• Title/Summary/Keyword: Polytype

Search Result 51, Processing Time 0.026 seconds

Mineralogy and Genesis of Hydrothermal Deposits in the Southeastern Part of Korean Peninsula: (3) Miryang Napseok Doposits (우리나라 동남부지역의 열수광상에 대한 광물학적 및 광상학적 연구: (3) 밀양납석 광상)

  • Kim, Soo-Jin;Kim, Jeong-Jin;Choo, Chang-Oh
    • Journal of the Mineralogical Society of Korea
    • /
    • v.5 no.2
    • /
    • pp.93-101
    • /
    • 1992
  • Several "Napseok" mines are distribute in the Miryang area where the volcanic rocks are hydrothermally altered. The "Napseok" are pyrophyllite and dickite, with a small amount of silicates such as quartz, illite, tosudite and dumortierite. Other associated minerals are oxides, hydroxides, sulfides, sulfates and phosphates. Pyrophyllite which occurs as 2M polytype exhibits that the basal spacing increases due to dehydroxylation at 750${\circ}C$. Halloysite shows tubular forms. Wavellite is precipitated in fissures during the latest stage of the hydrothermal alteration process. Five mineral zones, that is pyrophyllite-deckite, illite, halloysite, silica, and albite-chlorite zones, are recognized with decreasing alteration degree. Clay minerals were formed by leaching of Si and alkali ions fron the country rocks, considering mineral assemblages, pyrophyllite polytype and thermodynamical data reported in the literature, temperatures of formation of main clay deposits are assumed to be 270 to 350${\circ}C$.

  • PDF

Reactivated Timings of Some Major Faults in the Chugaryeong Fault Zone since the Cretaceous Period (추가령단층대 주요 단층의 백악기 이후 재활동 연대)

  • Chung, Donghoon;Song, Yungoo;Park, Changyun;Kang, Il-Mo;Choi, Sung-Ja;Khulganakhuu, Chuluunbaatar
    • Economic and Environmental Geology
    • /
    • v.47 no.1
    • /
    • pp.29-38
    • /
    • 2014
  • Recently developed illite-age-analysis (IAA) approach has been applied to determine the multiple events for the Singal and Wangsukcheon faults in the Chugaryeong fault belt, Korea. Fault reactivated events during Late Cretaceous to Paleogene events($69.2{\pm}0.3$ Ma and $27.2{\pm}0.5$ Ma) for the Singal fault and of $75.4{\pm}0.8$ Ma for the Wangsukcheon fault were determined by combined approach of the optimized illite-polytype quantification and the K-Ar age-dating of clay fractions separated from the fault clays. These absolute geochronological determinations of the multiple tectonic events recorded in the Chugaryeong fault belt are crucial to establish the tectonic evolution of the Korean Peninsula since Late Cretaceous.

The role of porous graphite plate for high quality SiC crystal growth by PVT method (고품질 4H-SiC 단결정 성장을 위한 다공성 흑연 판의 역할)

  • Lee, Hee-Jun;Lee, Hee-Tae;Shin, Hee-Won;Park, Mi-Seon;Jang, Yeon-Suk;Lee, Won-Jae;Yeo, Im-Gyu;Eun, Tai-Hee;Kim, Jang-Yul;Chun, Myoung-Chul;Lee, Si-Hyun;Kim, Jung-Gon
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.25 no.2
    • /
    • pp.51-55
    • /
    • 2015
  • The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as adding the porous graphite in the growth cell. The SiC seeds and high purity SiC source materials were placed on opposite side in a sealed graphite crucible which was surrounded by graphite insulator. The growth temperature was around $2100{\sim}2300^{\circ}C$ and the growth pressure was 10~30 Torr of an argon pressure with 5~15 % nitrogen. 2 inch $4^{\circ}$ off-axis 4H-SiC with C-face (000-1) was used as a seed material. The porous graphite plate was inserted on SiC powder source to produce a more C-rich for polytype stability of 4H-SiC crystal and uniform radial temperature gradient. While in case of the conventional crucible, various polytypes such as 6H-, 15R-SiC were observed on SiC wafers, only 4H-SiC polytype was observed on SiC wafers prepared in porous graphite inserted crucible. The defect level such as MP and EP density of SiC crystal grown in the conventional crucible was observed to be higher than that of porous graphite inserted crucible. The better crystal quality of SiC grown using porous graphite plate was also confirmed by rocking curve measurement and Raman spectra analysis.

Electric Property Analysis of SiC Semiconductor Wafer for Power Device Application

  • Kim, Jeong-Gon;An, Jun-Ho;Seo, Jeong-Du;Kim, Jeong-Gyu;Gyeon, Myeong-Ok;Lee, Won-Jae;Kim, Il-Su;Sin, Byeong-Cheol;Gu, Gap-Ryeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.11a
    • /
    • pp.207-207
    • /
    • 2006
  • We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport(PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth Grown 2"-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about $10^{17}/cm^3$ was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal without definitely exhibited lower carrier concentration and lower microplpe density as well as reduced growth rate.

  • PDF

Synthesis of AlN-SiO2-Al2O3 System (AlN-SiO2-Al2O3계로부터 AlN-Polytypes의 제조)

  • 박용갑;장병국
    • Journal of the Korean Ceramic Society
    • /
    • v.26 no.1
    • /
    • pp.31-36
    • /
    • 1989
  • In order to synthesize AlN-polytypes from AlN-SiO2-Al2O3 system, composition A (AlN/SiO2/Al2O3=1/0.3/0.05, mole ratio) and composition B(AlN-SiO2-Al2O3=1/0.2/0.05, mole ratio) were used. AlN-polytypes were produced by nitriding the mixture at 175$0^{\circ}C$~190$0^{\circ}C$ under N2 atmosphere. For lower reaction temperature, 15R phase was produced and in the case of higher reaction temperature, AlN phase was only produced. As each composition was heated at 185$0^{\circ}C$ in N2 atmosphere, produced main phases were 15R phase for composition A and 21R phase for composition B respectively. The fracture surfaces of produced reactants showed porous skeleton structure.

  • PDF

A Molecular Dynamics Simulation Study of Na- and K-birnessite Interlayer Structures (Na-, K-버네사이트 층간 구조에 대한 분자동역학 시뮬레이션 연구)

  • Park, Sujeong;Kwon, Kideok D.
    • Korean Journal of Mineralogy and Petrology
    • /
    • v.33 no.3
    • /
    • pp.143-152
    • /
    • 2020
  • Birnessite is a layered manganese oxide mineral with ~7 Å of d-spacing. Because of its high cation exchange capacity, birnessite greatly impacts the chemical compositions of ground water and fluids in sediment pores. Understanding the cation exchange mechanisms requires atomistic investigations of the crystal structures and coordination environments of hydrated cations in the interlayer. In this study, we conducted classical molecular dynamics (MD) simulations, an atomistic simulation method of computational mineralogy, for triclinic Na-birnessite and K-birnessite whose chemical formula are from previous experiments. We report our MD simulation results of the crystal structures, coordination environments of Na+ and K+, and the polytypes of birnessite and compare them with available experimental results. The simulation results well reproduced experimental lattice parameters and provided atomic level information for the interlayer cation and water molecule sites that are difficult to distinguish in X-ray experiments. We also report that the polytype of the Mn octahedral sheets is identical between Na- and K-birnessite, but the cation positions differ from each other, demonstrating a correlation between the coordination environment of the interlayer cations and the crystal lattice parameters. This study shows that MD simulations are very promising in elucidating ion exchange reactions of birnessite.

Reactivated Timings of the Yangsan Fault in the Yeonghae area based on the Mineralogical Characteristics of Fault Clays (단층암 점토광물 특성에 기초한 영해지역 양산단층의 단층활동연대 결정)

  • Hong, Seongsik;Sim, Ho;Choi, Sung-Ja;Song, Yungoo
    • Economic and Environmental Geology
    • /
    • v.53 no.6
    • /
    • pp.645-654
    • /
    • 2020
  • We present the K-Ar age dating results of <0.1㎛ fraction of the selected fault rocks from the Yangsan fault in the Yeonghae area. Based on the mineralogical characterization, the <0.1㎛ fractions were mostly composed of 1Md illite polytype, or I-S interstratified mineral, which should be formed by fault activation. Therefore, we determined the timings of fault activation events by analyzing K-Ar age-dating for the <0.1㎛ fractions. Accordingly, the activation timings of Yangsan Fault in the Yeonghae area were determined as 45.5±1.1 Ma, 50.9±1.2 Ma, 58.2±1.3 Ma, 60.8±1.4 Ma, 65.3±1.6 Ma, 66.8±1.5 Ma, 67.1±1.5 Ma, and 75.1±1.7 Ma. These results indicate that at least 5-times of major fault events occurred in the Yangsan fault from late Mesozoic to Cenozoic Era. In the outcrop, age dating results tend to be younger age from the location of the oldest sample(75.1±1.7 Ma) toward to the both sides. From the results, it suggests that the fault activation extends from the location of oldest age saple to both sides. This geochronological research of the multiple fault activation ages for the Yangsan Fault will provide crucial information for establishing the tectonic evolution model in the southeastern part of the Korean Peninsula.

Effect of Hot-zone Aperture on the Growth Behavior of SiC Single Crystal Produced via Top-seeded Solution Growth Method

  • Ha, Minh-Tan;Shin, Yun-Ji;Bae, Si-Young;Park, Sun-Young;Jeong, Seong-Min
    • Journal of the Korean Ceramic Society
    • /
    • v.56 no.6
    • /
    • pp.589-595
    • /
    • 2019
  • The top-seeded solution growth (TSSG) method is an effective approach for the growth of high-quality SiC single crystals. In this method, the temperature gradient in the melt is the key factor determining the crystal growth rate and crystal quality. In this study, the effects of the aperture at the top of the hot-zone on the growth of the SiC single crystal obtained using the TSSG method were evaluated using multiphysics simulations. The temperature distribution and C concentration profile in the Si melt were taken into consideration. The simulation results showed that the adjustment of the aperture at the top of the hot-zone and the temperature gradient in the melt could be finely controlled. The surface morphology, crystal quality, and polytype stability of the grown SiC crystals were investigated using optical microscopy, high-resolution X-ray diffraction, and micro-Raman spectroscopy, respectively. The simulation and experimental results suggested that a small temperature gradient at the crystal-melt interface is suitable for growing high-quality SiC single crystals via the TSSG method.

A Study on the Surface Modification of Graphite by CVD SiC -Growth Characteristics of SiC in a Horizontal CVD Reactor- (화학증착 탄화규소에 의한 흑연의 표면개질 연구 -수평형 화학증착반응관에서 탄화규소 성장특성-)

  • 김동주;최두진;김영욱;박상환
    • Journal of the Korean Ceramic Society
    • /
    • v.32 no.4
    • /
    • pp.419-428
    • /
    • 1995
  • Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

  • PDF

Geochemistry of Pyrophyllite Deposits in Yangsan-Milyang Areas in Korea (경남 양산 및 밀양지역 납석광상의 지구화학적 연구)

  • Cheong, Young-Wook;Chon, Hyo-Taek
    • Economic and Environmental Geology
    • /
    • v.22 no.4
    • /
    • pp.341-354
    • /
    • 1989
  • Mineralogy and geochemistry of five pyrophyllite deposits in Yangsan-Milyang area such as Cheonbulsan, Dumyong, Dongrae, Youkwang, and Sungjin mines were investigated. Pyrophyllite ores consist mainly of pyrophyllite, sericite, and quartz with some amounts of kaolinite and pyrite. Polytype of pyrophyllite is 2M. Sericite has two polytypes of 1M and 2M1. The ${\delta}^{18}O$ values of pyrophyllite from the Cheonbulsan and the Dumyong mines were measured as 0.23-0.60‰ and 3.40‰, respectively, and those of montmorillonite and kaolinite from the Dumyong mine were in the range of 11.90-12.06‰. This low oxygen isotope composition provides conclusive evidence for hydrothermal activity in the studied area. Contents of major elements are more useful than those of trace elements to discriminate altered zones such as pyrophyllite, sericite, argillic, and andalusite zones from the surrounding rocks. Particularly, contents of $K_2O$, $Na_2O$ and CaO are helpful to identify alteration zones from the discriminant and the cluster analysis of multi-element data.

  • PDF