• 한국재료학회지
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• 제17권1호
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• pp.1-5
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• 2007

GaN thin fan were grown by spin coated colloidal GaOOH precursor. Polycrystalline GaNs with crystalline size of $10{\sim}100nm$ were grown on $SiO_2$ substrate. The shape of crystallite above $900^{\circ}C$ had the hexagonal plate and column type. X-ray diffraction patterns for them correspond to those of the hexagonal wurtzite GaN. With increasing droplets. i.e, thickness of deposited layers, XRD intensity increased. PL (photoluminescence) spectrum consisted with an weak near band-edge emission at 3.45 eV and a broad donor-acceptor emission band at 3.32 eV. From the low temperature PL measurement on GaN grown at $800^{\circ}C$ that the shallow donor-acceptor recombination induced emission was more intense than the near band-edge excitonic emission.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.222-227
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• 2010

ZnO nanorods array have been grown on the seed crystal coated Si(100) substrate by hydrothermal method. The growth, structural and optical properties of ZnO nanorods array were investigated with a variation of precursor concentration from 0.01 M to 0.04 M. The array density of grown ZnO nanorods per same area was increased with increasing the concentration of precursor solution. Vertically aligned ZnO nanorods with hexagonal wurtzite structure have highly preferred c-axis orientation along (002) lattice plane. Especially, ZnO nanorods array developed from 0.04 M precursor solution showed a diameter of about 85 nm and length of 1.2 {\mu}m$ without any crystallographic defects. The photoluminescence spectra of ZnO nanorods from heavier precursor concentration exhibited stronger UV emission around 380 nm corresponding with near-band-edge emission.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.582-584
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• 2004

The light-emitting properties of poly(2-triethylgermyl-1,4-phenylenevinylene) (TEG-PPV) are compared with those of the silyl-substituted PPV homologue, poly(2-trimethylsilyl-1,4phenylenevinylene) (TMS-PPV). The precursor polymer is solution-processable. After carrying out thermal elimination on the precursor polymer film, the resulting fully conjugated polymer film was found to exhibit high thermal stability in air, and absorption that is shifted to the longer wavelength region owing to the extension of the n-conjugated system. TEG-PPV exhibits efficient green light emission; the maximum PL emission of a TEG-PPV thin film was found to be at 515 nm. The HOMO and LUMO energy levels were also determined using photo-emission spectroscopy. The performance of the TEG-PPV EL device was found to be comparable to that of the TMS-PPV device.

• 한국진공학회지
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• 제19권6호
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• pp.483-488
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• 2010

스핀코팅 방법을 이용하여 다양한 농도의 전구체로 ZnO 나노 섬유질 박막(ZnO nano-fibrous thin films)을 성장하였고, 그에 따른 표면 및 광학적 특성 변화를 scanning electron microscopy (SEM)와 photoluminescence (PL)을 이용하여 측정하였다. 전구체 농도가 0.4 mol (M) 이하 일 때는 성장률이 낮아 ZnO 핵생성만이 되었고, 0.6 M 이상일 때 ZnO 박막은 나노섬유질 구조가 되었다. 전구체 농도가 더욱 증가함에 따라 ZnO 나노 섬유질의 굵기가 굵어졌고 ZnO 박막의 두께도 단계적으로 두꺼워졌다. 전구체 농도가 증가함에 따라 ZnO 나노 섬유질 박막의 photoluminescence (PL)의 근밴드가장자리 광방출(near-band-edge emission) 피크 세기와 full-width at half-maximu (FWHM)이 증가하였고, 깊은 준위 광방출(deep-level mission) 피크는 적색편이(red-shift)하였다.

• Bulletin of the Korean Chemical Society
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• 제16권11호
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• pp.1089-1093
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• 1995

The p-xylyl radical has been produced in a jet from the precursor p-xylene with a corona excited supersonic expansion. Rotationally cooled vibronic emission spectra in the transition of 12A2→12B2 of the p-xylyl radical have been recorded using a Fourier transform spectrometer. The spectra were analyzed on the basis of the known vibrational frequencies and the bandshapes given by the rotational selection rules.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.114-118
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• 2009

A new Zn/O single source precursor, TMEDA-Zn$(eacac)_2$, has been synthesized by using N, N, N’, N’-tetramethylethylendiamine (TMEDA), sodium ethyl-acetoacetate, and $ZnCl_2$. From this organometallic precursor, ZnO thin films have been successfully grown on Si (100) substrates through the metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions in the temperature range of 390~430 ${^{\circ}C}$. The synthesized ZnO films have been found to possess average grain sizes of about 70 nm with an orientation along the c-axis. The precursor and ZnO films are characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, EI-FAB-spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

• Bulletin of the Korean Chemical Society
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• 제32권6호
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• pp.1993-1996
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• 2011

The vibronically well-resolved emission spectrum was recorded from the corona discharge of precursor 2,3,4-trifluorotoluene in a corona excited supersonic expansion with a pinhole-type glass nozzle using a long-path monochromator in the visible region. From the analysis of the observed spectrum, we found the evidence of the presence of the difluorobenzyl radicals in the corona discharge of the precursor. A possible mechanism is proposed for the formation of difluorobenzyl radicals in the gas phase on the basis of the observed emission intensity of the difluorobenzyl radicals produced.

• Current Photovoltaic Research
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• 제1권2호
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• pp.115-121
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• 2013

ZnO film has been used for CIGS solar cells as a buffer layer as itself or by doping Mg and Sn; ZnO film also has been used as a transparent conducting layer by doping Al or B for solar cells. Since ZnO itself is a host material for many applications it is necessary to understand the electrical and optical properties of ZnO film itself with various preparation conditions. We prepared ZnO films by converting ZnS precursor into ZnO film by thermal annealing. ZnO film was formed at low temperature as low as $500^{\circ}C$ by annealing a ZnS precursor layer in air. In the air annealing, the electrical resistivity decreased monotonically with increasing annealing temperature; the intensity of the green photoluminescence at 505 nm increased up to $750^{\circ}C$ annealing. The electrical resistivity further decreased and the intensity of green emission also increased in reducing atmospheres. The results suggest that deep-level defects originated by oxygen vacancy enhanced green emission, which reduce light transmittance and enhance the recombination of electrons in conduction band and holes in valence. More oxidizing environment is necessary to obtain defect-free ZnO film for higher transparency.

• 마이크로전자및패키징학회지
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• 제20권1호
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• pp.33-37
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• 2013

전구체의 농도가 ZnO 나노로드의 성장에 미치는 영향에 대하여 알아보았다. ZnO 나노로드는 수열합성법에 의하여 c-plane 사파이어 상에서 성장되었으며, 전구체 농도가 0.01M에서 0.025M로 증가할 때의 형태적, 구조적, 광학적 성질의 변화에 대하여 주사전자현미경, X-선 회절분석기, 그리고 Photoluminescence(PL) 분석을 통하여 알아보았다. 전구체의 몰 분율이 증가함에 따라서 나노로드의 두께와 길이가 모두 증가하는 경향을 보였으며, 성장 방향은 모두 c-axis 방향임을 알 수 있었다. PL 측정에서의 380 nm파장의 강한 emission으로부터, 수열합성법에 의하여 성장된 ZnO 나노로드는 결함의 영향이 적고 양호하게 성장되어 있음을 확인할 수 있었다.

• 전기학회논문지
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• 제65권11호
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• pp.1835-1839
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• 2016

In this study, ZnO nanorods were grown by a hydrothermal method. $SiO_2/Si$ wafers and glass were used as substrates. ~20 nm-thick ZnO thin films were rf magnetron sputtered for seed layers. The precursor was prepared by mixing zinc nitrate hexahydrate and hexamethylenetetramine (hexamine) in DI water. The concentration of zinc nitrate hexahydrate was fixed at 0.05 mol, and that of hexamine was varied between 0 mol to 0.1 mol. The reactor containing substrates and precursor was put in an oven maintained at $90^{\circ}C$ for 1 h. X-ray diffraction was carried out to analyze the crystallinity of ZnO nanorods, and a field emission scanning electron microscope was employed to observe the morphology of nanorods. Transmittance and absorbance were measured by a UV-Vis spectrophotometer. Photoluminescence measurements were conducted using 266 nm light.