• Proceedings of the KSR Conference
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• 2000.05a
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• pp.202-209
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• 2000

This paper introduces the main function and protection method of IGBT gate driver that designed by KOROS. Recently, the applications of insulated gate bipolar transistors(IGBTs) have expanded widely, particularly in the area of railway converters. This driver is suitable for railway traction applications, so they are designed for circumstance of railway vehicle such as vibration. The input control power for this driver is supplied from battery charger of railway. it is no necessary an isolated power supply board or auxiliary power supply, with substantial savings in cost and space in railway applications. This gate driver can be used wide range of input voltage. So, performance of the driver has no relation with the battery voltage(70V∼110V). The protection methods of IGBT gate driver have many kind of ways, but this gate driver it designed to apply to converter for railway system, so this gate driver includes protection for arm short current and low control power voltage, etc. And the process of protection method and protection reference value are optimized by means of sufficient test with our own facilities.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.6
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• pp.500-506
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• 1999

This paper presents the h밍h performance [GBT type auxiliary jXlWer supply designt.'Cl by new concept. For t the simplification and higher performance, the direct :3 level PWlVl inverter using the high capacity IGBT and t the 32bit DSP are adopted. The cost as well as bulk and weight is appreciably reduced about 40% lower than t those of conventional one. the electrical efficiency above 94~) o and the audible noise level is less than 65dB. In a addition, the TIID(Total lIannonic Distortion) factor is below 5% an이 the voltage fluctuation on a transient s state is below 10%.w 10%.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.230-231
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• 2012

This paper describes a gate driver that operates numerous semiconductor switch in the solide-state pulsed power modulator. the proposed gate driver is designed to receive both the isolated drive-power and the on/off pulse signals through the transformer. Moreover, the IGBT-switch can be quickly turned off by adding protection circuit. Therefore it protects the IGBT-switch from the arc condition that frequently occurs in high-voltage pulse application. To comprehend operating characteristic of each IGBT-switch in pulse output condition, the device consisting of a high efficiency soft-switching capacitor charger and two series stacking IGBT-switch is developed. Finally, the relability of the proposed gate driver and the device for its test are proved through PSpice simulation and experiments.

• Journal of Power Electronics
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• v.13 no.4
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• pp.584-591
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• 2013

In this paper, a hybrid booster power module with Si IGBT and Silicon Carbide (SiC) Schottky Barrier Diode (SBDs) is presented. The switching characteristics of the hybrid booster module are compared with commercial Silicon IGBT/Si PIN diode based modules. We applied the booster power module into a non-isolated on board vehicle charger with a simple buck-booster topology. The performances of the on-vehicle charger are analyzed and measured with different power modules. The test data is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4 % with the SiC SBD based hybrid booster module. The conversion efficiency gain of 1.4 % is realizable by replacing the Si-based booster module with the Si IGBT/SiC SBD hybrid boost module in the 6.6 kW on-vehicle chargers.

• Journal of IKEEE
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• v.12 no.2
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• pp.110-117
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.7
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• pp.97-104
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• 2011

This paper presents modeling and control for the emerging IGBT converter-based high-voltage direct-current system (IGBT-HVDC). This paper adds to the representation of the IGBT-HVDC system in the dq-synchronous reference frame and its decoupled control scheme. Additionally, since the IGBT-HVDC is able to actively support the grid due to its capacity to control independently active and reactive power production, a reactive power control scheme is presented in order to regulate/contribute to the voltage at a remote location by taking into account its operational state and limits. The ability of the control scheme is assessed and discussed by means of simulations using ahybrid power system, which consists of a permanent magnetic synchronous-generator (PMSG) based wind turbine, an IGBT-HVDC, and a local load.

• Proceedings of the KIPE Conference
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• 2007.11a
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• pp.43-46
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• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important for series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used. Proposed scheme has lots of advantages such as long lifecyle, compact size, flat topped pulse forming, small weight, protection for arc, high efficiency and flexibility to generate various kinds of pulse output.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.3
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• pp.424-430
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• 2013

This paper presents a new design works for the braking chopper system which is included in the propulsion system of KTX high speed train. Due to the current fed type synchronous motors used in the propulsion system, some different behaviors are shown comparing to the voltage type other chopper systems. Specially this chopper system acts either braking controlling or regenerative power controlling system with a parallel resistive load in the propulsion system. In this paper, an improved simple high power IGBT brake chopper system has proposed which is able to be replaced with an existing complicated GTO chopper system. The analytical approaches to the parallel load type current chopper system and the propper snubber circuits calculation were explained in this paper to control new chopper system. In addition, the thermal resistance of the cooling system for power dissipation of IGBT modules was calculated also. Finally several PC simulations have been done to clarify its availability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.292-295
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• 2002

In this work, transient characteristics of NPT(Non Punch Through)-IGBT(Insulated Gate Bipolar Transistor) have been studied with different temperatures analytically. Power losses are caused by heat generated in MIT-IGBT for steady state and transient state conditions. We therefore have focused on the analysis of excess carrier concentration and excess charge injected into N-drift layer with different temperatures and have obtained anode voltage drop during turn-off with lifetime of 2.4[${\mu}$s].

• Proceedings of the KSR Conference
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• 1998.11a
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• pp.226-232
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• 1998

In this pager, we present IGBT VVVF inverters as a 1C1M propulsion system for electric car. This inverters are composed of high power IGBT's and controlled by compact control units. The control unit performs full digital control by using 32bit DSP and microconteroller. By using CAN-bus, high speed network is constructed within tow control units. The stack is simplified and optimized by using plate bus and IGBT driver units of hybrid-type.