Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Pressure Dependency of Electrical Properties of In-free SiZnSnO Thin Film Transistors

공정 압력에 따라 제작되어진 비인듐계 SiZnSnO 박막을 이용한 박막트랜지스터의 성능 연구

  • Lee, Sang-Yeol (Department of Semiconductor Engineering, Cheongju University)
  • 이상렬 (청주대학교 반도체공학과)
  • Received : 2012.05.08
  • Accepted : 2012.07.13
  • Published : 2012.08.01
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Abstract

The dependency of processing pressure on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were deposited by using radio frequency (RF) magnetron sputtering method with different partial pressure. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing pressure during deposition processing. As a result, oxygen vacancies generated in SZTO channel layer with increasing partial pressure resulted in negative shift in $V_{th}$ and increase in on-current.

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References

  1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature, 432, 488 (2004). https://doi.org/10.1038/nature03090
  2. J. Y. Kwon, J. S. Jung, K. S. Son, K. H Lee, J. S. Park, T. S. Kim, J. S. Park, R. Choi, J. K. Jeong, B. W. Koo, and S. Y. Lee, J. Electrochem. Soc., 158, H433 (2011). https://doi.org/10.1149/1.3552700
  3. J. S. Park, T. S. Kim, K. S. Son, K. H. Lee, W. J. Maeng, H. S. Kim, E. S. Kim, K. B. Park, J. B. Seon, W. Choi, M. K. Ryu, and S. Y. Lee, Appl. Phys. Lett., 96, 262109 (2010). https://doi.org/10.1063/1.3435482
  4. S. Y. Lee, Y. W. Song, and S. P. Chang, J. KIEEME, 21, 3 (2008).
  5. J. K. Jeong, Information Display, 10, 42 (2009)
  6. W. F. Wu and B. S. Chiou. Thin Solid Films, 247, 201 (1994). https://doi.org/10.1016/0040-6090(94)90800-1
  7. E. Ziegler, A. Heirich, H. Oppermann, and G. Stover, Phys. Stat. Sol., A66, 635 (1981).
  8. J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, and C. J. Kim, Appl. Phys. Lett., 93, 033513 (2008) https://doi.org/10.1063/1.2963978
  9. J. K. Jeong, H. W. Yang, J. H. Jeong, Y .G. Mo, and H. D. Kim, Appl. Phys. Lett., 93, 123508 (2008). https://doi.org/10.1063/1.2990657
  10. E. C. Chong, K. C. Jo, and S. Y. Lee, Appl. Phys. Lett., 96, 152102 (2010). https://doi.org/10.1063/1.3387819