for given process conditions such as laser power and pulse duration. A back propagation artificial neural network, with AE frequency content inputs, was used to predict the weldability of stainless steel sheets.

Distance measurement using pulsed eye-safe laser (펄스형 eye-safe 레이저를 이용한 거리측정)

  • 유병헌;조성학;장원석;김재구;황경현;이동주
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.106-109
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    • 2004
  • In this project, we have developed the eye-safe LRF system of 1.54 ${\mu}{\textrm}{m}$ wavelength using OPO. The maximum measured distance was 3.7km in outdoor experiment. We used Nd:YAG (1064nm) as a laser medium. It was applied BBO to construct the system. We also developed a time-counter for the range finder using a method of TOF (time of flight). The counter-clock used at the time counter was 320MHz making resolution within $\pm$1m. Start and stop signals were detected by two channel systems using PIN and APD. The LRF's repetition rate was 4 times per minute. The energy was measured to be over 9mJ. And, pulse-duration was 23ns. Resolution was $\pm$2m at the distance measurement using a target.

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Simultaneous Optimization of Multiple Quality Characteristics in Laser Beam Cutting Using Taguchi Method

  • Dubey, Avanish Kumar;Yadava, Vinod
    • International Journal of Precision Engineering and Manufacturing
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    • v.8 no.4
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    • pp.10-15
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    • 2007
  • Taguchi methods have been used for a long time to improve the product quality and process performance of a manufacturing system, Few researchers have applied this methodology in laser beam cutting (LBC) of sheet metals and found the considerable improvement in cut qualities. In all experimental investigations of LBC so far, the objective was to optimize the single quality characteristic at a time. In this paper the simultaneous optimization of multiple quality characteristics such as Kerf width and material removal rate (MRR) during pulsed Nd:YAG LBC of thin sheet of magnetic material (high Silicon-steel) has been presented using Taguchi's quality loss function. The results show the considerable improvement in multiple S/N ratio as compared to initial cutting condition. Also, the comparison of results from single and multi-objective optimization have been presented and it was found that the loss in quality is always possible shifting from single quality to multiple quality optimization.

Effect of Hydrogen Passivation on the Photoluminescence of Si Nanocrystallites Thin Flms (수소 Passivation에 따른 실리콘 나노결정 박막의 광학적 특성 변화 연구)

  • 전경아;김종훈;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.29-32
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    • 2001
  • Hydrogen passivation of Si nanocrystals identifies luminescence mechanism indirectly. Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser After deposition, Si nanocrystallites thin films have been annealed at 600$^{\circ}C$ and 760$^{\circ}C$ in nitrogen ambient, respectively. Hydrogen passivation was subsequently performed at 500$^{\circ}C$ in forming gas (95 % N$_2$ + 5 % H$_2$) for an 1 hour. We report the photoluminescnece(PL) property of Si thin films by the hydrogen passivation. The luminescence mechanism of Si nanocrystallites has also been investigated.

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Effect of deposition temperature on the photoluminescence of Si nanocrystallites thin films (증착 온도에 따른 실리콘 나노결정 박막의 광학적 특성변화 연구)

  • Jeon, Kyung-Ah;Kim, Jong-Hoon;Choi, Jin-Back;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04b
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    • pp.38-41
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    • 2002
  • The variation of photoluminescence(PL) properties of Si thin films was investigated by changing deposition temperatures, Si-rich silicon oxide films on p-type (100) Si substrate have been fabricated by pulsed laser deposition(PLD) technique using a Nd:YAG laser. During deposition, the substrates were kept at the temperature range of room temperature(RT) to $400^{\circ}C$. After deposition, samples were annealed at $800^{\circ}C$ in nitrogen ambient, Strong Blue PL has been observed on RT-deposited Si nanocrystallites. When the deposition temperature was increased over $100^{\circ}C$, PL intensities abruptly decreased. The experimental results show the growing mechanism of Si nanocrystallites by PLD.

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Annealing effect of Si nanocrystallites thin films (실리콘 나노결정 박막의 후열처리 효과 연구)

  • Jeon, Kyung-Ah;Kim, Jong-Hoon;Choi, Jin-Baek;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.04a
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    • pp.88-91
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    • 2003
  • Si nanocrystallites thin films have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperature range of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas ($95%N_{2}+5%H_{2}$) at $500^{\circ}C$. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. As a result of photoluminescence spectra and infrared absorption spectra, we conclude that the violet-indigo PL efficiency is related with oxygen vacancy in the $SiO_x$(x= 1.6-1.8) matrix.

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$NO_x$ Measurement of Exhaust Gas plasma by Laser Induced Fluorescence Spectroscopy (배기가스 플라즈마에서의 레이저유기형광법(LIF)에 의한 $NO_x$ 계측)

  • 전용우;하장호;박원주;이광식;최상태;윤영대
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 1999.11a
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    • pp.95-98
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    • 1999
  • This paper describes preliminary discussions on spatial distribution of NO density, which is mostly contained in simulated NOX exhaust, between a wire-cylinder geometry discharge gaps by using Laser Induced Fluorescence(LIF) Spectroscopy. Spatial distribution of NO density will be measured with varying NO concentrations from 166 to 644[ppm] and diameters of central electrode from 6 to 10mm. Pulsed Nd:YAG laser, Optical Parametric Oscillator(OPO), and Frequency Doubler are used to excite NO molecules to their excited state.

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