• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.05a
• /
• pp.84-89
• /
• 1996

The nucleation and growth of microporosities was observed during the course of annealing treatment of sputter-deposited AgInSbTe thin films. There was a close correlation between the density of microporosity and the sputtering gas pressure in annealed thin films. The void density for a given composition decreased with sputtering gas pressure. It was shown from the present study that the number of porosities decreased while the average porosity size increased as the annealing temperature and holding time increased. The mechanism of porosity formation in the sputter-deposited AgInSbTe thin flus containing Ar-impurity trapped from the Ar-plasma is discussed in the present article.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.147-150
• /
• 2003

In this paper, We fabricated a high temperature pressure sensor using SBD(silicon- direct-bonding) wafer of $Si/SiO_2$/Si-sub structure. This sensor was very sensitive because the piezoresistor is fabricated by single crystal silicon of the first layer of SDB wafer. Also, it was possible to operate the sensor at high temperature over $120^{\circ}C$ which is the temperature limitation of general silicon sensor because the piezoresistor was dielectric isolation from silicon substrate using silicon dioxide of the second layer. The sensitivity of this sensor is very high as the measured result of D2200 shows $183.6\;{\mu}V/V{\cdot}kPa$. Also, the output characteristic of linearity was very good. This sensor was available at high temperature as $300^{\circ}C$.

• Magazine of the Korean Society of Agricultural Engineers
• /
• v.45 no.4
• /
• pp.126-136
• /
• 2003

The B value on the saturated soil is commonly known as the amount of 1. Usually this concept is consistent with the condition that effective stress is equal to zero, but it was reported in some literatures that the B value was less than 1 in spite of saturated condition in the test of very stiff material such as rock and quasi-stiff material on which the stiffness can be mobilized because of effective stress not equal to zero. In this study the B value was measured on various effective stress conditions on normally consolidated clay. The test results in the B value less than 1 in spite of perfect saturation. The measured excessive pore water pressure was not only smaller than the change of the total stress, but also the function of time on clay.

• Transactions of Materials Processing
• /
• v.8 no.3
• /
• pp.253-253
• /
• 1999

Dense WC-10 vol.%Co composite was simultaneously synthesized with field-activated and pressure-assisted combustion synthesis (FAPACS) within several minutes in one step from elemental powders of W, C and Co. Combustion synthesis was carried out under the combined effect of an electric field and mechanical pressure. Under the application of 60MPa pressure and 3000A current on the reactants, the relative density of WC-10 vol.%Co composite was 98.4%. The fracture toughness and hardness of WC-10 vol.%Co were 8.6 MPa·$m^{1/2}$ and 1900 kg/mm², respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.5
• /
• pp.396-400
• /
• 2005

Carbon nanotubes (CNTs) have been well known as electron emitters for field emission applications like FEDs. In this work, we propose as new application a vacuum sensor using CNTs and discuss its current-voltage characteristics as a function of vacuum pressure. The proposed sensor, based on electrical discharge theories in air gap well-known as Townsend theory and as Paschen's law, works by figuring out the variation of the dark current and the initial breakdown voltage depending on the vacuum pressure of air which can ionize through collisions with the electrons accelerated by high electric field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.122-125
• /
• 1999

(Ba$_{0.6}$Sr$_{0.4}$)TiO$_3$(BST) thin films were fabricated with different deposition temperature and oxygen pressure by Pulsed Laser Deposition(PLD). Energy Dispersive Spectroscopy(EDS) proved that BST thin films prepared by PLD have almost the same stoichiometric composition as the BST target materials. This BST thin films were fully crystallized at $650^{\circ}C$, 300mTorr oxygen pressure and showed a maximum dielectric constant value of $\varepsilon$$_{t}$=684 and dielectric loss was 0.01 at 75$0^{\circ}C$, 300mTorr oxygen pressure.ssure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.45-48
• /
• 1999

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better underst. DMPC molecules have one phosphatidylcholine head group and two long alkyl groups with carbonyl group. Displacement currents generated during the compression of monolayers of DMPC on the surface of water were investigated. As results, the displacement pick was generated when the area per molecule was about 190$\AA$$^2$in low pressure, and it was generated when the area per molecule about 190$\AA$$^2$ in for pressure, and it was generated when the area per molecule about 150 $\AA$$^2$ in high pressure. Also. for the study of photo device measured the absorption rate. the maxim value shown was 2800-2900nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.677-680
• /
• 1999

Rapid developing automation technology enhances the need of sensors. Among many materials, silicon has the advantages of electrical and mechanical property, Single-crystalline silicon has different piezoresistivity on 야fferent directions and a current leakage at elevated temperature, but poly-crystalline silicon has the possibility of controling resistivity using dopping ions, and operation at high temperature, which is grown on insulating layers. Each wafer has slightly different thicknesses that make difficult to obtain the precisely same thickness of a diaphragm. This paper deals with the fabrication process to make poly-crystalline silicon based pressure sensors which includes diaphragm thickness and wet-etching techniques for each layer. Diaphragms of the same thickness can be fabricated consisting of deposited layers by silicon bulk etching. HF etches silicon nitride, HNO$_3$+HF does poly -crystalline silicon at room temperature very fast. Whereas ethylenediamice based etchant is used to etch silicon at 11$0^{\circ}C$ slowly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.05c
• /
• pp.9-13
• /
• 2004

In this paper, evaluation of physical properties about dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC, DMPC using pressure stimulus. As a result, the changed surface pressure, displacement current and the transition forms of dipole moment of phospolipid monomolecular in area per molecular by pressure stimulus were conformed well. It was known that the monolayers by linear relationship for decision of dielectric relaxation time between compressure speed and molecule area By according to the linear relationship relation get that frictional constant, DLPC was $1.89{\times}10^{-19}$[Js] and DMPC was $0.722{\times}10^{-19}$[Js]. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.11 no.6
• /
• pp.75-81
• /
• 2012

Dissimilar material friction welding such as STD11 and SCM440, we are considering of such things as strength and tenacity of welding interface, which consist of friction welding rotation frequency, friction heating pressure, upset forging-pressure, friction heating time, and upset forging-pressure time. From the study, obtaining the interrelationship between welding condition and quality(toughness, tenacity), we can set the best range of welding condition. while performing acoustic emission examination for the nondestructive evaluation, we can deduce the interrelationship among total acoustic emission counts, friction welding variable, and quality during friction welding, which can solve the manufacturing difficulty and enhance the economic value.