• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.85-92
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• 2007

With the development of the memory design and process technology, the production of high-density memory has become a large scale industry. Since these memories require complicated designs and accurate manufacturing processes, It is possible to exist more defects. Therefore, in order to analyze the defects, repair them and fix the problems in the manufacturing process, memory repair using BISR(Built-In Self-Repair) circuit is recently focused. This paper presents an efficient memory BISR architecture that uses spare memories effectively. The proposed BISR architecture utilizes the additional storage space named 'sign bit' for the repair of memories. This shows the better performance compared with the previous works.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.55 no.10
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• pp.446-451
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• 2006

In this paper, we propose an implementation of JPEG2000 codec on the ARM9 Processor which includes independent memory management facility. The codec and memory management facility together can control the encoding and the decoding process effectively within available memory area. Embedded appliances like cellular phones have very limited internal memory which can't be expanded easily. However, they should provide various applications and services using restricted memory resources. The proposed codec with memory management can provide image quality that is identical to the original image on embedded platform. The implemented codec has no memory conflict with other applications. It shows that the proposed codec can manage memory resources efficiently.

• Lingua Humanitatis
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• v.1 no.2
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• pp.67-90
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• 2001

In the past few years, a trend has emerged emphasizing the interdisciplinary relationship between cultural and literary studies, and "memory" has been suggested as the central theme in this trend. According to Aleida and Jan Assmann, "memory" as collective memory (not individual recollection) has various functions and forms, of which communicative memory and cultural memory occupy opposite poles of a central axis. Whereas communicative memory relates to the living past shared among contemporaries, cultural memory relates to "recollected history" rather than factual history. Cultural memory finds transmission through symbolic media such as myths, festivities, and literary works. Literary works preserve critical and living memories as opposed to forgotten memories. In other words, literature should be better read as "criticism and memory" than "imitation and preservation." Works of literature are characterized by a turning away from repetition toward representation-the process of "making present" of what is past.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.719-722
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• 1998

Fault simulation for large and complex sequential circuits is highly cpu-intensive task in the intergrated circuit design process. In this paper, we propose CM-SIM, a concurrent fault simulator which employs an optimal memory management strategy and simple list operations. CM-SIM removes inefficiencies and uses new dynamic memory management strategies, using contiguous array memory. Consequently, we got improved performance and reduced memory usage in concurrent fault simulation.

• Journal of the Korean Mathematical Society
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• v.35 no.3
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• pp.741-753
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• 1998

Let G(*) be a Borel function applied to a stationary long memory sequence {X$_{i}$} of standard Gaussian random variables. Focusing on the process {G(X$_{i}$)}, the present paper establishes the almost sure representation for the empirical quantile process, that is, Bahadur's representation, and for the empirical process with respect to sample mean. Statistical applications of the representations are also addressed.sed.

• Journal of the Korean Society of Clothing and Textiles
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• v.44 no.6
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• pp.1154-1162
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• 2020

In this study, the soft textile actuator is produced for a smart wearable with the shape memory effects from linear shape memory alloys of Nickel and Titanium using the driving force through the fabrication process. The measurement model was designed to measure dynamic characteristics. The heating method, and memory shape of the linear shape memory alloy were set to measure the operating temperature. A shape memory alloy at 40.13℃, was used to heat the alloy with a power supply for the selective operation and rapid reaction speed. The required amount of current was obtained by calculating the amount of heat and (considering the prevention of overheating) set to 1.3 A. The fabrication process produced a soft textile actuator using a stitching technique for linear shape memory alloys at 0.5 mm intervals in the general fabric. The dynamic characteristics of linear shape memory alloys and actuators were measured and compared. For manufactured soft textile actuators, up to 0.8 N, twice the force of the single linear shape memory alloy, 0.38 N, and the response time was measured at 50 s.

• The KIPS Transactions:PartD
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• v.18D no.1
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• pp.1-8
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• 2011

The cache structure, which is designed for assuring fast accesses to frequently accessed data, resides on the various levels of computer system hierarchies. Many studies on this cache structure have been conducted and thus many page-replacement algorithms have been proposed. Most of page-replacement algorithms are designed on the basis of heuristic methods by using their own criteria such as how recently pages are accessed and how often they are accessed. This data-retrieval process in computer systems is analogous to human memory retrieval process since the retrieval process of human memory depends on frequency and recency of the retrieval events as well. A recent study regarding human memory cognition revealed that the possibility of the retrieval success and the retrieval latency have a strong correlation with the frequency and recency of the previous retrieval events. In this paper, we propose a novel page-replacement algorithm by utilizing the knowledge from the recent research regarding human memory cognition. Through a set of experiments, we demonstrated that our new method presents better hit-ratio than the LRFU algorithm which has been known as the best performing page-replacement algorithm for DBMS caches.

• Journal of KIISE:Computer Systems and Theory
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• v.37 no.5
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• pp.272-284
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• 2010

Flash Memory differs from the hard disk, because it cannot be overwritten. Most of the flash memory file systems use not-in-place update mechanisms for the update. Flash memory file systems execute sometimes block cleaning process in order to make writable space while performing not-in-place update process. Block cleaning process collects the invalid pages and convert them into the free pages. Block cleaning process is a factor that affects directly on the performance of the flash memory. Thus this paper suggests the efficient page allocation method, which reduces block cleaning cost by minimizing the numbers of block that has valid and invalid pages at a time. The result of the simulation shows an increase in efficiency by reducing more block cleaning costs than the original YAFFS.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.2
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• pp.47-49
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• 2004

Gate protection $SiN_x$ as an alternative to a conventional re-oxidation process in Dynamic Random Access Memory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but also save the thermal budget due to the re-oxidation. The protection $SiN_x$ process is applied to the poly-Si gate, and its device performance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectric integrity show that etch damage-curing capability of protection $SiN_x$ is comparable to the re-oxidation process. In addition, the hot carrier immunity of the $SiN_x$ deposited gate is superior to that of re-oxidation processed gate.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.16-19
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• 2011

The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25 ${\mu}m$ embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.