• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2010년도 춘계학술대회
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• pp.673-675
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• 2010

본 논문은 400 MHz 대역 시스템에 적용할 수 있는 고 효율을 유지하는 적응형 E급 증폭기를 제안하였다. 이 증폭기는 입력 주파수 변화에 공진기 주파수가 적응되도록 마이크로프로세서를 사용하여 고 효율을 유지하도록 하였다. 이러한 적응형 E급 증폭기의 동작을 보이기 위해서 중심 주파수는 450 MHz 이고, 대역폭은 100 MHz인 증폭기를 제작하여 이 주파수 구간에서는 60% 이상의 효율을 유지하였고, 최대 효율은 74.8%를 얻었다.

• ETRI Journal
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• 제36권3호
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• pp.498-501
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• 2014

A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-array radar system was designed and fabricated using commercial $0.25{\mu}m$ AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact $14.82mm^2$ chip area, an output power density of $3.2W/mm^2$ is demonstrated.

• ETRI Journal
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• 제33권1호
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• pp.6-12
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• 2011

A case study of an active transmitting patch antenna revealed a characteristic loop locus of DC power versus RF output power as drive frequency was varied, with an operational bandwidth substantially smaller than the impedance bandwidth of the radiator. An approximate simulation technique, based on separation of the output capacitance of the power transistor, yielded easily visualized plots of power dependence on internal load impedance, and a simple interpretation of the experimental results in terms of a near-resonance condition between the output capacitance and output packaging inductance.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.851-854
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• 1999

A high efficient, CMOS RF power amplifier at a 2.SV power supply for the band of 902-928MHz was designed and analyzed in 0.25${\mu}{\textrm}{m}$ standard CMOS technology. The output power of designed amplifier is being digitally controlled from a minimum of 2㎽ to a maximum of 21㎽, corresponding to a dynamic range of l0㏈ power control. The frequency response of this power amplifier is centered roughly at 915MHz. The power added efficiency of designed amplifer is almost 48% at maximum output power of 21㎽.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(5)
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• pp.195-198
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• 2000

A CMOS power amplifier for wireless home networks is designed using 0.2sum 1-poly 5-metal standard CMOS technology and simulation results are presented. The power amplifier provides maximum output power of 16.5dBm to a 50-Ohm load at 2.450Hz and dissipates 220mW of dc power from a single 2.5-V supply. The designed CMOS power amplifier has power control range of 20dB and an overall power-added efficiency of 17%

• 자원리싸이클링
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• 제11권5호
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• pp.30-33
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• 2002

최근의 전자기기 제품에서 전원 트랜스는 매우 중요한 비중을 차지하고 있다. 이러한 전원트랜스의 소형화, 경량화, 소전력화를얻기 위해서는, 고성능의 자심재료가 필요하다. 본 논문에서는 고성능, 저손실의 자심재료를 위해 Mn-Zn Ferrite에 $V_2$$O_{5}$와 $CaCo_3$를 첨가하였다. 조성은 MnO : ZnO : $Fe_2$$O_3$=37 : 11 : 52 mol%로 하였다. 이 시료를 $1250^{\circ}C$에서 3시간 소결하였다. 측정은 0.1 MHz에서 초투자율을 측정하였으며, 전력손실은 200 mT에서 25 KHz, 50 KHz, 100 KHz 및 온도를 변화시켜 측정하였다. $V_2$$O_{5}$ 와 $CaCo_3$이 각각 0.08 wt%, 0.05 wt% 첨가하였을 경우 측정조건 200 mT, 100 KHz, $^60^\circ}C$에서 415 ㎾/$m^2$의 값을 얻을수 있었다. 따라서$ V_2$$O_{5}$와 $CaCo_3$를 소량 첨가함으로써 고주파수에서의 주 손실인 와전류 손실을 줄여 전원 트랜스의 전력손실을 저하시킬 수 있었다.

• 한국전자파학회논문지
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• 제26권9호
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• pp.783-789
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• 2015

본 논문에서는 long term evolution(LTE) 통신을 위한 2.6 GHz 대역에서 동작하는 고효율 Doherty 전력증폭기를 설계하였다. 2차 및 3차 고조파 임피던스를 조정하기 위한 간단한 구조의 정합 네트워크를 통해 전력증폭기의 고효율 동작을 달성하였다. Doherty 전력증폭기는 다양한 측면에서 장점을 갖는 GaN-HEMT 소자를 이용하여 제작되었으며, 10 MHz의 대역폭 및 6.5 dB 첨두 전력 대 평균 전력비(PAPR)의 특성을 갖는 LTE downlink 신호를 이용하여 측정되었다. 평균 전력 33.4 dBm에서 13.1 dB의 전력 이득, 57.6 %의 전력부가효율(PAE) 및 -25.7 dBc의 인접채널누설비(ACLR) 특성을 갖는다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.675-678
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• 1998

In this paper, power amplifiers for PCS phone were designed with the GEC Marconi H40 HEMT libray. The 1st stage was carefully designed in order to obtain k〉1 using a parallel resistor, and its S21 gain of 18.3dB and input reflection coefficient of -4dB were obtained. And S21 gain of 18dB and input reflection coefficient of -7dB were obtained from the 2nd stage. Finally, total S21 gain of 38dB, input reflection coefficient of -16dB, power gain of 35.2dB, output power of 28.7dBm and PAE(power added efficiency) of 29% were obtained from the designed MMIC power amplifiers. The chip size is $1.729$\times$0.94\textrm{mm}^2.$

• ETRI Journal
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• 제31권3호
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• pp.247-253
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• 2009

We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 ${\mu}m$ GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.

• Journal of Mechanical Science and Technology
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• 제16권2호
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• pp.155-164
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• 2002

The power steering system for vehicles is becoming essential for supporting the steering efforts of the drivers, especially for the parking lot maneuver Although hydraulic power steering has been widely used for years, its efficiency is not high enough. The problems associated with a hydraulic howe. steering system can be solved by a motor driven power steering (MDPS) system. In this study, a dynamic model and a control algorithm for the ball screw type of MDPS system have been derived and analyzed by using the method of discrete modeling technology. To improve steering feel and power steering characteristics, two derivative gains are added to the conventional power boosting control algorithm. Through simulations, the effects of the control gain on the steering angle gain were verified in the frequency domain. The steering returnability and steering torque phase lag in on-center handling test were also evaluated in the time domain.