• 한국표면공학회지
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• 제29권6호
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• pp.766-772
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• 1996

Undoped $SnO_x$ thin films were deposited on Si(100) substrate by using reactive ioassisted deposition technique (R-IAD). In order to investigate the effect of initial oxygen content and heat treatment on the oxidation state and crystalline structure of tin oxide films, $SnO_x$ thin films were post-annealed at 400~$600^{\circ}C$ for 1 hr. in a vacuum ~$5 \times 10^{-3}$ -3/ Torr or were directly deposited on the substrate of $400^{\circ}C$ and the relative arrival ration ($Gamma$) of oxygen ion to Sn metal varied from 0.025 to 0.1, i.e., average impinging energy ($E_a$) form 25 to 100 eV/atom. As $E_a$ increased, the composition ratio of $N_ON{sn}$ changed from 1.25 to 1.93 in post-annealing, treatment and 1.21 to 1.87 in in-situ substrate heating. In case of post-annealing, the oxidation from SnO to $SnO_2$ was closely related to initial oxygen contents and post-annealing temperature, and the perfect oxidation of $SnO_2$ in the film was obtained at higher than $E_a$=75 eV/atom and $600^{\circ}C$. The temperature for perfect oxidation of $SnO_2$ was reduced as low as $400^{\circ}C$ through in-situ substrate heating. The variation of the chemical state of $SnO_x$ thin films with changing $E_a$'s and heating method were also observed by Auger electron spectroscopy.

• 대한기계학회논문집
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• 제15권6호
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• pp.1982-1989
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• 1991

본 연구에서는 AISI 강은 대부분 열처리후에 사용되는 고강도강으로 용접시 발생하는 높은 잔류응력 분포를 제거 또는 감소시키기 위해서 여러가지 방법이 사용된 다. 잔류응력 제거는 용접후 풀림처리를 하면 잔류응역이 제거된다. 그러나 풀림 처리 하기전에 용접부에 높은 잔류응력 제거는 용접후 풀림처리를 하면 잔류응력이 제 거된다. 그러나 풀림처리 하기전에 용접부에 높은 잔류응력에 의해 균열이 생성될 수 있으므로 용접시 높은 잔류응력이 생성되지 않도록 예열 및 후열처리를 필요로한 다. 그러므로 본 연구에서는 예열 및 후열이 잔류응력 분포에 어떠한 영향을 주는가 를 실험적인 방법에 의해 연구하였다.

• 한국재료학회지
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• 제8권4호
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• pp.317-322
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• 1998

플라즈마 화학기상증착법에 의해 증착된 저유전율 SiOF박막의 물성 안정화를 위하여 증착후 $N_2O$플라즈마로 열처리함으로써 그 특성을 평가하였다. SiOF박막은 대기방치 및 열처리에 불안정한 성질을 가진다. SiOF 박막은 박막내의 F-Si-F 결합의 존재 때문에 흡습현상이 발생하며, 박막내의 F함량이 증가함에 따라 수분 흡수가 증가한다. 또한 열처리를 거치면서 F이 탈착되어 박막내의 F함량이 감소한다. $N_2O$플라즈마 열처리는 표면에 얇은 SiON층을 형성시킴으로써 박막을 안정화시키는데 효과적이었다. 그러나 장시간의 N/sun 2/O플라즈마 열처리는 유전율을 크게 증가시킨다. 따라서 $N_2O$플라즈마 열처리에 의한 유전율의 증가없이 물성을 안정화 시키기 위해서는, 대기방치나 열처리에 의한 안정화 효과를 유지하면서 $N_2O$플라즈마 열처리에 의한 유전율의 증가를 최소화시킬 수 있는 공정의 확립이 필요하다.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.93-98
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• 2020

We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and I_on/I_off ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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• pp.27-30
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• 1988

This paper is investigated on the sublimation in obliguely deposited a-$Se_{75}Ge_{25}$ films. With varying the treatment conditions, the transmittance in each of $0^{\circ}$, $60^{\circ}$, and $80^{\circ}$-deposited films and the absorbance in $80^{\circ}$-deposited film were measured. By increasing the angle of deposition, the variation of transmittance in post-exposure annealing film showed the characteristic different from that in only exposed film or annealed film. And the changes of thickness in $80^{\circ}$-deposited film were measured. The results showed that the changing rate of thickness was 1.4% in exposed film and 9.4% in post-exposure annealing film. Therefore, in $80^{\circ}$-deposited film, the possibility for sublimatin due to physical and chemical change by post-exposure annealing can be suggested.

• 마이크로전자및패키징학회지
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• 제24권2호
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• pp.69-74
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• 2017

인쇄전자소자 금속 배선의 고온 신뢰성 평가를 위해 스크린 프린팅 기법으로 도포된 Ag 박막과 폴리이미드 기판 사이의 계면접착력을 $200^{\circ}C$ 후속 열처리 시간에 따라 $180^{\circ}$ 필 테스트를 통해 평가하였고, 박리 계면 미세구조를 분석하였다. 후속 열처리 전 필 강도는 약 16.7 gf/mm 이었고, 열처리 24 시간 후 필 강도는 29.4 gf/mm까지 증가하였는데, 이는 초기 열처리에 의해 접합계면에서 Ag-O-C 화학 결합의 증가와 바인더의 organic bridges 효과가 주 원인인 것으로 판단된다. 한편, 열처리 시간이 48, 100, 250, 500 시간으로 더욱 증가함에 따라 필 강도는 각각 22.3, 3.6, 0.6, 0.1 gf/mm으로 급격히 감소하는 거동을 보였다. 이는 $200^{\circ}C$의 고온에서 장시간 노출되었을 때 Cu/Ag 계면 산화막 형성이 주 원인인 것으로 판단된다.

• 열처리공학회지
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• 제24권6호
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• pp.338-342
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• 2011

Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on glass substrate and then the effect of post deposition annealing at nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes at different temperature of 150, 300 and $450^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $450^{\circ}C$ have the highest optoelectrical performance in this study.

• 한국전기전자재료학회논문지
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• 제37권4호
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• pp.439-444
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• 2024

This study investigates the post-thermal treatment effects on the efficiency of silicon heterojunction solar cells, specifically examining the influence of annealing on p-type microcrystalline silicon oxide and ITO thin films. By assessing changes in carrier concentration, mobility, resistivity, transmittance, and optical bandgap, we identified conditions that optimize these properties. Results reveal that appropriate annealing significantly enhances the fill factor and current density, leading to a notable improvement in overall solar cell efficiency. This research advances our understanding of thermal processing in silicon-based photovoltaics and provides valuable insights into the optimization of production techniques to maximize the performance of solar cells.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.567-571
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• 2009

Polycrystalline ZnO and Ga doped ZnO (GZO) films are deposited on glass substrate by RF magnetron sputtering at room temperature. The characteristics of ZnO and GZO films are investigated with X-ray diffraction measurement, UV-VIS-NIR spectrophotometer $(250{\sim}1200nm)$ and hall measurement. The post-growth thermal treatment of these films is carried out in N2 ambient at $500^{\circ}C$ for 30 min and an hour. ZnO and GZO films have different changing behavior of structural and optical properties by annealing. To use transparent conductive films for solar cell, films should have not only high transmittance but also good electrical property. Although as deposited GZO films have electrical properties than ZnO films, GZO films have not good transmittance properties. Consequently, we succeed that the high transmittance of GZO films is improved by annealing process.

• 한국전기전자재료학회논문지
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• 제24권5호
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• pp.392-397
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• 2011

The effect of various post-annealing temperature to sputtered Pb(Zr,Ti)$O_3$ (PZT) thin films was investigated. The crystallization process, surface morphology and the electrical characteristics strongly depends on the rapid thermal annealing (RTA). In radio frequency (RF) sputtering methods, there were many papers mostly forcing on the crystal forming and the surface variations with different elements distribution (Pb, Ti, Zr, O) on the surface of the PZT layer. In this experiment, the post-annealing treatment promoted the Pb volatilization in PZT thin film and affected the Ti diffused throughout the Pt layer into the PZT layer. Second ion mass spectroscopy (SIMS) analysis was employed to show that the Pb element in the PZT layer was decreased at the same time the Ti element mass was slight decreased than Pb with increasing RTA temperature. That result prove the content of Pb affect the PZT thin film property.