• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1586-1588
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• 2003

The Pb$(Zr{_{0.7}}Ti_{0.3})O_3$[PZT(70/30)] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering method. The effects of Ar/$O_2$ ratio on the structural and dielectric properties of PZT thin fillms were investigated. In the case of the PZT thin films deposited with condition of 50/50$(Ar/O_2) $ ratio, the grain of the PZT thin films were fine and uniform. Increasing of $O_2$ ratio, the dielectric constant was increased. In this case the dielectirc constant and dielectric loss of PZT thin fims were about 627 and 0.010, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.133-135
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• 2006

SBN60 and SBN60/30 thin films were deposited by ion beam sputtering technique. Using the ceramic target of the same composition and Pt(100)/$TiO_2$/$SiO_2$/Si or Pt(111)/Ti/$SiO_2$/Si substrate, crystallization and orientation behavior as well as electric properties of the films were examined, Thickness was controlled to $3000{\AA}$ and the films were heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation and crystallization behavior were observed which showed the dependence on processing condition($O_2$/Ar ratio, substrate temp, annealing temp...).

• Journal of Photoscience
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• v.1 no.1
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• pp.31-37
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• 1994

Photoirradiation at > 300 nm onto a suspension of platinized TiO$_2$ (TiO$_2$-Pt) particles in an aqueous solution. of N$_{\varepsilon}$-carbamyI-L-lysine (Lys(CONH)$_2$) induced the selective N-cyclization of Lys(CONH$_2$) into almost optically pure L-pipecolinic acid (PCA) under argon atmosphere at ambient temperature. Among various TiO$_2$-Pt catalysts, a P-25 (Degussa) powder platinized via impregnation from chloroplatinic acid followed by hydrogen reduction at 753 K exhibited the highest photocatalytic activity for Lys(CONH$_2$) consumption and L-PCA production. GC-MS analyses of L-PCA obtained photocatalytically from $^{15}$N$\alpha$-Lys(CONH$_2$) revealed the selective formation $^{15}$N-substituted L-PCA. This implies that the mechanism for L-PCA production contains selective cleavage of C$_{\varepsilon}$-N bond and intramolecular alkylation at $\alpha$-amino group. Effect of pH on the rate of this photocatalytic reaction was investigated in detail and compared with the pH-dependent charge distribution in Lys(CONH$_2$) molecule. It is clarified that protonation-deprotonation of $\alpha$-amino group gives marked influence on the rate and selectivity of the photocatalytic reaction. On the basis of these results, it is concluded that the selective production of optically pure L-PCA, especially in an acidic suspension of TiO$_2$-Pt, was attributed to the enhanced protonation of $\alpha$-amino group to prevent undesirable oxidation by photogenerated positive holes and blocking of $\varepsilon$-amino group to yield racemic Schiff base intermediate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.134-139
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• 2000

Ternary system of 40PMN-30PT-30PMW was prepared by using different reaction process. The PMN-PT was synthesized firstly, then it reacted to $PbWO_4$ as PbO and $WO_3$ sources. The dielectric constants were dependent on the density of sintered body and decreased with sintering temperature above $950^{\circ}C$. The highest dielectric constant was 24,000 in a sample sintered at $950^{\circ}C$ with the dielectric loss of 3 %. The temperature dependence of the dielectric constant were decreased with the increase of sintering temperature due to the appearance of double peak maxima. The lowest change in dielectric constant was -37-0 % from -55 to $125^{\circ}C$in a sample sintered at $1150^{\circ}C$ with dielectric constant of 9,900 at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.439-444
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• 2005

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

• Journal of Industrial Technology
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• v.25 no.A
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• pp.157-162
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• 2005

In this study, the fabrication of PZT films was performed from a multilayer structure comprising $TiO_2$, $ZrO_2$ and PbO thin films prepared by rapid themal chemical vapor deposition(RTMOCVD). $TiO_2$, $ZrO_2$ and PbO are the component layers of oxide multilayer system for a single phase PZT thin film. The composition control of PZT thin film was done by the thickness control of individual component layer. The composition ratio of Pb:Ti:Zr with thickness were 1:0.94:0.55. Occurrence of a single-phase of PZT was initiated at around $550^{\circ}C$ and almost completed at $750^{\circ}C$ under the fixed time of 1hr. As the concentration of Pb increased, the roughness and crystallization in the film increased. From the as result of using XPS and TEM, the single phase formation through annealing is evident. The electrical properites of the prepared PZT thin film(Zr/Ti=40/60, 300 nm) on a Pt-coated substrate were as follow: dielectric constant ${\varepsilon}_r=475$, coercive field Ec=320 kV/cm, and remanant polarization $P_r=11{\mu}C/cm^2$ at an applied voltage of 18 V.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.39-44
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• 2001

솔-젤법으로 S $r_{0.9}$B $i_{2.1}$T $a_2$$O_{9}$ stock solution을 합성하고, Ir $O_2$/ $SiO_2$/Si 및 기판 위에 스핀코팅법으로 약 2000$\AA$ 정도의 두께를 가지고 SBT 박막을 제조하였다. Pt/Ti $O_{x}$ 전극을 사용한 SBT 박막과 비교하였을 때 Ir $O_2$전극을 사용한 SBT 박막의 경우 더 낮은 급속 열처리 온도 즉, 72$0^{\circ}C$에서 형석상에서 층상 페롭스카이트 상으로의 상전이가 관찰되었다. 그리고, Ir $O_2$전극을 사용한 SBT 박막은 낮은 열처리에서 결정성장이 이루어졌다. Ir $O_2$전극을 사용한 SBT 박막은 $650^{\circ}C$에서 열처리하였을 때 포화된 이력곡선을 얻었지만, Pt/Ti $O_{x}$ 전극을 사용한 SBT 박막은 $700^{\circ}C$에서 열처리하였을 때 이력곡선이 관찰되었다. Ir $O_2$전극을 사용한 SBT 박막은 $700^{\circ}C$의 열처리에서 8.79 $\mu$C/$ extrm{cm}^2$ (3V)의 2Pr 값을 나타내었다.나타내었다.다.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.427-430
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• 2008

BaTiO3 and SrTiO3 thin films were fabricated on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition process. The dependence of the deposited film quality upon the partial oxygen pressure during the deposition process was importantly examined. Regardless of the oxygen pressure, the as-deposited films were not fully crystallized. However, the film deposited at low oxygen pressure became well crystallized after the annealing process. It was concluded, therefore, that the partial oxygen pressure is reduced as low as possible during the deposition process and then anneal the as-deposited samples at ambient pressure to fabricate the well crystallized SrTiO3 and BaTiO3 films by laser ablation.

• Journal of Powder Materials
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• v.22 no.5
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• pp.326-330
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• 2015

In this study, we demonstrate the photoelectrochromic devices composed of $TiO_2$ and $WO_3$ nanostructures prepared by anodization method. The morphology and the crystal structure of anodized $TiO_2$ nanotubes and $WO_3$ nanoporous layers are investigated by SEM and XRD. To fabricate a transparent photoelectrode on FTO substrate, a $TiO_2$ nanotube membrane, which has been detached from Ti substrate, is transferred to FTO substrate and annealed at $450^{\circ}C$ for 1 hr. The photoelectrode of $TiO_2$ nanotube and the counter electrode of $WO_3$ nanoporous layer are assembled and the inner space is filled with a liquid electrolyte containing 0.5 M LiI and 5 mM $I_2$ as a redox mediator. The properties of the photoelectrochromic devices is investigated and Pt-$WO_3$ electrode system shows better electrochromic performance compared to $WO_3$ electrode.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.457-461
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• 2004

The thermomechanically treated $Ti-45.4\%Al-4.8\%Nb(at\%)$ alloy was oxidized between 800 and $1000^{\circ}C$ in air, and the oxidation characteristics were studied. The dissolution of Nb in the oxide scale was observed from the TEM study. The Pt marker test revealed that the oxidation process was controlled by the outward diffusion of Ti ions and the inward diffusion of oxygen ions. During oxidation, the evaporation of Nb-oxides was found to occur to a small amount. Niobium tended to pile-up at the lower part of the oxide scale, which consisted primarily of an outer $TiO_2$ layer, and an intermediate $Al_{2}O_{3}-rich$ layer, and an inner mixed layer of ($TiO_{2}+Al_{2}O_{3}$).