• JSTS:Journal of Semiconductor Technology and Science
• /
• 제13권6호
• /
• pp.581-588
• /
• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
• /
• pp.220-221
• /
• 2003

Equiatomic FePt and CoPt alloy thin films have received considerable attention as possible magnetic and magneto-optic recording because of their high magnetic anisotropy energy and high coercivity. The high coercivity in these thin films is due to the presence of finely dispersed ordered FePt phase mixed with disordered FePt phase. However, a high temperature treatment, either substrate heating during deposition or post annealing, is needed to obtain the ordered L1$\_$0/ phase with high value of magneto crystalline anisotropy. Recent microstructural studies on these films suggest that the average grain size ranges from 10-50 nm and the grains are magnetically coupled between each other. On the other hand, the ultrahigh-density magnetic recording media with low media noise imposes the need of a material, which consists of magnetically isolated grains with size below 10 nm. The magnetic grain isolation can be controlled by the amount of additional non-magnetic element in the system which determines the interparticle separation and therefore the interparticle interactions. Recently, much research work has been done on various non-magnetic matrices. Preliminary studies showed that the samples prepared in B$_2$O$_3$ and Carbon matrices have shown strong perpendicular anisotropy and fine grain size down to 4nm, which suggest these nanocomposite films are very promising and may lead to the realization of a magnetic medium capable of recording densities beyond 1 Tb/in$^2$. So, in this work, the effect of Carbon doping on the magnetic properties of FePt nanoparticles were investigated.

• Journal of Magnetics
• /
• 제4권2호
• /
• pp.60-64
• /
• 1999

The addition of Co into $Nd_4Fe_{77.5-x}Co_x(HfGa)_yB_{18.5}(0$\leq$x$\leq$5, y=0, 0.5)4 was found to enhance the magnetic properties of $Fe_3B/Nd_2Fe_{14}B$ nanocomposite magnets. The enhancement resulted from the fact that Co retarded the crystallization of $\alpha$-Fe or Fe3B but accelerated that $Nd_2Fe_{14}B$. The decreased interval between the onset of crystallization temperature of Fe3B and $Nd_2Fe_{14}B$. phases enabled the grain growth of each phase to be uniform dufing a post annealing of the melt spun ribbons. The addition of 3~5 at. % Co into ternary composition $Md_4Fe_{77.5}B_{18.5}$ increased the coercivity (iHc) from 3.27 to 3.54 kOe with the enhanced remanence value (4$\pi$Mr) around 11.54 kG. From the ribbon magnets of Nd4Fe71.5Co5Hf0.5B18.5 made at 26 m/sec and annealed at 68$0^{\circ}C$ for 10 min, the magnetic properties of Br=11.54 kG, iHc=3.54 kOe, and (BH)max=14.35 MGOe were obtained from volume production line.

• ETRI Journal
• /
• 제31권6호
• /
• pp.660-666
• /
• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.131-131
• /
• 2008

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used a Monte-Carlo method. We studied the effect of channeling by Al implantation simulation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the Al distribution in 4H-SiC through the variation of the implantation energies and the corresponding ratio of the doses. The implantation energies controlled 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2\times10^{14}$ to $1\times10^{15}cm^{-2}$. In the simulation results, the Al ion distribution was deeper as increasing implantation energy and the doping level increased as increasing implantation doses. After the post-implantation annealing, the electrical properties of Al-implanted p-n junction diode were investigated by SILV ACO ATLAS numerical simulator.

• 한국자기학회지
• /
• 제18권1호
• /
• pp.14-18
• /
• 2008

본 연구에서는 Bi:YIG($Bi_{0.5}Y_{2.5}Fe_5O_{12}$) 막을 에어로졸 성막법을 이용하여 제작함에 있어서, 에어로졸을 구성하는 수송가스의 유량이 막의 자기적 특성과 광학적인 특성에 대하여 분석하였다. 직경 $100{\sim}500$ nm 의 Bi:YIG 분말을 질소 가스를 수송가스로 사용하여 성막을 실시하였고, 이 때, 수송가스의 유량은 0.5 l/min${\sim}10$ l/min 사이에서 변화시켰다. 수송가스의 유량이 증가할수록 Bi:YIG 막의 보자력은 51 Oe에서 37 Oe까지 지수함수적으로 감소하였다. 이것은 충돌에너지가 증가함에 따라 막내부 혹은 막표면의 결함이 감소하였기 때문이라고 고찰되었다. 포화자화는 유량이 증가할수록 감소하였는데, 이는 충돌에너지가 강해짐에 따라 결정이 왜곡되는 힘을 받았기 때문이라고 고찰되었다.

• 한국재료학회지
• /
• 제30권7호
• /
• pp.369-375
• /
• 2020

FDM 3D printing structures have rough surfaces and require post-treatment to improve the properties. Fumigation is a representative technique for removing surface unevenness. Surface treatment by fumigation proceeds by dissolving the surface of the protruding structure using a vaporized solvent. In this study, 3D printed PVB outputs are surface-treated with ethyl-alcohol fumigation. As the fumigation time increases, the surface flattens as ethanol dissolves the mountains on the surface of PVB and the surface valleys are filled with dissolved PVB. Through the fumigation process, the mechanical strength tends to decrease, and deformation rate increases. Ethanol vapor permeates into PVB, widening the distance between chains and resulting in weak bonding strength between chains. In order to confirm the effect of fumigation only, an annealing process is performed at 80 ℃ for 1, 5, 10, 30, and 50 minutes and the results of the fumigation are compared.

• 열처리공학회지
• /
• 제35권4호
• /
• pp.185-192
• /
• 2022

Variations in the microstructure and mechanical properties of API X70 steel processed by piping, electrical resistance welding (ERW), and post seam annealing (PSA) are investigated in this study. In the welding zone, some elongated pearlites are formed and grains coarsening occurs due to extra heat caused by the ERW and PSA processes. After the piping, the base metal shows continuous yielding behavior and a decrease in yield and impact strengths because mobile dislocation and back stress are introduced during the piping process. On the other hand, the ERW and PSA processes additionally decreased the impact strength of welding zone at room and low temperatures because some elongated pearlites easily act as crack initiation site and coarse ferrite grains facilitate crack propagation. As a result, the fracture surface of the welding zone specimen tested at low temperature revealed mostly cleavage fracture unlike the base metal specimen.

• 한국재료학회지
• /
• 제10권6호
• /
• pp.437-444
• /
• 2000

기판온도, 박막조성 및 증착후 열처리 등의 조건에 따른 ${La_{1-x}}{Sr_x}{MnO_{3-{\delta}}}$(0.19$\leq$x$\leq$0.31) 박막의 결절구조와 전기전도 특성을 조사하였다. 스퍼터법을 이용하여 $500^{\circ}C$에서 증착된 박막은 강한 <001> 우선배향성과 유사정방정(pseudo-tetrag-onal, a/c-=0.97) 결정체를 나타냈다. 이러한 박막의 단위포는 산소분위기 내에서 증착후 열처리에 의하여 입장정 결정계로 변하였다. $La_{0.67}Sr_{0.33}MnO_3$ 조성의 주타겟과 $La_{0.3}Sr_{0.7}MnO_3$조성의 보조타겟을 동시에 이용하여 박막의 조성을 조절하였다. 보조타겟의 개수에 따라 박막내의 Sr 함량(x)은 0.19-0.31 범위의 값을 나타내었으며, x값이 0.19로부터 0.31로 증가시 금소-반도체의 전이 온도가 상승하였고, 전지비저항이 대체로 감소하였다. 0.18 T의 자기장 하에서, $La_{0.69}Sr_{0.31}MnO_3$조성의 박막의 자기저항변화 MR((%) = (${\rho}_o-{\rho}_H/{\rho}_H$)는 약 390% 이었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.154-155
• /
• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.