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유연기판 위 형성된 나노-마이크로 Pt 금속선 패턴의 내구성 연구 (Durability of Nano-/micro- Pt Line Patterns Formed on Flexible Substrate)

  • 박태완;최영중;박운익
    • 마이크로전자및패키징학회지
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    • 제25권3호
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    • pp.49-53
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    • 2018
  • 정렬된 미세 패턴을 형성하는 기술은 차세대 전자소자를 제작함에 있어서 기틀이 되는 기반기술이기 때문에, 최근 더욱 미세한 패턴을 구현하기 위하여 많은 노력들이 이루어지고 있다. 그 중, 본 연구에서는 패터닝 공정에 있어서 비용이 저렴하고 단시간 내에 고해상도 미세패턴의 형성이 가능한 장점을 갖는 나노 패턴전사 프린팅 공정을 이용하였다. 투명하고 유연한 기판 위에 250 nm, 500 nm, 그리고 $1{\mu}m$의 선폭을 갖는 Pt 금속 라인 패턴을 성공적으로 형성하였으며, 벤딩기기를 사용하여 500회 벤딩평가 후 패턴의 파괴가 일어나는지에 대한 내구성을 평가하였고, 전자현미경을 통하여 분석하였다. 벤딩 전과 후의 패턴에 대한 손상 여부에 대하여 확인한 결과, 다양한 선폭의 금속 라인 패턴이 초기 상태와 변함없이 형상을 유지할 뿐만 아니라, 패턴주기 또한 안정적으로 유지됨을 확인할 수 있었다. 이러한 결과를 볼 때, 나노 패턴 전사 프린팅 공정은 다양한 금속 패턴을 형성하는데 매우 유용하다고 판단되며, 향후 차세대 유연 전자소자 또는 배선 및 인터커넥션 기술로 응용이 가능할 것으로 기대된다.

High resolution flexible e-paper driven by printed OTFT

  • Hu, Tarng-Shiang;Wang, Yi-Kai;Peng, Yu-Rung;Yang, Tsung-Hua;Chiang, Ko-Yu;Lo, Po-Yuan;Chang, Chih-Hao;Hsu, Hsin-Yun;Chou, Chun-Cheng;Hsieh, Yen-Min;Liu, Chueh-Wen;Hu, Jupiter
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.421-427
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    • 2009
  • We successfully fabricated 4.7-inch organic thin film transistors array with $640{\times}480$ pixels on flexible substrate. All the processes were done by photolithography, spin coating and ink-jet printing. The OTFT-Electrophoretic (EP) pixel structure, based on a top gate OTFT, was fabricated. The mobility, ON/OFF ratio, subthreshold swing and threshold voltage of OTFT on flexible substrate are: 0.01 ^2/V-s, 1.3 V/dec, 10E5 and -3.5 V. After laminated the EP media on OTFT array, a panel of 4.7-inch $640{\times}480$ OTFT-EPD was fabricated. All of process temperature in OTFT-EPD is lower than $150^{\circ}C$. The pixel size in our panel is $150{\mu}m{\times}150{\mu}m$, and the aperture ratio is 50 %. The OTFT channel length and width is 20 um and 200um, respectively. We also used OTFT to drive EP media successfully. The operation voltages that are used on the gate bias are -30 V during the row data selection and the gate bias are 0 V during the row data hold time. The data voltages that are used on the source bias are -20 V, 0 V, and 20 V during display media operation.

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양자점 디스플레이 제작을 위한 양자점 패터닝 기술발전 동향 (Recent Developments in Quantum Dot Patterning Technology for Quantum Dot Display)

  • 진영준;정경준;정재한
    • 한국분말재료학회지
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    • 제31권2호
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    • pp.169-179
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    • 2024
  • 양자점 패터닝 기술은 최근 QLED, 센서, laser, 태양전지, 양자컴퓨터 등을 포함한 광전자 응용분야에서 많은 수요가 예상되고 있다. 최근 양자점 패터닝을 위한 다양한 기술이 등장했지만 여전히 실제 산업에 적용에는 힘든 실정이다. 1~100 ㎛에 걸친 다양한 패턴 크기를 구현할 수 있는 전사프린팅은 대면적화가 어렵고 공정과정 중 발생할 수 있는 양자점 필름의 불완전한 박리 문제로 인한 패터닝 수율 문제가 보고 되고 있다. 기존 반도체 공정을 활용할 수 있는 포토리소그래피를 활용한 양자점 패터닝은 초고해상도로 픽셀을 패터닝 할 수 있다는 장점이 있지만, 포토레지스트를 제거하기 위해 쓰이는 용매에 의해 양자점 패턴 자체가 손상될 수도 있고 오염되어 광 효율이 낮아질 수 있다는 우려가 있다. 포토레지스트를 사용하지 않고 양자점의 용해도를 활용한 직접 광경화 공정이 주목받았지만, 패터닝 과정 중 생기는 결함과 비방사성 재결합으로 인해 양자점의 발광 효율이 떨어진다는 단점이 있어 표면 처리 등의 연구가 더욱 요구된다. 잉크젯 프린팅은 대면적화가 쉽고 상대적으로 경제적이라는 장점이 있으나 패턴의 불균일성과 낮은 해상도의 단점이 있다. 다양한 양자점 패터닝 방법 기술개발을 통해 QLED 소자에만 국한되는 것이 아니라 태양전지, 양자 통신, 양자 컴퓨터 등에도 적용이 기대된다.

비전도성 에폭시를 사용한 RF-MEMS 소자의 웨이퍼 레벨 밀봉 실장 특성 (Wafer Level Hermetic Sealing Characteristics of RF-MEMS Devices using Non-Conductive Epoxy)

  • 박윤권;이덕중;박흥우;송인상;김정우;송기무;이윤희;김철주;주병권
    • 마이크로전자및패키징학회지
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    • 제8권4호
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    • pp.11-15
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    • 2001
  • 본 연구에서는 RF-MEMS소자의 웨이퍼레벨 패키징에 적용하기 위한 밀봉 실장 방법에 대하여 연구를 하였다. 비전도성 B-stage에폭시를 사용하여 밀봉 실장하는 방법은 플립칩 접합 방법과 함께 MEMS 소자 패키징에 많은 장점을 줄 것이다. 특히 소자의 동작뿐만 아니라 기생성분의 양을 줄여야 하는 RF-MEMS 소자에는 더욱더 많은 장전을 보여준다. 비전도성 B-stage 에폭시는 2차 경화가 가능한 것으로 우수한 밀봉 실장 특성을 보였다. 패키징시 상부기관으로 사용되는 유리기판 위에 500 $\mu\textrm{m}$의 밀봉선을 스크린 프린팅 방식으로 패턴닝을 한 후에 $90^{\circ}C$$170^{\circ}C$에서 열처리를 하였다. 2차 경화 후 패턴닝된 모양이 패키징 공정이 끝날 때까지 계속 유지가 되었다. 패턴닝 후 에폭시 놀이가 4인치 웨이퍼에서 $\pm$0.6$\mu\textrm{m}$의 균일성을 얻었으며, 접합강토는 20 MPa을 얻었다. 또한 밀봉실장 특성을 나타내는 leak rate는 $10^{-7}$ cc/sec를 얻었다.

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Electrical Characteristic of IGZO Oxide TFTs with 3 Layer Gate Insulator

  • Lim, Sang Chul;Koo, Jae Bon;Park, Chan Woo;Jung, Soon-Won;Na, Bock Soon;Lee, Sang Seok;Cho, Kyoung Ik;Chu, Hye Yong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.344-344
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    • 2014
  • Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

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Feasibility of Fabricating Variable Density Phantoms Using 3D Printing for Quality Assurance (QA) in Radiotherapy

  • Oh, Se An;Kim, Min Jeong;Kang, Ji Su;Hwang, Hyeon Seok;Kim, Young Jin;Kim, Seong Hoon;Park, Jae Won;Yea, Ji Woon;Kim, Sung Kyu
    • 한국의학물리학회지:의학물리
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    • 제28권3호
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    • pp.106-110
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    • 2017
  • The variable density phantom fabricated with varying the infill values of 3D printer to provide more accurate dose verification of radiation treatments. A total of 20 samples of rectangular shape were fabricated by using the $Finebot^{TM}$ (AnyWorks; Korea) Z420 model ($width{\times}length{\times}height=50mm{\times}50mm{\times}10mm$) varying the infill value from 5% to 100%. The samples were scanned with 1-mm thickness using a Philips Big Bore Brilliance CT Scanner (Philips Medical, Eindhoven, Netherlands). The average Hounsfield Unit (HU) measured by the region of interest (ROI) on the transversal CT images. The average HU and the infill values of the 3D printer measured through the 2D area profile measurement method exhibited a strong linear relationship (adjusted R-square=0.99563) in which the average HU changed from -926.8 to 36.7, while the infill values varied from 5% to 100%. This study showed the feasibility fabricating variable density phantoms using the 3D printer with FDM (Fused Deposition Modeling)-type and PLA (Poly Lactic Acid) materials.

몰드와 전자기파에 의한 PDP격벽의 성형에 관한 연구 (A Study on Plasma Display Panel Barrier Rib Fabrication by Mold and Electromagnetic Wave)

  • 손재혁;임용관;정영대;정성일;정해도
    • 한국정밀공학회지
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    • 제19권6호
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    • pp.176-183
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    • 2002
  • Plasma Display Panel(PDP) is a type of flat panel display utilizing the light emission produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalks from adjacent sub-pixels. The mold for forming the barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing processes such as screen printing, sand-blasting and photosensitive glass methods. The mold for PDP barrier ribs have stripes of micro grooves transferring glass-material wall. In this paper , Stripes of grooves of which width 48$\mu$m, depth 124$\mu$m , pitch 274$\mu$m was acquired by machining of single crystal silicon with dicing saw blade. Maximum roughness of the bottom of the grooves was 59.6 nm Ra in grooving Si. Barrier ribs were farmed with silicone rubber mold, which is transferred from grooved Si forming hard mold. Silicone rubber mold has the elasticity, which enable to accommodate the waviness of lower glass plate of PDP. The methods assisted by the microwave and UV was adopted for reducing the forming time of glass paste.

Comparison of arch form between ethnic Malays and Malaysian Aborigines in Peninsular Malaysia

  • Othman, Siti Adibah;Xinwei, Eunice Soh;Lim, Sheh Yinn;Jamaludin, Marhazlinda;Mohamed, Nor Himazian;Yusof, Zamros Yuzaidi Moh;Shoaib, Lily Azura;Hussein, Nik Noriah Nik
    • 대한치과교정학회지
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    • 제42권1호
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    • pp.47-54
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    • 2012
  • Objective: To determine and compare the frequency distribution of various arch shapes in ethnic Malays and Malaysian Aborigines in Peninsular Malaysia and to investigate the morphological differences of arch form between these two ethnic groups. Methods: We examined 120 ethnic Malay study models (60 maxillary, 60 mandibular) and 129 Malaysian Aboriginal study models (66 maxillary, 63 mandibular). We marked 18 buccal tips and incisor line angles on each model, and digitized them using 2-dimensional coordinate system. Dental arches were classified as square, ovoid, or tapered by printing the scanned images and superimposing Orthoform arch templates on them. Results: The most common maxillary arch shape in both ethnic groups was ovoid, as was the most common mandibular arch shape among ethnic Malay females. The rarest arch shape was square. Chi-square tests, indicated that only the distribution of the mandibular arch shape was significantly different between groups (p = 0.040). However, when compared using independent t-tests, there was no difference in the mean value of arch width between groups. Arch shape distribution was not different between genders of either ethnic group, except for the mandibular arch of ethnic Malays. Conclusions: Ethnic Malays and Malaysian Aborigines have similar dental arch dimensions and shapes.

저온동시소성용 감광성 은(Ag)페이스트의 광식각 특성 (Photolithographic Properties of Photosensitive Ag Paste for Low Temperature Cofiring)

  • Park, Seong-Dae;Kang, Na-Min;Lim, Jin-Kyu;Kim, Dong-Kook;Kang, Nam-Kee;Park, Jong-Chul
    • 한국세라믹학회지
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    • 제41권4호
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    • pp.313-322
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    • 2004
  • 후막 광식각 기술은 스크린 인쇄 등의 일반적인 후막공정에 노광 및 현상 등의 리소그라피 공정을 접목시킨 새로운 기술이다. 본 연구에서는 후막 광식각 기술을 이용하여 미세라인을 형성할 수 있는 저온동시소성용 Ag 페이스트를 개발하였다. 페이스트를 구성하는 Ag분말과 폴리머, 모노머, 광개시제 등의 양을 조절하여 미세라인을 형성할 수 있는 최적 조성을 연구하였으며. 또한 노광량과 같은 공정변수가 미세라인 형성에 미치는 영향을 연구하였다. 실험결과 폴리머/모노머비, Ag 분말 중량비, 광개시제의 양 등이 미세라인의 해상도에 영향을 미치는 주요 인자임을 확인할 수 있었다. 개발된 감광성 Ag 페이스트를 저온동시소성용 그린 시트에 전면 인쇄한 후 건조, 노광, 현상, 적층, 소성 과정을 통하여, 소성 후 20$\mu\textrm{m}$ 이하의 선폭을 가지는 후막 미세라인을 형성할 수 있었다.

Application of Inkjet Technology in Flat Panel Display

  • Ryu, Beyong-Hwan;Choi, Young-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.913-918
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    • 2005
  • It is expected that the inkjet technology offers prospect for reliable and low cost manufacturing of FPD (Flat Panel Display). This inkjet technology also offers a more simplified manufacturing process for various part of the FPD than conventional process. For example, recently the novel manufacturing processes of color filter (C/F) in LCD, or RGB patterning in OLED by inkjet printing method have been developed. This elaborates will be considered as the precious point of manufacturing process for the mass production of enlarged-display panel with a low price. On this point of view, we would like to review the status of inkjet technology in FPD, with some results on forming micro line by inkjet patterning of suspension type silver nano ink as below. We have studied the inkjet patterning of synthesized aqueous silver nano-sol on interface-controlled ITO glass substrate. Furthermore, we designed the conductive ink for direct inkjet patterning on bare ITO glass substrate. The first, the highly concentrated polymeric dispersant-assisted silver nano sol was prepared. The high concentration of batch-synthesized silver nano sol was possible to 40 wt%. At the same time the particle size of silver nanoparticles was below $10{\sim}20nm$. The second, the synthesized silver nano sol was inkjet - patterned on ITO glass substrate. The connectivity and width of fine line depended largely on the wettability of silver nano sol on ITO glass substrate, which was controlled by surfactant. The relationship was understood by wetting angle. The line of silver electrode as fine as $50{\sim}100\;{\mu}m$ was successfully formed on ITO glass substrate. The last, the direct inkjet-patternable silver nano sol on bare ITO glass substrate was designed also.

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