Improvement of carrier mobility on Silicon-Germanium on Insulator MOSFEI devices with a Si-strained layer (Si-strained layer를 가지는 Silicon-Germanium on Insulator MOSFET에서의 이동도 개선 효과)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2006.11a
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- pp.7-8
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- 2006