The structural Properties of the Pb$(Zr{_{0.7}}Ti_{0.3})O_3$ Ceramics Thin Films by RF Sputtering method

RF Sputtering method를 이용한 Pb$(Zr{_{0.7}}Ti_{0.3})O_3$ 세라믹스 박막의 구조적 특성

The Pb$(Zr{_{0.7}}Ti_{0.3})O_3$[PZT(70/30)] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering method. The effects of Ar/$O_2$ ratio on the structural and dielectric properties of PZT thin fillms were investigated. In the case of the PZT thin films deposited with condition of 50/50$(Ar/O_2) $ ratio, the grain of the PZT thin films were fine and uniform. Increasing of $O_2$ ratio, the dielectric constant was increased. In this case the dielectirc constant and dielectric loss of PZT thin fims were about 627 and 0.010, respectively.