• 제목/요약/키워드: Polymeric Thin Film

검색결과 104건 처리시간 0.027초

Biomimetically Engineered Polymeric Surfaces for Micro-scale Tribology

  • Singh R. Arvind;Kim Hong-Joon;Kong Ho-Sung;Yoon Eui-Sung
    • KSTLE International Journal
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    • 제7권1호
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    • pp.14-17
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    • 2006
  • In this paper, we report on the replication of surface topography of natural leaf of Lotus onto thin polymeric films using a capillarity-directed soft lithographic technique. PDMS molds were used to replicate the surface. The replication was carried out on poly(methyl methacrylate) (PMMA) film coated on silicon wafer. The patterns so obtained were investigated for their friction properties at micro-scale using a ball-on-flat type micro-tribo tester, under reciprocating motion. Soda lime balls (1 mm diameter) were used as counterface sliders. Friction tests were conducted at a constant applied normal load of $3000{\mu}N$ and speed of 1mm/s. All experiments were conducted at ambient temperature ($24{\pm}1^{\circ}C$) and relative humidity ($45{\pm}5%$). Results showed that the patterned samples exhibited superior tribological properties when compared to the silicon wafer and non patterned sample (PMMA thin film). The reduced real area of contact projected by the surfaces was the main reason for their enhanced friction property.

Investigations into mechanical durability of thin display coatings

  • Currie, Edwin;Thies, Jens;Meijers, Guido;Chawla, Chander
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.981-984
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    • 2005
  • Many flat panel displays displays rely on polymeric substrates with thin film coatings, such as anti-reflective, anti-static and hardcoats, to improve optical and mechanical properties of the display. In this paper we briefly discuss the principles underlying the mechanical robustness of such coated structures, and examine two fitness-for-use tests currently employed by the industry. We compare the teachings with some results obtained with our hardcoats and anti-reflective coatings.

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졸-겔법에 의한 PLZT 합성과 강유전성 박막 제조 (Ferroelectric PLZT Thin Films Prepared by Sol-Gel Route)

  • 오영제;김정기;주기태;현상훈;정형진
    • 한국세라믹학회지
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    • 제29권11호
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    • pp.870-876
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    • 1992
  • Lead lanthanum zirconate titanate (PLZT, 6/65/35) powders, crack-free and dense thin films have been prepared by polymeric sol-gel process. Pyrolysis of the gel, crystallization and optical transmittance behavior of the PLZT thin film onto sapphire substrate have been studied. Esterification occurs during synthesis of PLZT complexation. Crystalline Pb phase was transiently formed near 450$^{\circ}C$. Content of perovskite phase in the films were increased with increasing thickness of film, but the kinetics of formation of perovskite phase in films was slower than that of powders. Transmittance of the films was decreased with increasing the temperature of heat treatment. Ferroelectric hysteresis loop measurements indicated increments of remanent polarization and coercive field for plenty more of perovskite phase.

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MOCVD 법에 의해 제조된 YBCO 초전도 박막의 물성에 대한 완충층 템플릿의 영향 (Effect of the Buffered-template on the Property of YBCO Superconducting Film Deposited by MOCVD Method)

  • 전병혁;최준규;김찬중
    • Progress in Superconductivity
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    • 제8권1호
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    • pp.27-32
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    • 2006
  • [$YBa_2Cu_3O_{7-x}$] thin films were deposited on various buffered-templates by a metal organic chemical vapor deposition(MOCVD). Three different templates of $CeO_2/YSZ/CeO_2/pure-Ni(CYC),\;CeO_2/YSZ/Y_2O_3/Ni-3at.%W(YYC)$ and $CeO_2/IBAD-YSZ$/stainless steel were used. The Ni and Ni-W alloy tapes were biaxially textured by cold rolling and annealing heat treatment. The dense YBCO films were grown on both the IBAD and YYC templates with no microcrack, while the YBCO films on the CYC templates were grown with the formation of microcracks and NiO. The YBCO film on the YYC template showed the higher $I_c$ than that on CYC template. Especially, the IBAD templates with a thin $CeO_2$(type I) and thick $CeO_2$(type II) top layer were used to compare the deposition nature of the YBCO on them. Comparing the current property of the YBCO films on IBAD templates, the YBCO film deposited on thick $CeO_2$ layer was better than the film on thin $CeO_2$ layer.

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고분자 박막 내에 담지 된 실리카 마이크로입자의 광산란 효과에 의한 광에너지 상향전환 효율 향상 (Light Scattering-enhanced Upconversion Efficiency in Silica Microparticles-embedded Polymeric Thin Film)

  • 최현석;이학래;이명수;박정민;김재혁
    • 공업화학
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    • 제30권1호
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    • pp.88-94
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    • 2019
  • 삼중항-삼중항 소멸에 의한 광에너지 상향전환 기술(triplet-triplet annihilation upconversion, TTA-UC)은 특정 조건을 만족시키는 유기물들의 에너지 전달 및 융합 과정에 의해 저에너지의 광자를 고에너지의 광자로 변환시키는 신개념 에너지 전환기술이다. 본 연구에서는 실리카 마이크로입자(silica microparticle, SM)를 UC가 구현되는 폴리우레탄 박막 내에 담지 시켜 입사되는 광원의 광산란 효과를 도모함으로써 TTA-UC 효율을 향상시키고, 그 기작에 대해 탐구하였다. Seeded growth method를 통하여 약 950 nm의 균일한 크기를 갖는 SM을 합성하였으며, UC 박막 내에 담지 된 SM의 농도를 증가시킴에 따라 635 nm 광원 조사 시 430-570 nm 영역에서의 UC 세기가 최대 1.64배 증가함을 확인하였다. 삼중항 lifetime 측정을 통하여 광감응제 PdTPBP와 전자수용체 perylene 간의 triplet-triplet energy transfer(TTET) 효율을 분석한 결과, 박막 내에 담지 된 SM이 chromophore 간의 TTET에 미치는 영향은 미미한 것으로 나타났다. 또한, 입사 강도-UC 세기의 상관관계를 분석하여 TTA-UC 효율을 분석한 결과, SM이 박막 내에 존재할 경우 UC 양자효율이 최대 1.5배 향상됨을 확인하였다.

졸-겔법에 의한 이트리안 안정화 지프코니아박막의 결정화 (Crystallization of Yttria-Stabilized-Zirconia Film by Sol-Gel Process)

  • 서원찬;조차제;윤영섭;황운석
    • 한국표면공학회지
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    • 제30권3호
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    • pp.183-190
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    • 1997
  • Fabrication and crystallization characteristics of yttria($T_2O_3$) stabilized zirconia(YSZ) thin film by sol-gel process were studied. YSZ sol was synthesized with zirconium n-propoxide($Zr(OC_3H_7)_4)$) and yttrium nitrate pentahydrate ($Y(NO_3)_3.5H_2O$). YSZ film was prepared by depositing the polymeric sol on porous $Al_2O_3$ substrate by spin-coating, and the film characteristics were investigated by FRIR, TG-DTA, XRD, DSC, optical microscopy and SEM. The film topology was uniform and cracks were not found. It was found that the annealing temperature and the concentration of stabilizer affect the crystallization of YSZ film. The YSZ film began to crystallize from amorphous to tetragonal phase at 40$0^{\circ}C$, and it was not converted to cubic structure until $1100^{\circ}C$. It seemed that the grains were formed over $700^{\circ}C$and the average grain size was obtained about 0.2$\mu\textrm{m}$.

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Characteristic and moisture permeability of SiOxCy thin film synthesized by Atmospheric pressure-plasma enhanced chemical vapor deposition

  • Oh, Seung-Chun;Kim, Sang-Sik;Shin, Jung-Uk
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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    • pp.171-171
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    • 2011
  • Atmospheric pressure- plasma enhanced chemical vapor deposition(AP-PECVD)Processes are recognized as promising and cost effective methods for wide-area coating on sheets of steel, glass, polymeric web, etc. In this study, $SiO_xC_y$ thin films were deposited by using AP-PECVD with a dielectric barrier discharge(DBD). The characteristic of $SiO_xC_y$ thin films were investigated as afunction of the HMDSO/O2/He flow rate. And the moisture permeability of $SiO_xC_y$ thin films was studied. The $SiO_xC_y$ thin films were characterized by the Fourier-transformed Infrared(FT-IR) spectroscopy and also investigated by X-ray photo electron spectroscopy(XPS), Auger Electron Spectroscopy(AES). The moisture permeability of $SiO_xC_y$ thin films was investigated by $H_2O$ permeability tester Detailed experimental results will be demonstrated through th present work.

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게이트 절연막에 사용된 점착층에 대한 영향 (Effect of Adhesion Layer on Gate Insulator)

  • 이동현;형건우;표상우;김영관
    • 한국전기전자재료학회논문지
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    • 제19권4호
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    • pp.357-361
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    • 2006
  • The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride and 4,4'-oxydianiline. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2/Vs$, threshold voltage of -0.8 V and on-off current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

OTFT의 게이트 절연막에 사용된 점착층에 대한 영향 (The Effect of Adhesion layer on Gate Insulator for OTFTs)

  • 이동현;형건우;표상우;김정수;김영관
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.70-71
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    • 2005
  • The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 6FDA and ODA. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2$/Vs, threshold voltage of -0.8 V and on-of current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

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Effect of Side Chain Structure of Gate Insulator on Characteristics of Organic Thin Film Transistor

  • Yi, Mi-Hye;Ha, Sun-Young;Pyo, Seung-Moon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.487-490
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    • 2006
  • We propose a new method to achieve well-defined surface properties of the polymeric gate dielectrics without using SAM technique and inserting another organic/inorganic buffer layer. Pentacene thin film transistors(OTFTs) fabricated with the polyimide gate insulators with different side chain structures were demonstrated. Further, a relationship between the surface properties (surface morphology, surface energy, etc) of the films and the performance of OTFTs have investigated, which will be given in more detail in presentation.

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