• Journal of Periodontal and Implant Science
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• v.26 no.4
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• pp.989-1002
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• 1996

The purpose of this study was to determine the effect of a pulsed Nd:YAG laser irradiation on human gingival tissues. The patients, who were planned to be treated by clinical crown lengthening procedure and gingivectomy, were selected. All the patients received oral hygiene instruction, scaling and root planing at preoperation. The crest of gingival tissue on upper and lower anterior teeth was irradiated by a pulsed Nd:YAG laser(El. EN. EN060, Italy) with a fiber optic of 300 m in contact mode for 20 seconds. Gingival tissues were divided into 4 groups according to the laser power of 1.0W(10Hz, 100mJ), 2.0W(20Hz, 100mJ), 3.0W(30Hz, 100mJ) and 4.0W(40Hz, 100mJ). Immediately after the laser irradiation, the specimens were excised, fixed 10% neutral formalin, sectioned $4-6{\mu}m$ thick, stained by Hematoxylin-Eosin and Periodic Acid Schiff stain and observed under light microscope. The removed tissue depth and the coagulated layer depth due to a laser irradiation by a laser irradiation were measured on the microphotographs. The difference of measurements according to the different laser power was statistical1y analyzed by Kruskal Wallis Test with SAS program. The results were as follows : 1. In histologic findings of irradiated gingival tissues; a. In the irradiated gingival specimen with 1.0W laser power, some vesicles were observed in limited superficial layer of gingival epithelium. b. In the irradiated gingival specimen with 2.0W and 3.0W laser power, the epithelium was almost removed except for the traces of viable basal cell remnants at ret peg, and coagulation necrosis related with the thermal effect of laser was noted. c. In the irradiated gingival specimen with 4.0W laser power, complete removal of epithelium, partial removal of underlying connective tissue, and the coagulation necrosis of subjacent gingival tissue were shown. 2. The removed tissue depth was deeper in the irradiated specimens with higher power. There was a statistical significance in the difference of removed tissue depth between 1.0W group ($44.54{\pm}6.99um$) and 3.0W group ($99.75{\pm}6.64{\mu}m$), and between 1.0W group($44.54{\pm}6.99{\mu}m$) and 4.0W group($111.36{\pm}4.50{\mu}m$), and between 2.0W group($98.01{\pm}4.53{\mu}m$) and 4.0W group($111.36{\pm}4.50{\mu}m$)(P<0.05). 3. The coagulated layer depth was deeper in the irradiated specimens with higher power. There was a statistical significance in the difference of coagulated layer depth between 1.0W group($31.82{\pm}8.99{\mu}m$) and 3.0W group($55.99{\pm}20.94{\mu}m$), and between 1.0W group($31.82{\pm}8.99{\mu}m$) and 4.0W group($83.68{\pm}10.34{\mu}m$)(P<0.05). From this study, the results demonstrated that the effects of a pulsed Nd:YAG laser irradiation on gingival tissues seemed to depend on the laser power and that the irradiation with high power could be harmful to adjacent healthy tissue.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.169-172
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• 2003

Silicon nanocrystalline thin films on p-type (100) silicon substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355, 532, and 1064 nm. The base vacuum in the chamber was down to $10^-6$ Torr and the laser energy densities were 1.0~3.0 J/$\textrm{cm}^2$ After deposition, silicon nanocrystalline thin films have been annealed at nitrogen gas. Strong Blue and green luminescence from silicon nanocrystalline thin films have been observed at room temperature by photoluminescence and its peak energies shift to green when the wavelength is increased from 355 to 1064 nm.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.1
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• pp.75-81
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• 2014

Laser beam machining has been known as efficient for glass micromachining. It is usually used the ultra-short pulsed laser which is time-consuming and uneconomic process. In order to use economic and powerful long pulsed laser, indirect processing called laser-induced backside wet etching (LIBWE) is good alternative method. In this paper, micromachining of glass using Nd:YAG laser with nanosecond pulsed beam has been attempted. In order to improve shape accuracy, combined processing with magnetic stirrer has been widely used. Magnetic stirrer acts to circulate the solution and remove the bubble but it is not suitable for deep hole machining. To get better effect, ultrasonic vibration was applied for improving shape accuracy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.127-130
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• 2001

Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films depending on the variation of the annealing temperature.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.11
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• pp.1483-1491
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• 2001

Enhancement of pulsed-laser ablation by an artificially deposited liquid film is presented. Measurements of ablation rate, ablation threshold, and surface topography arc performed. Correlation between material ablation and photoacoustic effect is examined by the optical beam deflection method. The dependence of ablation rate on liquid-film thickness and chemical composition is also examined. The results indicate that photomechanical effect in the phase explosion of liquid is responsible for the enhanced ablation. The low critical temperature of liquid induces explosive vaporization with localized photoacoustic excitation in the superheat limit and increases the ablation efficiency. Experiments were carried out utilizing a Q-swiched Nd:YAG laser at near-threshold laser fluences with negligible plasma effect (up to ∼100 MW/cm$^2$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.246-250
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• 2001

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of355 nm. In order to investigate the emission properties of ZnO thin films, Pl measurements with an Ar ion laser a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited Pl bands centers around 390, 510 and 640 nm, labeled near ultra-violet(UV), green and orange bands. Structural properties of ZnO thin films are analyzed with X-ray diffraction(XRD).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.115-116
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• 2005

Si nanowires (NWs) were fabricated in vacuum furnace by using a Nd:YAG pulsed laser with the wavelength of 325 nm. Commercial p-type Si wafer is used for target, and any catalytic materials are not used. Scanning electron microscopy (SEM) images indicate that the diameters of Si NWs ranged from 10 to 150 nm. Si NWs have various size and shape with a substrate position inside a furnace, and their morphologic construction is reproducible. The formation mechanism of the NWs is discussed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.103-108
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• 2005

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300\~450^{\circ}C$ and oxygen gas flow rate of $100\~700\;sccm$. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.75-78
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• 2002

Si thin films on p-type (100) Si substrate have been prepared by a pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films with the variation of the annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.539-542
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).