• Title/Summary/Keyword: Power amplifiers

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Design of Power Line Communication Protocol using Polling Concept (Polling을 이용한 전력선 통신(PLC) 프로토콜의 설계)

  • Lim, Eun-Jeong;Kang, Cheoul-Shin
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.31-34
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    • 2005
  • In this paper, we proposed a MAC protocol which can be used in power line communications(PLC). In the power line communication network, the data signal cannot travel long distance because of a serious attenuation. Consequently, we need to have a number of repeaters (amplifiers) in order to recover the signal power, which causes flooding problem in the network The proposed MAC protocol uses polling concept and solves the flooding problem in the power line communication network. The proposed protocol can be applied to power line communication networks for automatic power distribution control system. A mathematical analysis has been carried out to estimate the performance of the proposed protocol.

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Class-E CMOS PAs for GSM Applications

  • Lee, Hong-Tak;Lee, Yu-Mi;Park, Chang-Kun;Hong, Song-Cheol
    • Journal of electromagnetic engineering and science
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    • v.9 no.1
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    • pp.32-37
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    • 2009
  • Various Class-E CMOS power amplifiers for GSM applications are presented. A stage-convertible transformer for a dual mode power amplifier is proposed to increase efficiency in the low-output power region. An integrated passive device(IPD) process is used to reduce combiner losses. A split secondary 1:2 transformer with IPD process is designed to obtain efficient and symmetric power combining. A quasi-four-pair structure of CMOS PA is also proposed to overcome the complexities of power combining.

Modeling of Memory Effects in Power Amplifiers Using Advanced Three-Box Model with Memory Polynomial (전력 증폭기의 메모리 효과 모델링을 위한 메모리 다항식을 이용한 향상된 Three-Box 모델)

  • Ku Hyun-Chul;Lee Kang-Yoon;Hur Jeong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.5 s.108
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    • pp.408-415
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    • 2006
  • This paper suggests an improved system-level model of RF power amplifiers(PAs) including memory effects, and validates the suggested model by analyzing the power spectral density of the output signal with a predistortion linearizer. The original three-box(Wiener-Hammerstein) model uses input and output filters to capture RF frequency response of PAs. The adjacent spectral regrowth that occurs in three-box model can be perfectly removed by Hammerstein structure predistorter. However, the predistorter based on Hammerstein structure achieves limited performance in real PA applications due to other memory effects except RF frequency response. The spectrum of the output signal can be predicted accurately using the suggested model that changes a memoryless block in a three-box model with a memory polynomial. The proposed model accurately predicts the output spectrum density of PA with Hammerstein structure predistorter with less than 2 dB errors over ${\pm}30$ MHz adjacent channel ranges for IEEE 802.11 g WLAN signal.

A Study on PAPR reduction in OFDM WPAN system using Millimeter Wave (Millimeter Wave를 이용하는 OFDM WPAN 시스템에서 PAPR 감소에 관한연구)

  • Kim, Wan-Tae;Yoo, Sun-Yong;Cho, Sung-Joon
    • Journal of Advanced Navigation Technology
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    • v.12 no.2
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    • pp.139-145
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    • 2008
  • There has been lots of studies on communication systems using millimeter wave recently in many countries, specially in newly assigned 57GHz ~ 64GHz ISM band. Among those studies, IEEE 802.15.3c standard proposes OFDM (Orthogonal Frequency Division Multiplexing) systems for high data rate transmission support. But OFDM method has the PAPR (peak-to-Average Power Radio) problem The PAPR problem is to decline the performance of the transmission system due to signals distorted severely when passing through nonlinear components such as ADC/DAC and power amplifiers. In order to solve the problem of P APR, this paper suggests SSC (Sine Soft Clipping) and analyzes the PAPR, CCDF, PSD, BER by applying SAW(Surface Acoustic Wave) filter and power amplifiers to IEEE 802.15.3.c OFDM WPAN systems.

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A Review of SiC Static Induction Transistor (SIT) Development for High-Frequency Power Amplifiers

  • Sung, Y.M.;Casady, J.B.;Dufrene, J.B.
    • KIEE International Transactions on Electrophysics and Applications
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    • v.11C no.4
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    • pp.99-106
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    • 2001
  • An overview of Silicon Carbide (SiC) Static Induction Transistor (SIT) development is presented. Basic conduction mechanisms are introduced and discussed, including ohmic, exponential, and space charge limited conduction (SCLC) mechanisms. Additionally, the impact of velocity saturation and temperature effects on SCLC are reviewed. The small-signal model, breakdown voltage, power density, and different gate structures are also discussed, before a final review of published SiC SIT results. Published S-band (3-4 GHz) results include 9.5 dB of gain and output power of 120 W, and L-band (1.3 GHz) results include 400 W output power, 7.7 dB of gain, and power density of 16.7 W/cm.

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Intergrated circuit design of power-stabilizing circuitry for optical transmitter (광송신기용 광파워 안정화 회로의 집적회로 설계)

  • 이성철;박기현;정행근
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.33B no.3
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    • pp.47-55
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    • 1996
  • An optical transmitter, which is a key component of the optical transmission system, converts the electrical signal to optical signal and consists of a high-speed current-pulse driver for laser diode and low-speed feedback loops that stabilize optical power against aging, power supply voltage fluctuations, and ambient temperature changes. In this paper, the power-stabilizing part, which forms the bulk of the optical transmitter circuitry was designed in integrted circuits. Operational amplifiers and reference voltage generation circuits, which were identified as key building blocks for the power-stabilizing feedback loops, were designed and were subsequently verified through HSPICE simulations. The designed operational amplifier consists of a two-stage folded cascode amplifier and class AB output stage, whereas the reference voltage is obtained by bandgap reference circuits. Finally the power-stabilizing circuitry was laid out based on 3\mu$m CMOS design rules for fabrication.

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A implementation of predistorter using the Series Diode Linearizer for RF Amplifiers (RF전력증폭기에 직렬다이오드선형화기를 이용한 전치보상기 구현)

  • Won, Yong-Kyu;Yun, Man-Soo;Lee, Sang-Cheol;Chung, Chan-Soo
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.52 no.1
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    • pp.28-34
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    • 2003
  • In this paper, a predistortion linearizer using series diode is proposed for linearizing the power amplifier in microwave radio systems. The power amplifier should be operated near saturation region to achieve high efficiency. But at this region, amplitude and phase distortions of the amplifier remarkably increase with the increase of input power and cause a significant adjacent channel interference. The linearizer is composed of a series diode with a parallel capacitor, which provides positive amplitude and negative phase deviations with the increasing input power. This type of linearizer using the nonlinearity of diode has improved the C/I(Carrier to Intermodulation Distortion) ratio well. By applying this linearizer to two-tone 880MHz power amplifier, adjacent channel leakage power is improved up to 5dBm.

Design method of stable RF power amplifiers using 3dB coupled line (3dB coupled line을 이용한 안정한 RF전력증폭기 설계방법)

  • 김선욱;강원태;강충구;장익수
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.10
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    • pp.24-31
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    • 1997
  • A new design method of stable RF power amplifier using 3dB coupled line is proposed in this thiesis. The proposed method of broadband matching consist of resistive matching circuits at low frequency and lossless matching circuits at microwave band. This design method increase the stability of an amplifier and is suitable for interstage matching. When high power amplifier is designed using this method for PCS base transceiver station, the measured resutls show thst the gain of 18.5dB, and 9W (39.5dBm) output power. We use motorola's MRF6401 for medium power and MRF 6402 for large power and cascaded them.

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A Linear Power Amplifier Design Using an Analog Feedforward Method

  • Park, Ung-Hee;Noh, Haeng-Sook
    • ETRI Journal
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    • v.29 no.4
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    • pp.536-538
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    • 2007
  • We propose and describe the fabrication of a linear power amplifier (LPA) using a new analog feedforward method for the IMT-2000 frequency band (2,110-2,170 MHz). The proposed analog feedforward circuit, which operates without a pilot tone or a microprocessor, is a small and simple structure. When the output power of the fabricated LPA is about 44 dBm for a two-tone input signal in the IMT-2000 frequency band, the magnitude of the intermodulation signals is below -60 dBc and the power efficiency is about 7%. In comparison to the fabricated main amplifier, the magnitude of the third intermodulation signal decreases over 24 dB in the IMT-2000 frequency band.

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Design of RF CMOS Power Amplifier for 2.4GHz ISM Band (2.4GHz ISM 밴드용 고주파 CMOS 전력 증폭기 설계)

  • Hwang, Young-Seung;Cho, Yeon-Su;Jung, Woong
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.113-117
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    • 2003
  • This paper describes the design and the simulation results of the RF CMOS Class-E Power Amplifier for a 2.4GHz ISM band. This circuit is composed two connected amplifiers. where Class F amplifier drives Class E amplifier. The proposed circuit can reduce the total power dissipation of the driving stage and can work with higher efficiency. The power amplifier has been implemented in a standard $0.25{\mu}m$ CMOS technology and is shown to deliver 100mW output power to load with 41% power added efficiency(PAE) from a 2.5V supply.

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