• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.713-717
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• 2011

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and $0.4\;m{\Omega}cm^2ultra$ low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.266-268
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• 2013

In this paper, we study the channel doping concentration characteristics of junctionless nanowire transistors (JLT) using Edison nanowire FET device simulation. JLT has no junctions by very simple fabrication process. And this device has less variability and better electrical properties than classical inversion-mode transistors with PN junctions at the source and drain. In this simulation we use tri-gate structure. Source and drain doping concentration is $10^{20}atoms/cm^3$. The simulation results show that I-V characteristics of JLT change due to the variation of channel doping concentration.

• Journal of Digital Contents Society
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• v.5 no.1
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• pp.22-27
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• 2004

To handle the high level radioactive materials such a spent fuel, the master-slave manipulaters (MSM) are wide1y used as a remote handling device in nuclear facilities such as the hot cell with sealed and shielded space. In this paper, the Digital Mockup which simulates the remote operation of the Advanced Conditioning Process(ACP) is developed. Also, the workspace and the motion of the slave manipulator, as well as, the remote operation task should be analyzed. The process equipment of ACP and Maintenance/Handling Device are drawn in 3D CAD model using IGRIP. Modeling device of manipulator is assigned with various mobile attributes such as a relative position, kinematics constraints, and a range of mobility. The 3D graphic simulator using the extermal input device of spare ball displays the movement of manipulator. To connect the exterral input device to the graphic simulator, the interface program of external input device with 6 DOF is deigned using the Low Level Tele-operation Interface(LLTI). The experimental result show that the developed simulation system gives much-improved human interface characteristics and shows satisfactory reponse characteristics in terms of synchronization speed. This should be useful for the development of work`s education system in the environment.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.2
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• pp.150-154
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• 2019

In the design of semiconductor integrated circuits, ESD is one of the important issues related to product quality improvement and reliability. In particular, as the process progresses and the thickness of the gate oxide film decreases, ESD is recognized as an important problem of integrated circuit design. Many ESD protection circuits have been studied to solve such ESD problems. In addition, the proposed device can modify the existing SCR structure without adding external circuit to effectively protect the gate oxide of the internal circuit by low trigger voltage, and prevent the undesired latch-up phenomenon in the steady state with high holding voltage. In this paper, SCR-based novel ESD(Electro-Static Discharge) device with the high holding voltage has been proposed. The proposed device has the lower triggering voltage without an external trigger circuitry and the high holding voltage to prevent latch-up phenomenon during the normal condition. Using TCAD simulation results, not only the design factors that influence the holding voltage, but also comparison of conventional ESD protection device(ggNMOS, SCR), are explained. The proposed device was fabricated using 0.35um BCD process and was measured electrical characteristic and robustness. In the result, the proposed device has triggering voltage of 13.1V and holding voltage of 11.4V and HBM 5kV, MM 250V ESD robustness.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.386-386
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• 2012

We studied a bilateral switching device for spin transfer torque (STT-MRAM) based on 3D device simulation. Metal/P/N+or Metal/N/P+ junction device with $30{\times}30nm2$ area which is composed of one side schottky junction at Metal/P/N+ and Metal/N/P+ provides sufficient bidirectional current flow to write data by a drain induced barrier lowering (DIBL). In this work, Junction device confirmed that write current is more than 30 uA at 2 V, It is also has high on-off ratio over 105 under read operation. Junction device has good process feasibility because metal material of junction device could have been replaced by bottom layer of MTJ. Therefore, additional process to fabricate two outer terminals is not need. so, it provides simple fabrication procedures. it is expected that Metal/P/N+ or Metal/N/P+ structure with one side schottky junction will be a promising switch device for beyond 30 nm STT-MRAM.

• Journal of the Korea Society for Simulation
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• v.11 no.3
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• pp.49-58
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• 2002

It takes 2 or 3 months to manufacture memory device. Defect has to exist owing to hundreds of processes. If there are too many defects, the memory has to be rejected. But if there are a few defects, it will be more efficient and cost reducing for the company to use it by repairing. Therefore, laser-repair process is needed for such a reason and redundancy analysis is needed to establish correct target of laser-repair process. The equipment development company had provided the redundancy analysis and each development company had developed and provided separately. So, to analyze the similar type of defects, redundancy analysis time can be very different by the manufacture. The purpose of this research is to strengthen the competitive price and to apply correlation concept in business for reducing the redundancy analysis time to repair the defects

• ETRI Journal
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• v.34 no.6
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• pp.962-965
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• 2012

In this letter, we propose a new RESURF stepped oxide (RSO) process to make a semi-superjunction (semi-SJ) trench double-diffused MOSFET (TDMOS). In this new process, the thick single insulation layer ($SiO_2$) of a conventional device is replaced by a multilayered insulator ($SiO_2/SiN_x/TEOS$) to improve the process and electrical properties. To compare the electrical properties of the conventional RSO TDMOS to those of the proposed TDMOS, that is, the nitride_RSO TDMOS, simulation studies are performed using a TCAD simulator. The nitride_RSO TDMOS has superior properties compared to those of the RSO TDMOS, in terms of drain current and on-resistance, owing to a high nitride permittivity. Moreover, variations in the electrical properties of the nitride_RSO TDMOS are investigated using various devices, pitch sizes, and thicknesses of the insulator. Along with an increase of the device pitch size and the thickness of the insulator, the breakdown voltage slowly improves due to a vertical field plate effect; however, the drain current and on-resistance degenerate, owing to a shrinking of the drift width. The nitride_RSO TDMOS is successfully fabricated, and the blocking voltage and specific on-resistance are 108 V and $1.1m{\Omega}cm^2$, respectively.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.4
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• pp.22-28
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• 2013

It is important to begin left ventricular assist device (LVAD) treatment at appropriate time for heart failure patients who expect cardiac recovery after the therapy. In order to predict the optimal timing of LVAD implantation, we predicted pumping efficacy of LVAD according to the severity of heart failure theoretically. We used LVAD-implanted cardiovascular system model which consist of 8 Windkessel compartments for the simulation study. The time-varying compliance theory was used to simulate ventricular pumping function in the model. The ventricular systolic dysfunction was implemented by increasing the end-systolic ventricular compliance. Using the mathematical model, we predicted cardiac responses such as left ventricular peak pressure, cardiac output, ejection fraction, and stroke work according to the severity of ventricular systolic dysfunction under the treatments of continuous and pulsatile LVAD. Left ventricular peak pressure, which indicates the ventricular loading condition, decreased maximally at the 1st level heart-failure under pulsatile LVAD therapy and 2nd level heart-failure under continuous LVAD therapy. We conclude that optimal timing for pulsatile LVAD treatment is 1st level heart-failure and for continuous LVAD treatment is 2nd level heart-failure when considering LVAD treatment as "bridge to recovery".

• Journal of Korea Multimedia Society
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• v.3 no.4
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• pp.407-415
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• 2000

The ultimate goal of flow control in the semiconductor fabrication process, one of the most equipment-intensive and complex manufacturing process, is to reduce lead time and work in process. In this paper, we propose stand alone layout in the form of job shop using group technology to improve the Productivity and eliminate the inefficiency in FMS (flexible manufacture system). The performance of stand alone layout and in-line layout are analyzed and compared while varying number of device variable chanties. The analysis of in-line layout is obtained by examining its adoption in the memory products of semiconductor factory. The comparison is performed through simulation using ProSys; a window 95 based discrete system simulation software, as a tool for comparing performance of two proposed layouts. The comparison demonstrates that when the number of device variable change is small, in-line layout is more efficient in terms of production Quantity. However, as the number of device variable change is more than 14 times, stand alone layout prevails over in-line layout.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.631-634
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• 2001

In this study, the graphic simulation system of multi joint manipulator is developed to analyze and optimize the remote handling processes for the spent fuel assembly. This system consists of a 3-D graphical modeling system, a device assembling system, and a motion simulation system. To analyze and optimize the processes involved in multi-joint manipulator operation such as NFBC transportation process and bottom nozzle removal process, the virtual work place is implemented using a computer graphic technology. This virtual workcell is exactly same as that of the real environment. This graphic simulation system of the multi-joint manipulator can be effectively used for designing the main processes and maintenance processes of the spent fuel management.