• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.140-143
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• 2005

Carbon Nanotube(CNTs) counter electrode is a promising alternative to Platinum counter electrode for dye sensitized solar cells (DSSCs). In this study, CNT counter electrodes having different visible light transmittance were prepared on fluorine-doped tin oxide (FTO) glass surface by spray coating method. Microstructural images show that there are CNT-tangled region coated on FTO glass counter electrodes. Using such CNT counter electrodes and screen printed $TiO_2$ electrodes, DSSCs were assembled and its I-V characteristics have been studied and compared. Light energy conversion efficiency of DSSCs increased with decreasing in light transmittance of CNT counter electrode. Efficiency of DSSCs having CNT counter electrode is compatible to that of Pt counter electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.691-694
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• 2004

염료감응형 태양전지는 다공질 $TiO_2$ 전극막, 광감응형 염료, 전해질, 상대전극으로 구성된, 전기화학적 원리를 응용한 신형태양전지이다. 염료감응형 태양전지의 상대전극으로 주로 Pt가 사용되고 있는데 본 연구에서는 탄소나노튜브를 사용하여 상대전극으로서의 가능성을 조사하였다. 제조된 탄소나노튜브 상대전극은 cyclic voltammetry와 Impedance spectroscopy을 이용하여 전기화학적 특성을 측정하였다. 또한 탄소 나노튜브 상대 전극이 태양전지의 효율 및 그 특성에 미치는 영향을 알아보기 위하여 단위 셀 태양전지를 제조하여 단파장 하에서의 광전특성을 측정하고, 이를 바탕으로 탄소나노튜브의 상대전극으로서의 가능성을 제시하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.403-404
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• 2012

We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2005년도 춘계학술발표논문집
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• pp.303-305
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• 2005

내부 순환형 회분식 반응기에서 $UV/TiO_2$ 시스템을 이용하여 기상의 휘발성유기 화합물 제거 반응 특성을 온도와 농도 및 자외선 파장 및 광도에 대하여 고찰하였다. 또한 광촉매에 Pt, Pd 등의 첨가에 의한 반응성의 상승을 고찰하였다. 온도에 다른 연구결과 반응온도보다 온도에 의한 흡착특성에 따른 영향을 더 크게 받는 것으로 나타났다. 또한 일부의 반응에서는 수분에 의하여 반응성이 증가하는 것으로 나타났다.

• 한국에너지공학회:학술대회논문집
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• 한국에너지공학회 1995년도 춘계학술발표회 초록집
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• pp.60-68
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• 1995

This work wes performed to investigate the photocatalytic decolorization of waste water from textile industries. Methyl orange was used as a target dye with suspended Hombikat TiO$_2$ photocatalyst with a recirculating annular photoreactor. 1 wt % Pt-doped Hombikat thin film tubular reactor with parabolic reflector also wes usedin this experiment. The pH effect and flow rate effect on photobleaching of 0.012 g/l methyl orange solution, AtpH=3 Colour of methyl orange was completely bleached in 30 min with a 20 W UV lamp.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.109-112
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• 1999

The PZT(10/90)/(90/17) heterolayered thin films were fabricated by the spin-coaling on the Pt/Ti/SiO$_2$/Si substrate using the PZT(10/90) and PZT(70/10) metal alkoxide solutions. The effect of heterolayered thin films on the ferroelectrics and electrical properties have been investigated. The lower PZT layers provided the nucleation site for the formation of a perovskite phase of the upper PZT films. Dielectric constant increased with increasing the number of coatings, and it was about 569.9 at PZT-6 heterolayered films.

• 한국막학회:학술대회논문집
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• 한국막학회 2004년도 Proceedings of the second conference of aseanian membrane society
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• pp.39-42
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• 2004

Ceramic membranes have attracted a great attention because they have excellent resistance to most organic solvents and can be used over a wide temperature range. Especially, titania (titanium oxide, TiO$_2$) shows excellent chemical resistance and can be used both acidic and alkali solutions, and therefore, titania is one of the most promising materials for the preparation of porous membranes; titania membranes having pore sizes in the range of nanofiltration (NF) to ultrafiltration (UF) membrane have been prepared by the sol-gel process (Tsuru 2001).(omitted)

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2006년도 추계학술발표논문집
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• pp.276-279
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• 2006

내부 순환형 회분식 반응기에서 UV/$TiO_2$ 시스템을 이용하여 기상의 아세톤과 알데히드류 유기화합물 분해 반응 특성을 온도와 농도 및 자외선 파장 및 광도에 대하여 고찰하였다. 또한 기존의 공기정화기에 장착할 수 있는 담체를 도출하고자 하였다. 새로운 광촉매 담지체로는 전처리 필터로 사용되는 메쉬망 형태를 사용하였으며, 광조사율이 높고 광촉매의담지량을 늘릴 수잇는 방안에 대한 연구를 수행하였다. 본 연구 결과 광접촉 면적 대비 높은 반으성을 나타내었으며 Pt, Pd 등의 첨가에 의한 반응성 상승이 나타났다. 메쉬망 형태의담지체 사용시 광조사면적 대비 담지량의증가에 의하여 온도에 의한 흡착특성에 따른 영향을 더 크게 받는 것으로 나타났다.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.875-881
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• 2004

Fundamental results obtained from an atomic force microscope (AFM) chemically-induced direct nano-lithography process are presented, which is regarded as a simple method for fabrication nm-scale devices such as superconducting flux flow transistors (SFFTs) and single electron tunneling transistors (SETs). Si cantilevers with Pt coating and with 30 nm thick TiO coating were used as conducting AFM tips in this study. We observed the surfaces of superconducting strip lines modified by AFM anodization' process. First, superconducting strip lines with scan size 2 ${\mu}{\textrm}{m}$${\times}$2 ${\mu}{\textrm}{m}$ have been anodized by AFM technology. The surface roughness was increased with the number of AFM scanning, The roughness variation was higher in case of the AFM tip with a positive voltage than with a negative voltage in respect of the strip surface. Second, we have patterned nm-scale oxide lines on ${YBa}-2{Cu}_3{O}_{7-x}$ superconducting microstrip surfaces by AFM conductive cantilever with a negative bias voltage. The ${YBa}-2{Cu}_3{O}_{7-x}$ oxide lines could be patterned by anodization technique. This research showed that the critical characteristics of superconducting thin films were be controlled by AFM anodization process technique. The AFM technique was expected to be used as a promising anodization technique for fabrication of an SFFT with nano-channel.