• Bulletin of the Korean Chemical Society
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• 제4권1호
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• pp.28-36
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• 1983

We considered the tunneling effect on the rate constants calculated from transition-state theory for the H + $D_2$ and D + $H_2$ reactions. A method for evaluating the important parameter Ec (potential barrier height) was proposed. A tunnel-effect correlation factor (TECF) ${\Gamma}_{t}exp{\theta}_t$ was estimated from experimental data, and compared with the corresponding values obtained from many theoretical methods. According to our results, the tunneling effect cannot be negligible around $800^{\circ}$K where the TECF value is ca. 0.8 whereas the factor approaches to unity at T > $2400^{\circ}$K where the tunneling completely disappears. In addition to the above fact, we also found that the TECF for the D + $H_2$ reaction is greater than that of the H + $D_2$ reaction in agreement with Garrett and Truhlar's result. In contrast to our result, however, Shavitt found that the order is reversed, i.e., TECF for (D + $H_2$) is greater than that for (H + $D_2$). We discussed about the Shavitt's result.

• 한국재료학회지
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• 제29권10호
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• pp.586-591
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• 2019

This study describes the doping effect of $Yb_2O_3$ on microstructure, electrical and dielectric properties of $ZnO-V_2O_5-MnO_2-Nb_2O_5$ (ZVMN) ceramic semiconductors sintered at a temperature as low as $900^{\circ}C$. As the doping content of $Yb_2O_3$ increases, the ceramic density slightly increases from 5.50 to $5.54g/cm^3$; also, the average ZnO grain size is in the range of $5.3-5.6{\mu}m$. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of $Yb_2O_3$ is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% $Yb_2O_3$ reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of $2.46-7.41{\times}10^{17}cm^{-3}$ with increasing doping content of $Yb_2O_3$ and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of $Yb_2O_3$ reaches 0.1 mol%, whereas further doping increases it. The value of $tan{\delta}$ increases from 0.209 to 0.268 with the doping content of $Yb_2O_3$.

• 한국지구과학회지
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• 제42권6호
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• pp.605-622
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• 2021

Seasonal forecasting has numerous socioeconomic benefits because it can be used for disaster mitigation. Therefore, it is necessary to diagnose and improve the seasonal forecast model. Moreover, the model performance is partly related to the ocean model. This study evaluated the hindcast performance in the upper ocean of the Global Seasonal Forecasting System version 5-Global Couple Configuration 2 (GloSea5-GC2) using a multivariable integrated evaluation method. The normalized potential temperature, salinity, zonal and meridional currents, and sea surface height anomalies were evaluated. Model performance was affected by the target month and was found to be better in the Pacific than in the Atlantic. An increase in lead time led to a decrease in overall model performance, along with decreases in interannual variability, pattern similarity, and root mean square vector deviation. Improving the performance for ocean currents is a more critical than enhancing the performance for other evaluated variables. The tropical Pacific showed the best accuracy in the surface layer, but a spring predictability barrier was present. At the depth of 301 m, the north Pacific and tropical Atlantic exhibited the best and worst accuracies, respectively. These findings provide fundamental evidence for the ocean forecasting performance of GloSea5.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.85-90
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• 2012

In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program / erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density ($S_{ID}/I^2_D$>), which means that it has more traps and defects in the channel layer. The apparent hooge's noise parameter (${\alpha}_{app}$) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher ${\alpha}_{app}$ values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.