• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
• /
• pp.274-277
• /
• 2000

Thin Film Transistor(TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature(500$^{\circ}C$) Metal-Induced Lateral Crystallization(MILC) furnace annealing and high -temperature (700$^{\circ}C$) rapid thermal annealing leads to the improvement of the material quality The TFTs measured with this two-step annealing material exhibit better characteristics than those obtained by using conventional MILC furnace annealing.

• 한국세라믹학회지
• /
• 제42권9호
• /
• pp.624-630
• /
• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• Transactions on Electrical and Electronic Materials
• /
• 제3권1호
• /
• pp.14-17
• /
• 2002

The effects of substrate temperatures and annealing temperatures on the microstructures and ferroelectric properties of PbZ $r_{0.52}$ $Ti_{0.48}$ $O_3$(PZT) thin fims prepared by pulsed laser deposition (PLD) were investigated. For this purpose, the PZT films were deposited at various substrate temperatures (400~$600^{\circ}C$) with post annealing process in oxygen atmosphere. The single perovskite phase was formed at the deposition temperature of 500 to 55$0^{\circ}C$ without post annealing and the PZT films deposited below 50$0^{\circ}C$ formed the single phase with post annealing at $650^{\circ}C$. The grain size of the films increased and the grain boundary of the films was clearly defined as the substrate temperature increased from 400 to 55$0^{\circ}C$. The remnant polarization (Pr) and the coercive field (Ec) of the films deposited at 55$0^{\circ}C$ and annealed at $650^{\circ}C$ were 34.3 $\mu$C/c $m^2$and 60.2 kV/cm, respectively.y.y.

• 한국전기전자재료학회논문지
• /
• 제19권7호
• /
• pp.611-617
• /
• 2006

We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

• 한국전기전자재료학회논문지
• /
• 제16권3호
• /
• pp.190-194
• /
• 2003

Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.

• 통합자연과학논문집
• /
• 제9권4호
• /
• pp.275-280
• /
• 2016

Intensity modulated photovoltage spectroscopy (IMVS) analysis of organic solar cells (OSCs) with a bulk-heterojunction (BHJ) film composed of P3HT and $PC_{61}BM$ was performed. The dynamic response of charge recombination by the post-annealing approach in $P3HT/PC_{61}BM$ BHJ solar cells characterized by IMVS demonstrated that post-annealing reduced the recombination of electron carriers in the device. The recombination times of $P3HT/PC_{61}BM$ BHJ solar cells post-annealed at room temperature, 80, 120, and $140^{\circ}C$ were 0.009, 0.020, 0.024, and 0.030 ms, respectively, at a short-circuit current of 0.18 mA. The results indicated that the IMVS analysis can be effectively used as powerful.

• 한국전기전자재료학회논문지
• /
• 제24권9호
• /
• pp.739-743
• /
• 2011

Ga doped ZnO (GZO)/Cu bi-layer films were deposited with RF and DC magnetron sputtering on glass substrate and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in gas pressure of $1{\times}10^{-3}$ Torr and the annealing temperatures were 150 and $300^{\circ}C$. With increasing annealing temperature, GZO/Cu films showed an increment in the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The GZO/Cu films annealed at $300^{\circ}C$ showed the highest optical transmittance of 70% and also showed the lowest electrical resistance of $85\;{\Omega}/{\Box}$ in this study.

• 한국세라믹학회지
• /
• 제43권2호
• /
• pp.106-113
• /
• 2006

PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.

• 한국자기학회지
• /
• 제25권5호
• /
• pp.144-148
• /
• 2015

스피넬 결정구조를 지니는 $CoMn_2O_4$ 박막을 증착하였으며 이들 박막의 물리적 특성을 후열처리 이전과 이후로 비교 조사하였다. 증착온도인 $720^{\circ}C$보다 낮은 $700^{\circ}C$에서의 후열처리 과정 이후, 열처리 이전의 불분명했던 tetragonal 결정구조가 분명하여졌으며 이는 곧 표면상태의 변화로도 관측되었다. 자성특성의 경우 약 100 K에서 다결정 형태의 벌크에서는 측정할 수 없었던 상전이가 관측되었다. 상전이온도 이상의 온도에서는 전형적인 강자성 특성을 보이는 반면 상전이온도 이하에서는 페리자성 특성을 보였다. 특히 열처리 이후에는 페리자성 특성은 매우 뚜렷하여졌다. 이와 같은 결과는 후열처리과정이 $CoMn_2O_4$ 박막의 물리적 특성을 결정짓는데 필수적임을 의미한다.

• 신재생에너지
• /
• 제17권4호
• /
• pp.36-45
• /
• 2021

To remove the Cu secondary phase remaining on the surface of a CIGSSe absorber layer manufactured by the two-step process, KCN etching was applied before depositing the CdS buffer layer. In addition, it was possible to increase the conversion efficiency by air annealing after forming the CdS buffer layer. In this study, various pre-treatment/post-treatment conditions wereapplied to the S-containing CIGSSe absorber layerbefore and after formation of the CdS buffer layer to experimentally confirm whether similareffects as those of Se-terminated CIGSe were exhibited. Contrary to expectations, it was noted that CdS air annealing had negative effects.