• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 전력전자학술대회 논문집
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• pp.335-339
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• 2001

The recent advancements in power electronic switching devices have enabled high frequency switching operation and have improved the performance of pulse-width modulated (PWM) inverters for driving induction motors. But, the insulation failures of stator winding have attracted much concern due to high dv/dt of IGBT PWM inverter. In this paper, the test results for evaluation on the stator winding insulation of low-voltage induction motors for IGBT PWM inverter applications are presented. The insulation characteristics are analyzed with partial discharge and dissipation factor tests. Also, insulation breakdown tests by switching pulse voltage are performed. An effective insulation technique to enhance the insulation strength is suggested from the test results.

• Journal of Power Electronics
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• 제19권6호
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• pp.1591-1600
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• 2019

In this paper, a practical SPICE model for an IGBT and a PiN diode is proposed based on the Finite Differential Method (FDM). Other than the conventional Fourier model and the Hefner model, the excess carrier distribution can be accurately solved by a fast FDM in the SPICE simulation tool. In order to improve the accuracy of the SPICE model, the Taguchi method is adopted to calibrate the extracted parameters. This paper presents a numerical modelling approach of an IGBT and a PIN diode, which are also verified by SPICE simulations and experiments.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.23-28
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• 2008

In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2007년도 추계학술대회 논문집
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• pp.1438-1444
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• 2007

Standard Gate Turn Off (GTO) Thyristor drive technology results in inhomogeneous turn-on and turn-off transients which in turn needs costly dv/dt and di/dt snubber circuits. Added to this GTO is bulky in size, needs external cooling, slower switching time etc. The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO technology. Indian Railway has developed first IGBT based traction converter and was commissioned in November 2006. Some of the supremacy of IGBT are smaller in size, no external cooling is required, built in power supply which enhances reliability, lower switching losses which leads to higher efficiency, reduced gate drive, high frequency operation in real time etc. These advantages are highlighted along with IGBT Traction system in operation.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2014년도 전력전자학술대회 논문집
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• pp.429-430
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• 2014

본 논문에서는 3-레벨 NPC 방식을 적용한 직류배전전력변환장치의 IGBT손실을 고려한 방열을 제안하였다3-레벨 양방향 인버터의 경우 dv/dt가 작기 때문에 THD를 감소 시킬 수 있으며 필터의 부피와 EMI를 저감 시킬 수 있는 장점이 있다. 3-레벨 양방향 인버터에서 Dual-IGBT를 사용할 경우 IGBT의 열분배가 중요하다. 강제 풍냉식 전력변환장치의 신뢰성과 안전성을 높일 수 있도록 IGBT 손실로 인한 발열과 방열을 정확히 분석하고, 시뮬레이션을 통하여 확인하였다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 1999년도 추계 기술심포지움 논문집
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• pp.77-81
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• 1999

• Journal of Power Electronics
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• 제3권4호
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• pp.239-248
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• 2003

This paper presents a novel prototype of three-phase voltage source type zero voltage soft-switching inverter with the auxiliary resonant snubbers suitable for high-power applications with IGBT power module packages in order to reduce their switching power losses as well as electromagnetic conductive and radiative noises. A proposed single inductor-assisted resonant AC link snubber circuit topology as one of some auxiliary resonant commutation snubbers developed previously to achieve the zero voltage soft-switching (ZVS) for the three-phase voltage source type sinewave PWM inverter operating under the instantaneous space voltage vector modulation is originally demonstrated as compared with the other types of resonant AC link snubber circuit topologies. In addition to this, its operation principle and unique features are described in this paper. Furthermore, the practical basic operating performances of the new conceptual instantaneous space voltage vector modulation resonant AC link snubber-assisted three-phase voltage source type soft-switching PWM inverter using IGBT power module packages are evaluated and discussed on the basis of switching voltage and current waveforms, output line to line voltage quality, power loss analysis, actual power conversion efficiency and electromagnetic conductive and radiative noises from an experimental point of view, comparing with those of conventional three-phase voltage source hard-switching PWM inverter using IGBT power modules.

• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.257-263
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• 2013

In this paper, Solar, Wind, fuel cell used in a Power conversion devices and industrial inverter motor to increase the efficiency of energy consumption, which is a core part of high-efficiency, high-voltage Trench Gate Field Stop IGBT was studied. For this purpose Planar type NPT IGBT and Planar type Field Stop IGBT have designed a basic structure designed to Trench Gate Field Stop IGBT based on the completed structure by analyzing the energy consumption of electrical characteristics, efficiency is a key part, high-efficiency and high-voltage inverter for industry regarding the optimization design for Trench Gate Field Stop IGBT.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.749-752
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• 1993

This paper deals with the development of three phase 440[V], 500[KVA] Inverter system using the IGBT Devices. IGBT's have been used very successfully in variable frequency induction motor drive equipment. Problems associated with power devices characteristics when power devices are operated in parallel, such as balanced switching behavior and thermal stability, can be solved by using NPT type IGBT's. By Experimental results, it is confirmed that the voltage overshoot and reverse recovery current was very low. The equipment had proved to be reliable and short circuit proof. In addition, the performances in term of thermal characteristics, protection functions and stability are satisfactory.