• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.661-662
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• 2012

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.50-55
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• 1998

This paper introduces the advantages of zero voltage transition(ZVT) boost converter for power factor correction and analyzes the control method of ZVT with IC UC3855. Practical design issues which include the components selection and design procedure are discussed. The experimental results are given.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.18 no.1
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• pp.31-39
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• 2008

The development of next-generation resident registration cards, financial IC cards and administrative agency IC cards based on a smart card is currently coming out in Korea. However, the low-price IC cards without countermeasures against side channel analysis attacks are expected to be used fer cost reduction. This paper has investigated the side channel resistance of financial IC cards that are currently in use and have performed DPA attacks on the financial IC cards. We have been able to perform successful DPA attacks on these cards by using only 100 power measurement traces. From our experiment results, we have been able to extract the master key used for encryption of a count PIN number.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.36-40
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• 2022

High-power devices, such as LEDs and radars, inevitably generate a large amount of heat, which is the main cause of shortening lifespan, deterioration in performance, and failure of electronic devices. The embedded IC process can be a solution; however, when applied to large-area substrates (larger than 8 in), there is a limit owing to the difficulty in the process after wafer thinning. In this study, an 8-in wafer-level high-power electronic package based on the embedded IC process was implemented with temporary bonding and debonding technology using double-sided thermal release tape. Good heat-dissipation characteristics were demonstrated both theoretically and experimentally. These findings will advance the commercialization of high-power electronic packaging.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.719-726
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• 2008

In this paper, we designed driving IC for 500 V resonant half-bridge type power converter, In this single-ended level shifter, chip area and power dissipation was decreased by 50% and 23.5% each compared to the conventional dual-ended level shifter. Also, this newly designed circuit solved the biggest problem of conventional flip-flop type level shifter in which the power MOSFET were turned on simultaneously due to the large dv/dt noise. The proposed high side level shifter included switching noise protection circuit and schmmit trigger to minimize the effect of displacement current flowing through LDMOS of level shifter when power MOSFET is operating. The designing process was proved reasonable by conducting Spectre and PSpice simulation on this circuit using 1${\mu}m$ BCD process parameter.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.808-809
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• 2008

22.9kV 50MVA HTS power cable has been developed and tested by Korea Electrotechnology Research Institute and LS Cable Company and it was supported by a grant from Center for Applied Superconductivity Technology of the 21st Century Frontier R&D Program. In this paper, DC Ic of 100m HTS cable which is installed at Kochang testing station was measured and analyzed. A measurement technique of DC Ic used by resistance and inductance removal method is established. The HTS power cable is composed of 2 layers for transmission and 1 layer for shield. For the analysis of AC losses in an HTS power cable, 2-dimensional numerical calculation was carried out to define the magnetic field distribution. We calculated the magnetization losses in the HTS core of that cable from these fields. These calculated results are in accordance with those of experiment.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1141-1144
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• 2003

For proper communication with various types of IC-Card, multiple IC-Card interface complying with the IC-Card standard (ISO7816) is embedded and realized as a peripheral on the 32-bit RISC based system-on-a-chip. It provides the generation of either 3.3V or 5V power supply for the operation of the inserted IC-Card as well. IC-Card interface is divided into an analog front-end (AFE) and a digital back-end (DBE). The embedded DC-DC converters suitable for driving IC-Cards are incorporated in the AFE. The chip design for multiple IC-Card interface is implemented on a standard 0.35${\mu}{\textrm}{m}$ triple-metal double-poly CMOS process and is packaged in a 352-pin plastic ball grid array (PBGA). The total gate count is about 400,000, excluding the internal memory. Die area is 7890${\mu}{\textrm}{m}$ $\times$ 7890${\mu}{\textrm}{m}$.

• Proceedings of the IEEK Conference
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• 2000.09a
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• pp.911-914
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• 2000

본 논문에서는 배터리가 없는 ASK 전송방식의 RFID(Radio Frequency IDentification) Transponder 칩 설계에 관한 내용을 다룬다. Transponder IC는 power-generation 회로, clock-generation 회로, digital block, modulator, overoltge protection 회로로 구성된다. 설계된 칩은 저전력 회로를 적용하여 원거리 transponder칩을 구현할 수 있도록 하였다. 설계된 회로는 0.25㎛ 표준 CMOS 공정으로 레이아웃하여 제작하였다.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.41 no.1
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• pp.79-84
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• 2013

DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The DC/DC converter is composed of a PWM-IC (pulse width modulation-integrated circuit) controller, a MOSFET (metal-oxide semiconductor field effect transistor), inductor, capacitor, etc. It is shown that the variation of threshold voltage and the offset voltage in the electrical characteristics of PWM-IC increase by radiation effects in TID (Total Ionizing Dose) testing at the low energy ${\gamma}$ rays using $^{60}Co$, and 4 heavy ions applied for SEL (Single Event Latch-up) make the PWM pulse unstable. Also, the output waveform for the given input in the DC/DC converter is observed by the simulation program with integrated circuit emphasis (SPICE). TID testing on PWM-IC is accomplished up to the total dose of 30 krad, and the cross section($cm^2$) versus LET($MeV/mg/cm^2$) in the PWM operation is studied at SEL testing after implementation of the controller board.

• KIPE Magazine
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• v.10 no.1
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• pp.13-17
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• 2005