• Korean Journal of Computational Design and Engineering
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• 제14권6호
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• pp.415-423
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• 2009

Because of the fast changing car design and increasing facilities, manufacturing process of cars is getting more complex now a days. Particularly, car manufacturing system that consist of automated devices, applies various simulation techniques to validate device motion and detect collision. To cope with this problem, traditional manufacturing system deployed test-run with the real devices. However, increased computing power in a contemporary manufacturing system changes it into realistic 3D simulation environment. Similarly, managed device data that was generated using 2D traditionally, can be converted to 3D realistic simulation. The existing problem with 3D simulation is disjoint data interaction between different work stations. Consequently, JIGs, fixing the car part accurately, are changed according to fixing position on the part or a part shape properties. In practice, the 3D JIG data has to be managed according to kinematic information, but not of its features. However, generating kinematic information to the 3D model repeatedly according to frequent change in part is not explained in current literatures. To fill this knowledge gap, this paper suggests an improving method of rendering 3D JIG kinematics information to simulation model. Thereafter, it shows the result of implementation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.170-173
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• 2003

In this paper, we proposed a new bulk LDMOS structure which can be used for RF application, and its fabrication steps were introduced. The simulated devices consist of three types: Bulk device, SLB(SOI Like Bulk), and SOI device. As a result of process and device simulation, we showed electrical characteristics, such as threshold voltage, subthreshold slope, DIBL(Drain Induced Barrier Lowering), off-state current, and breakdown voltage. In this simulation study, the lattice temperature model was adopted to see the device characteristics with lattice temperature during the operation. SLB device structure showed the best breakdown characteristics among the other structures. The breakdown voltage of SLB structure is about 9V, that of bulk is 7V, and that of SOI is 8V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.14-17
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• 1992

To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.

• Korean Journal of Computational Design and Engineering
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• 제17권4호
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• pp.274-281
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• 2012

This paper proposed a control simulation method for design and verification of the transport system in an automobile assembly line based on digital manufacturing system. The design of the transport system involves two major activities: mechanical design (device specification) and electrical design (device behavior and system control). Conventionally, the simulation and emulation system of the transport system focuses on the abstract level, which mainly deals with design verification, alternative comparison, and system diagnosis. Although it can provide overall system visibility in monitoring how well it works in the process and view, its simulation models are not sufficiently realistic to be used for a detailed design or for implementation purposes. In this paper, a digital simulation model for a transport system in an automotive assembly line is constructed by adapting a digital manufacturing methodology. We use the concept of the "Virtual Probe", which transport a carrier instead of the belt of the conveyor. In conclusion, the proposed method is valuable in the process of test run in the shop floor. This method would reduce the time and effort for validating the manufacturing system and improve the productivity and integrity of the control program.

• The Magazine of the IEIE
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• 제42권7호
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• pp.45-53
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• 2015

Power 소자 기술은 digital & mixed signal device와 on-chip 구현을 위해서 CMOS 공정에 대한 기본 이해가 필요하다. CMOS 공정 기반 위에 power device 공정을 추가하면서 다양한 operation voltage의 power 소자를 구현하고, passive device 들을 동일 공정에서 구현하여 다양한 components 들로 power IC 제품을 design 할 수 있도록 modular process를 제공하는 것이 중요하다. 또한 power device로 주로 사용되는 LDMOS 소자에 대한 performance 개선을 위해 simulation을 통해 key device parameter들의 특성을 예측하고, 구조를 설계하는 것이 Si process 전에 중요한 일 중의 하나이다. 아울러 power management가 potable power, consumer electronics 및 green energy에서 가장 빠르게 성장하는 분야이므로, 차별화된 power 소자 기술을 확보하여 급변하는 시장 환경에 대응하는 것이 필요하다.

• Journal of the Semiconductor & Display Technology
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• 제8권4호
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• pp.37-42
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• 2009

The performance of an OLED(organic luminescent emitting device) fabrication system strongly depends on the design of the evaporation cell-source. Trends in display sizes have hauled the enlargement of mother glass substrates. The enlargement of substrates requires the improvement and the enlargement of the effusion cell-source for OLED evaporation process. The deposited layers should be as uniform as possible, and therefore it is important to know the effusion profile of the molecules emitted from the cell-source. Conventional 2D DSMC algorithm cannot be used for simulating the new concept cell-source design, such as a linear source. This work concerns the development of 3D DSMC (direct simulation Monte Carlo) analysis for simulating the behavior of the evaporation cell-sources. In this paper, the 3D DSMC algorithm was developed and the film thickness profiles were obtained by the numerical analysis.

• Journal of the Korea Academia-Industrial cooperation Society
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• 제4권3호
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• pp.177-182
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• 2003

In the case of the flash memory, various kinds of transistors and the wide range of operation voltage are necessary to achieve the read/write operations. Therefore, the characteristics of transistors are measured in the silicon for the circuit design, and the test vehicle run must be processed. In this study, an efficient design flow is suggested using TCAD tools. The test vehicle is replaced with well-calibrated TCAD simulation. First, the calibration methodology is introduced and tested for flash memory device. The calibration errors are less than 5% of a full chip operation, which is accepted by the designers. The results of the calibration were used to predict I-V curves and model parameter of the various transistors for the design of flash device.

• Journal of the Semiconductor & Display Technology
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• 제20권3호
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• pp.131-135
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• 2021

Numbers of studies related to optimization of design of organic light emitting diodes(OLED) through machine learning are increasing. We propose the generative method of the image to assess the performance of the device combining with machine learning technique. Principle parameter regarding dark spot growth mechanism of the OLED can be the key factor to determine the long-time performance. Captured images from actual device and randomly generated images at specific time and initial pinhole state are fed into the deep neural network system. The simulation reinforced by the machine learning technique can predict the device parameters accurately and faster. Similarly, the inverse design using multiple layer perceptron(MLP) system can infer the initial degradation factors at manufacturing with given device parameter to feedback the design of manufacturing process.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2007년도 학술대회
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• pp.247-250
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• 2007

There are three main kinds of service standards for 3G(Third-Generation) wireless communication as WCDMA, CDMA2000 and TD-SCDMA(Time Division-Synchronous Code Division Multiple Access). Compare with WCDMA and CDMA2000, TD-SCDMA system has distinguished technical characters. It is a TDD(Time Division Duplexing) based technology and deploys several advanced but in some respects complex technologies such as smart antenna, joint-detection and baton-handoff, etc. Therefore to analyze and design TD-SCDMA wireless network, it needs more efficient and systematic simulation tool. General simulation tool has so many analysis functions including path loss prediction, capacity and coverage analysis. For more suitable for TD-SCDMA, new additional technologies have to be implemented in simulation tool. Especially as the wireless network highly advancing focused on data service, it more needs to research and develop on the reliability of the simulation tool. In this paper, to give the concrete process and skill about how to implement TD-SCDMA simulation tool, we define the kinds of simulation tool and list basic analysis functions available for TD-SCDMA network design at first. And then we explain how to consider the effects of new technologies of TD-SCDMA and give the solutions about theses considerations.

• Transactions of the Korean Society of Machine Tool Engineers
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• 제17권2호
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• pp.45-50
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• 2008

Molecular flows inside a guide block in the OLED(organic luminescent emitting device) deposition process have been simulated using DSMC(direct simulation Monte Carlo) method. Because the organic materials are evaporated under vacuum, molecules flow at a high Knudsen number of the free molecular regime, where the continuum mechanics is not valid. A guide block is designed as a part of the linear cell source to transport the evaporated materials to a deposition chamber, When solving the flows, the inlet boundary condition is proved to affect significantly the whole flow pattern. Thus, it is proposed that the pressure should be specified at the inlet. From the analysis of the density distributions at the nozzle exit of the guide block, it is shown that the longer nozzle can emit molecules more straightly. Finally, a nondimensionalized mass flow profile is obtained by numerical experiments, where various nozzle widths and inlet pressures are tested.