• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.9
• /
• pp.816-820
• /
• 2007

We measured the electron drift velocity, W, in 0.5% $SF_6-Ar$ mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 0.5 Torr by the double shutter drift tube with a variable drift distance, and calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. The measured and calculated values at different gas pressure at each E/N was appreciable dependence in the results on the gas pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.5
• /
• pp.350-354
• /
• 2020

In this study, a pressure sensor for each displacement was fabricated based on the silicon-based pressure sensor obtained through simulation results. Wires were bonded to the pressure sensor, and a piezoresistive pressure sensor was inserted into the printed circuit board (PCB) base by directly connecting a micro-electro-mechanical system (MEMS) sensor and a readout integrated circuit (ROIC) for signal processing. In addition, to prevent exposure, a non-conductive liquid silicone was injected into the sensor and the entire ROIC using a pipette. The packaging proceeded to block from the outside. Performing such packaging, comparing simple contact with strong contact, and confirming that the measured pulse wavelength appears accurately.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.274-274
• /
• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• International Journal of Precision Engineering and Manufacturing
• /
• v.4 no.6
• /
• pp.12-19
• /
• 2003

This paper presents the effect of boundary conditions in various failure pressure models published for the estimation of failure pressure. Furthermore, this approach is extended to the failure prediction with the aid of a failure probability model. The first order Taylor series expansion of the limit state function is used in order to estimate the probability of failure associated with each corrosion defect in buried pipelines for long exposure period with unit of years. A failure probability model based on the von-Mises failure criterion is adapted. The log-normal and standard normal probability functions for varying random variables are adapted. The effects of random variables such as defect depth, pipe diameter, defect length, fluid pressure, corrosion rate, material yield stress, material ultimate tensile strength and pipe thickness on the failure probability of the buried pipelines are systematically investigated for the corrosion pipeline by using an adapted failure probability model and varying failure pressure model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.8
• /
• pp.580-583
• /
• 2012

The dependency of processing pressure on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were deposited by using radio frequency (RF) magnetron sputtering method with different partial pressure. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing pressure during deposition processing. As a result, oxygen vacancies generated in SZTO channel layer with increasing partial pressure resulted in negative shift in $V_{th}$ and increase in on-current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.387-388
• /
• 2008

High temperature micro pressure sensors were fabricated by polycrystalline (poly) 3C-SiC piezoresistors formed by oxidized SOI substrates with APCVD. These have been designed by bulk micromachining below $1{\times}1mm^2$ diaphragm and Si membrane $20{\mu}m$ thick. The pressure sensitivity of fabricated pressure sensor was 0.1 mV/Vbar. The non-linearity of sensor was ${\pm}0.44%$ FS and the hysteresis was 0.61% FS.TCS of pressure sensor was -1867 ppm/$^{\circ}C$, its TCR was -792 ppm/$^{\circ}C$, and TCGF to 5 bar was -1042 ppm/$^{\circ}C$ from 25 to $400^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.4
• /
• pp.426-431
• /
• 2004

We have studied the pressure-dependent liquid crystal's dynamics in a twisted nematic (TN) liquid crystal panel with thin film transistor by applying an external pressure to it. When the external pressure is applied to the panel in a dark state, the disclination lines were generated as a light leakage whereas they did not appear in a simple test cell that has only pixel and common electrodes. It was because the disclination lines were Provoked by the electric field between pixel electrode and data/gate bus line for active matrix driving. Consequently, the external pressure resulted in dynamic instability of the liquid crystal so that the disclination lines at the data/gate bus line intruded into the active area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.395-398
• /
• 2000

Reactive radio frequency (RF)magnetron sputter with incident angle has been used to deposit AlN thin film on a crystalline Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure. Also it has been shown that depostion rate of AIN thin film is affected by fraction Ar and $N_2$ partial pressure. But substrate temperature didn't affect depostion rate of AIN thin film . As sputtering pressure increased preferred orientation degraded. The internal stress changed from tensile stress to compressive stress as fraction of $N_2$ partial pressure increased. At low nitrogen partial pressure cermet$^{[1]}$ AIN thin film is obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.11
• /
• pp.873-877
• /
• 2012

The effect of oxygen pressure in the synthesis of ZnO nanostructures through thermal evaporation of Zn powder was investigated. The thermal evaporation process was carried out in oxygen ambient for 1 hr at $1,000^{\circ}C$ under different pressures. The oxygen pressure was changed in range of 0.5 ~ 900 Torr. Any nanostructure was not formed on the specimens prepared at oxygen pressures lower than 10 Torr. When oxygen pressure was 100 Torr, ZnO nanowires were observed. With increasing the oxygen pressure to 500 Torr, the morphology of ZnO nanostructures changed from wire to tetrapod. For all the samples, room temperature photoluminescence spectra show a strong green emission peak at around 550 nm.

• The Journal of Korea Robotics Society
• /
• v.16 no.1
• /
• pp.23-28
• /
• 2021

The gripper with a soft pneumatic actuator uses a soft material, unlike the gripper that uses a rigid body, so it is safer and lighter to interact with objects without advanced control technology. Among the soft pneumatic actuators that have been studied, PneuNets actuators have bellows shape, which enable quick operation and complete bending with only small material deformation at low pressure. In this study, we suggested improved form of PneuNets actuators to obtain the performance of the soft actuator that a larger bending angle and larger bending force at a small pressure. An experiment was designed and conducted to measure the bending angle and bending force according to the pressure. As a result, it was confirmed through experiments that the improved model has a maximum bending angle at a pressure of 5 kPa lower than that of the previous model, and a maximum bending force of 1.97 times at the same pressure.