• Journal of Biosystems Engineering
• /
• v.33 no.4
• /
• pp.230-238
• /
• 2008

Mechanization such as machine harvesting, precleaning, drying and cleaning for rapeseed harvested with high moisture content should be accomplished for biodiesel production. In addition, machine drying and cleaning is inevitable in the mechanization of work, just because rice should be transplanted right after harvesting rapeseed in Korea. Particularly, early harvested rapeseed with the combine have high moisture content and undesirable materials such as stalks and stones which make drying-process difficult and lower the efficiency of drying. Therefore, this study was conducted to develop precleaner and cleaner which could remove foreign substances from harvested rapeseeds. The precleaner consists of throw-in hopper, conveyor, feeding hopper, two precleaning sieves and discharging sections. Precleaning capacity was 1,505 kg/hr in shaking frequency of 370 cpm (cycles per minute) and tilt angles of between $5^{\circ}$ and $7^{\circ}$. The efficiency of precleaning was between 90.9% and 91.5%. The cleaner consists of feeding, shaking, blowing, cleaning and discharging sections. Cleaning performance was 435.4kg/hr in the number of rocking motions of 475 cpm and tilt angle of $10^{\circ}$. The ratios of cleaning, foreign substances and loss were 96.5%, 3.5% and 0.2%, respectively.

• Journal of the Korean Vacuum Society
• /
• v.4 no.S1
• /
• pp.81-86
• /
• 1995

Aluminum has been deposited selectively on TiN surfaces in the presence of Si, SiO2 from Dimethyethylamine Alane(DMEAA). The film properties of the deopsited AI film were determined by various methods(SEM, Auger, UV-photospectrometer, Four point-probe, XRD). The effect of in-situ H2 plasma precleaning was studied. The effect of gap distance, pressure and temperature on the properties(crystallinity, resistance, grain size, morphology) of AI film and on the growth rates was investigated. It was found that the plasma precleaning promotes the growth rate and there exists optimum thmperature for maximum growth rate.

• Journal of the Korean Vacuum Society
• /
• v.2 no.4
• /
• pp.480-485
• /
• 1993

Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

• Journal of the Korean Vacuum Society
• /
• v.1 no.1
• /
• pp.1-10
• /
• 1992

Three chemical precleaning methods-degreasing, electropolishing and acidic etching-suitable for stainless steel vacuum chamber have been studied and compared. The techniques used in evaluating and comparing the three treatments include Auger analysis and the measurement of the outgassing rate. The obtained outgassing rates (N2 equivalent) are 1.1 $\times$ 10-10torr l/s cm2 and 3.9 $\times$ 10-11torr l/s cm2 for degreasing electropolishing, and etching method, respectively, after 48 hours from the initial pumpdown at room temperature. A simple model is introduced to analyze the pumpdown curve. Some surface parameters, such as surface coverage, mean residence time, and desorption energy, are calculated from corresponding equations derived from this model.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.7 no.4
• /
• pp.833-837
• /
• 2012

This paper proposes a DRAM data retention time enhancement method that minimizes silicon loss and undercut at STI sidewall by reducing the SC1 (Standard Cleaning) time. SC1 time optimization debilitates the parasitic electric field in STI's top corner, which reduces an inverse narrow width effect to result in reduction of channel doping density without increasing the subthreshold leakage of cell Tr. Moreover, it minimizes the electric field in depletion area from cell junction to P-well, increasing yield or data retention time.

• Korean Journal of Materials Research
• /
• v.6 no.7
• /
• pp.692-699
• /
• 1996

nptype Si(100)웨이퍼를 precleaning하고 HF 용액에 dip etching한 후 E-beam dvaporator에 장착하여 Co 단일막($170\AA$, $340\AA$)과 Co/Ti 이중막($200\AA$/ $(50-100)\AA$)을 성장시켰다. 시편의 RTA 과정에서는 N2분위기에서 direct annealing 방식으로 열처리 온도와 시간을 변화시켜가며 Co-silicidation 공정을 수행하였다. Co 단일막으로 형성된 Co-실리사이드의 면저항은 $500^{\circ}C\leq$T$\leq$$850^{\circ}C$범위에서 열처리 온도와 시간의 변화에 관계없이 거의 일정한 값을 나타내었다. Co/Ti 이중막의 경우 Co-실리사이드의 형성온도가 Co 단일막의 경우에 비해 높게 나타나고 낮은 비저항의 CoSi2를 얻기 위해서는 $800^{\circ}C$이상의 온도로 열처리해야 함을 알 수 있었다. XRD 분석결과, Co 단일막으로부터 얻어진 CoSi2는 (111) 및 (220) 결정상을 나타내었으나, Co/Ti 이중막에 의한 CoSi2는 (200)결정상만이 나타나서 Si(100)기판과 에피층을 이루고 있음을 알 수 있었다. 본 실험에서 CoSi2의 비저항은 약 $18\mu$$\Omega$.cm로 나타났으며, TEM 및 AES 분석으로부터 Co/Ti bilayer-실리사이드가 다량의 Si과 Ti 외에 소량의 Co가 섞여있는 표면 복합층과, Si과 Co만이 존재하는 내부 에피층으로 구성됨을 확인하였다.

• Korean Journal of Materials Research
• /
• v.11 no.5
• /
• pp.361-366
• /
• 2001

It is difficult to obtain high Cu nucleation density and continuous Cu films in Cu-MOCVD without cleaning the TiN substrate prior to Cu deposition. In this study effects of plasma precleaning on the Cu nucleation density were investigated using SEM, XPS, AES, AFM analyses. Direct plasma pretreatment is much more effective than remote plasma pretreatment in enhancing Cu nucleation. Cleaning effects are enhanced with increasing the rf-power and the plasma exposure time in hydrogen plasma pretreatment. The mechanism through which Cu nucleation is enhanced by plasma pretreatment is as follows: Hydrogen ion\ulcorner in the hydrogen plasma react with TiN to form Ti and $NH_3$ Cu nucleation is easier on the Ti substrate than TiN substrate.

• Resources Recycling
• /
• v.16 no.5
• /
• pp.71-76
• /
• 2007

The mixed plastic waste generated from households after hand-picking and/or mechanical sorting processes amounts to 1,750,000 ton in 2006, and most of these waste are finally end up with landfill and/or incineration due to the lacks of separation technologies and economical reasons. The mixed plastic wastes can not be used as raw materials for chemical and/or thermal recycling processes because of their high content of PVC(upto 4.0 wt.%). In the present research, gravity separation system has been developed to remove PVC from the mixed plastic waste and to recover the PO-type plastics. This system mainly consists of air classification, magnetic separation, one-step crushing, feeding system at fixed rate and wet-type gravity separation system. The gravity system based on centrifugal separation has been developed at capacity of 0.5 ton/h and it consists of mixing, precleaning, separation, dewatering, recovery system and wastewater treatment system, etc. The main objective of this process is to achieve high separation efficiency of polyolefins with less than 0.3 wt.% PVC content and less than 10% moisture content in the final products. In addition, a crushing unit of with 8 rotor system is also developed to improve the crushing efficiency of soft-type plastics. The system with a capacity of 1.0 ton/h is developed and operational results are presented.