• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.12
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• pp.2674-2685
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• 1997

In this paper, the design and imprlementation of dual-band power amplifier which is used as a critical part for mobile phone to be simultaneously working at a dual band, 800MHz CDAM and PCS frequency band is described. DC operating point of power FET is limited to Class-B to enable long talk time considering that the tyupical power range of CDMA phones in working is around 10 to Class-B to enable long talk time considering that the typical power range of CDMA phones in working is around 10 to 15dBm, i.e., liner range. The power amplifier which employs two GaAs FETs with good linerity at a low operating point has duplexer cuplexer circuit to separate two frequency bands at input and output stage. Electromagnetic analysis for via holes and coupling between narrow transmission lines is included to design a circuit. Moduld size of 0.96CC($22{\times}14.5{\times}3mm^3$) and maximum module current of 130mA at output power range, 10 to 15dBm are attained. The power amplifer module has achieved ACPR performance with 2 to 3dB marging from IS-95 requirement at output powers, 23.5dBm for PCS and 28dBm for 800MHz CDMA respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.1020-1027
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• 2005

In this paper, economic miniature RF transmitter module for intelligent transportation system(ITS) is described. This module which consists of ASK modulator, frequency synthesizer, power amplifier is operating at 5.8 GHz frequency band and implemented by using LTCC process technique. Thus, ultra small size of 0.8 CC and improved electrical performances has been obtained. From the test results, transmitting characteristics of 10 dBm ouput power and -46 dBc interchannel interference with 1.024 Mbps ASK modulated have been shown. Frequency synthesizer as a transmitting signal source reveals very short locking time of 26 usec and outstanding phase noise of -115 dBc/Hz at 1 MHz offset from 5.8 GHz center frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.11
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• pp.1239-1247
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• 2012

In this paper, design and fabrication of solid state power amplifier(SSPA) using GaN HEMT chip for X-band frequency are presented. The SSPA consists of the power supply for stable power and the control unit for communication and controlling the internal module, the RF Part to amplify RF signal, In particular the adopted active device for the RF Parts is GaN HEMT Bare chip of TriQuint company, the RF parts consists of pre-stage, drive-stage, main power-stage and each amplifier is designed with input and out matching circuit. The developed power amplifier demonstrated more than 300 W peak output power in condition of 26 % duty, max. pulse width 100us for the X-band frequency( 500 MHz bandwidth) and can apply to marine radar systems.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.2
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• pp.104-111
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• 2008

The ECG is biomedical electrical signal occurring on the surface of the body due to the contraction and relaxation of the heart. This signal represents an extremely important measure for health monitoring, as it provides vital information about a patient's cardiac condition and general health. ECG signals are contaminated with high frequency noise such as power line interference, muscle artifact and low frequency nose such as motion artifact. But it is difficult to filter nose from ECG signal, and errors resulting from filtering can distort a ECG signal. The present study implemented a small-size and low-power ECG measurement system that can remove motion artifact for convenient health monitoring during daily life. The implemented ECG monitoring system consists of ECG amplifier, a low power microprocessor, bluetooth module and monitoring program. Amplifier was designed and implemented using low power instrumentation amplifier, and microprocessor was interfaced to the ECG amplifier to collect the data, process, store and feed to a transmitter. And bluetooth module used to wirelessly transmit and receive the vital sign data from the microprocessor to an PC at the receiving site. In order to evaluate the performance of the implemented system, we assessed motion artifact rejection performance in each situation with artificially set condition using adaptive filter.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.1-7
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• 2021

In this paper, by embedding a bare-die chip-type drive amplifier into the PCB composed of ABF and FR-4, it implements an embedded active device that can be applied in 28 GHz band modules. The ABF has a dielectric constant of 3.2 and a dielectric loss of 0.016. The FR-4 where the drive amplifier is embedded has a dielectric constant of 3.5 and a dielectric loss of 0.02. The proposed embedded module is processed into two structures, and S-parameter properties are confirmed with measurements. The two process structures are an embedding structure of face-up and an embedding structure of face-down. The fabricated module is measured on a designed test board using Taconic's TLY-5A(dielectric constant : 2.17, dielectric loss : 0.0002). The PCB which embedded into the face-down expected better gain performance due to shorter interconnection-line from the RF pad of the Bear-die chip to the pattern of formed layer. But it is verified that the ground at the bottom of the bear-die chip is grounded Through via, resulting in an oscillation. On the other hand, the face-up structure has a stable gain characteristic of more than 10 dB from 25 GHz to 30 GHz, with a gain of 12.32 dB at the center frequency of 28 GHz. The output characteristics of module embedded into the face-up structure are measured using signal generator and spectrum analyzer. When the input power (P_in) of the signal generator was applied from -10 dBm to 20 dBm, the gain compression point (P_1dB) of the embedded module was 20.38 dB. Ultimately, the bare-die chip used in this paper was verified through measurement that the oscillation is improved according to the grounding methods when embedding in a PCB. Thus, the module embedded into the face-up structure will be able to be properly used for communication modules in millimeter wave bands.

• Proceedings of the Korea Contents Association Conference
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• 2016.05a
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• pp.327-328
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• 2016

전력 증폭기 모듈 패키지 산업은 전방산업의 경기에 매우 큰 영향을 받고 종속성이 높은 산업이므로 수요처인 중계기, 기지국, 무선네트워크 구축 장비 업체의 수급 동향, 기술변화, 경영환경변화, 판매실적 등에 민감하게 반응하는 수요구조로 되어 있다. SWOT 분석결과 전력 증폭기 모듈설계 노하우와 하이브리드 전력 증폭기를 개발할 수 있는 강점과 군수용으로 응용 분야 확대 및 5G 상용화의 기회를 활용하여 사업 기회를 선점하는 사업전략 수립이 필요하다. 산업구조 분석결과 구매자의 교섭력이 높으므로 전방산업에 배치된 수요기업과의 전략적이고 긴밀한 협력관계를 유지하기 위한 전략을 추진해야 한다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.8
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• pp.709-716
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• 2016

In this paper, A duplexer module with temperature-insensitive electrical characteristics was proposed for remote wireless communication system. Duplexer modules are required to have performances of low insertion loss, high isolation between transmitted band and received band, harmonic suppression as well as high power durability in the system for transmitting guided information to missile flying a free space on the ground. The proposed duplexer module are consist of transmission bandpass filter and receiving bandpass filter which are connected to common antenna port, planar coupler for output power monitoring and low pass filter for harmonic attenuation of power amplifier and coaxial cavity resonator. The material and dimensions of the resonator are determined for minimum frequency shift by temperature variation using 3D EM simulation. The measured results of the prototype showed a good agreement with the simulation results, and it should be well applied not only for guided weapon systems but also for any other communication systems such as remote radio head.

• ETRI Journal
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• v.31 no.5
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• pp.622-624
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• 2009

This letter presents a compact 2.5 Gb/s burst-mode receiver using the first reported monolithic amplifier IC developed with 0.25 ${\mu}m$ SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next-generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.639-645
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• 2014

In this paper, the scheme of a single module for simultaneous operation of all-optical computing circuits, namely half adder and half subtractor, are realized using semiconductor optical amplifier (SOA) based logic gates. Optical XOR gate by employing a SOA based Mach-Zehnder interferometer (MZI) configuration is used to get the sum and difference outputs. A carry signal is generated using a SOA-four wave mixing (FWM) based AND gate, whereas, the borrow is generated by employing the SOA-cross gain modulation (XGM) effect. The obtained results confirm the feasibility of our configuration by proving the good level of quality factor i.e. ~5.5, 9.95 and 12.51 for sum/difference, carry and borrow, respectively at 0 dBm of input power.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.6
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• pp.163-168
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• 2018

We developed W-band transceiver module using open MMIC chip such as receiver single chip and transmitting power amplifier. In order to calculate the noise figure and output power value, we analyzed the W-band transition loss from the antenna to MMIC connection and constructed the 12 channel receiver and the 5 channel transmitter. And compared with the results of the measurement. As a result, the output power of the transmitter was similar to the analytical results and the measured results at room temperature and environmental conditions. The noise figure of the receiver was also similar, but some channels showed error of about 3 dB due to manufacturing error.