Design of MMIC Power Amplifier using Power HEMT at 1740~1780MHz

전력용 HEMT를 이용한 1740~1780MHz 대역의 MMIC 전력증폭기 설계

  • 윤관기 (동국대학교 전자공학과 반도체 및 집적회로 연구실) ;
  • 조희철이진구 (동국대학교 전자공학과 반도체 및 집적회로 연구실)
  • Published : 1998.10.01

Abstract

In this paper, power amplifiers for PCS phone were designed with the GEC Marconi H40 HEMT libray. The 1st stage was carefully designed in order to obtain k〉1 using a parallel resistor, and its S21 gain of 18.3dB and input reflection coefficient of -4dB were obtained. And S21 gain of 18dB and input reflection coefficient of -7dB were obtained from the 2nd stage. Finally, total S21 gain of 38dB, input reflection coefficient of -16dB, power gain of 35.2dB, output power of 28.7dBm and PAE(power added efficiency) of 29% were obtained from the designed MMIC power amplifiers. The chip size is $1.729$\times$0.94\textrm{mm}^2.$

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