• Journal of the Korean Society for Precision Engineering
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• v.24 no.5
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• pp.118-126
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• 2007

A finite element simulation model was developed for the performance optimization of a closed type air-cell mattress used for the ulcer prevention. An H-model with material properties of human flesh and kinematic joints were used for the calculation of the body contact pressure. The material property of rubber air-cell was evaluated by tensile test of standard specimen. We evaluated the body contact pressure distribution after laying human model on the inflated air-cell mattress. It was found that the body contact pressure was dependent on cell height. but hardly affected by the thickness of the rubber in a cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.456-459
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• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21mV/$V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.379-382
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• 1998

(Ba, Sr)TiO$_3$[BST] thin films were fabricated on Pt/SiO$_2$/Si substrate by RF sputtering technique. The Mic개structure, dielectric and electrical properties of BST thin films were investigated with sputtering pressure. Dielectric constant and dielectric loss of the deposited thin film at sputtering pressure of 5 mTorr were about 91 and 1.9(%), respectively. Increasing sputtering pressure, leakage current was increased. It was found that leakage current of BST thin films was depended on the sputtering pressure.

• Structural Engineering and Mechanics
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• v.43 no.1
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• pp.89-103
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• 2012

In this study, the stability of laminated homogeneous and non-homogeneous orthotropic truncated conical shells with freely supported edges under a uniform hydrostatic pressure is investigated. It is assumed that the composite material is orthotropic and the material properties depend only on the thickness coordinate. The basic relations, the modified Donnell type stability and compatibility equations have been obtained for laminated non-homogeneous orthotropic truncated conical shells. Applying Galerkin method to the foregoing equations, the expression for the critical hydrostatic pressure is obtained. The appropriate formulas for the single-layer and laminated, cylindrical and complete conical shells made of homogeneous and non-homogeneous, orthotropic and isotropic materials are found as a special case. Finally, effects of non-homogeneity, number and ordering of layers and variations of shell characteristics on the critical hydrostatic pressure are investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.9-12
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• 1997

The fabrication and performance of a thin film pressure sensor are described. Cu-Ni thin film strain gauges have been fabricated by RF magnetron sputtering. For all the gauges, the relative chance in resistance ΔR/R with pressure is of the order 10$^{-3}$ for the maximum pressure. The output characteristic is found to be linear over the entire Pressure range (0-30kgf/cm$^2$) and the output sensitivity is 1.6 mV/V. The maximum nonlinearity observed in output characteristics is 0.34%FS for 5V excitation and the hysteresis is less than 0.1%FS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.43-47
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• 2006

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma (ICP). As results at several dependences of 20~100mTorr Xenon pressure, the brightness of discharge tube was higher (4,900 $cd/m^2$) than other conditions when Xe pressure was 20mTorr and RF power was 200W. In that case, the electron temperature and density were 3.58eV and $3.56{\times}10^{12}cm^2$, respectively. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.561-564
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• 2000

Silicon capacitive pressure sensor has been fabricated by using electrochemical etching stop and silicon-to-glass electrostatic bonding technique. A diaphragm structure is designed to compensate the nonlinear response. A cavity is etched into the silicon to the depth of 2$\mu\textrm{m}$ by anisotropic etching in 20wt.% TMAH solution at 80$^{\circ}C$. A fabricated sensor showed 3.3 pF zero-pressure capacitance, 297 pp.m/mmHg sensitivity, and a 7.4 7%F.S. nonlinear response in a 0-1 kgf/cm$^2$pressure range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.617-618
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• 2005

The main purpose of this study is to investigate the effect of gas pressure infiltration on microstructure. Continuous fiber reinforced Al matrix composite wire is produced by gas pressure infiltration process. With the increase of gas pressure, porosity and wettabillity was improved. No chemical reaction product was detected at the interface of $Al_2O_3$ and Al.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.190-193
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• 2022

In this work, the effect of sputtering working pressure for the tellurium film and its thin-film transistor was investigated. The transfer characteristics of tellurium thin-film transistors were improved by increasing the working pressure during sputtering process. As increasing working pressure, physical and optical properties of Te films such as crystallinity, transmittance, and surface roughness were improved. Therefore, the improved transfer characteristics of Te thin-film transistors may originate from both improved interface properties between the silicon oxide gate dielectric layer and the tellurium active layer with an improved quality of Te film. In conclusion, the control of working pressure during sputtering would be important for obtaining high-performance tellurium-based thin film transistor

• Steel and Composite Structures
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• v.51 no.2
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• pp.139-151
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• 2024

In this research, a semi-analytical solution is presented for computing mechanical displacements and thermal stresses in rotating thick cylindrical pressure vessels made of functionally graded material (FGM). The modulus of elasticity, linear thermal expansion coefficient, and density of the cylinder are assumed to change along the axial direction as a power-law function. It is also assumed that Poisson's ratio and thermal conductivity are constant. This cylinder was subjected to non-uniform internal pressure and thermal loading. Thermal loading varies in two directions. The governing equations are derived by the first-order shear deformation theory (FSDT). Using the multilayer method, a functionally graded (FG) cylinder with variable thickness is divided into n homogenous disks, and n sets of differential equations are obtained. Applying the boundary conditions and continuity conditions between the layers, the solution of this set of equations is obtained. To the best of the researchers' knowledge, in the literature, there is no study carried out bi-directional thermoelastic analysis of clamped-clamped rotating FGM thick-walled cylindrical pressure vessels under variable pressure in the longitudinal direction.