통합 검색 | Korea Science

임수환;김철성;고태준
- 한국자기학회지
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- 제23권4호
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- pp.126-129
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- 2013
본 연구에서는 인산 용액 하에서 2차 양극 산화 기법에 의해 제작된 양극 산화 알루미나 막을 마스크로 이용하여 정렬된 니켈 나노점 구조를 제작하였다. $2{\mu}m$ 두께의 얇은 양극 산화 알루미나 막 표면에 평균 279 nm 크기의 기공구조를 형성하였으며 이를 얇은 니켈 박막의 열 증착 시 다공 구조 마스크로 이용하여 정렬된 니켈 나노점 구조를 제작하였다. 형성된 니켈 나노점의 크기는 평균 293 nm의 크기를 가지고 있으며 알루미나 막 표면상의 기공 구조의 형상을 따르고 있음을 볼 수 있었다. 제작된 나노점 구조의 자기적 특성을 상온에서 자기이력곡선의 측정을 통해 살펴보았으며 연속적인 니켈 박막과 비교하였을 때 고립된 나노점 구조로 인하여 자화용이축을 따라 각형비의 감소와 보자력의 증가가 나타남을 관찰할 수 있었다. 본 연구를 통해 양극 산화 막을 마스크로 이용한 박막 증착 과정을 통해 균일한 자기 나노점 구조를 제작할 수 있음을 확인할 수 있었다.
https://doi.org/10.4283/JKMS.2013.23.4.126 인용 PDF KSCI

임다솔;김세홍;김도희;조서현;김동원
- 한국표면공학회지
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- 제51권5호
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- pp.277-290
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- 2018
In this study, Pd-Ni-Ag alloy hydrogen separation membranes were fabricated by Pd/Ag/Pd/Ni/Pd multi-layer sputter deposition on the modified MIM(Metal Injection Molding)-PSS(Porous Stainless Steel) support and followed heat treatment. Nickel, used as an alloying element in Pd alloy membranes, is inexpensive and stable material in a hydrogen isotope environment at high temperature up to 1123 K. Hydrogen perm-selectivity of Pd-Ni-Ag alloy membranes is affected not only by composition of membrane films but also by other factors such as surface properties of PSS support, microstructure of membrane films and inter-diffused impurities from PSS support. In order to clarify the effect of surface Ni composition on hydrogen perm-selectivity of Pd-Ni-Ag alloy membranes, the other effects were significantly minimized by the formation of dense and homogeneous Pd-Ni-Ag alloy membranes. Hydrogen permeation test showed that hydrogen permeability decreased from $7.6{\times}10^{-09}$ to $1.02{\times}10^{-09}mol/m{\cdot}s{\cdot}Pa^{0.5}$ as Ni composition increased from 0 to 16 wt% and the selectivity for $H_2/N_2$ was infinite.
https://doi.org/10.5695/JKISE.2018.51.5.277 인용 PDF KSCI HTML

Mustary, Mumta Hena;Ryu, Beo Deul;Han, Min;Yang, Jong Han;Lysak, Volodymyr V.;Hong, Chang-Hee
- JSTS:Journal of Semiconductor Technology and Science
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- 제15권4호
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- pp.454-461
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- 2015
Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.
https://doi.org/10.5573/JSTS.2015.15.4.454 인용 PDF KSCI