• 제목/요약/키워드: Polymeric Thin Film

검색결과 104건 처리시간 0.023초

SPM을 이용한 Si 표면위에 플라즈마 처리된 소수성 박막의 나노 트라이볼로지적 특성 연구 (Nanotribological Characteristics of Plasma Treated Hydrophobic Thin Films on Silicon Surfaces using SPM)

  • 윤의성;양승호;공호성;고석근
    • Tribology and Lubricants
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    • 제19권2호
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    • pp.109-115
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    • 2003
  • Nanotribological characteristics between a Si$_3$N$_4$ AFM tip and hydrophobic thin films were experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM (atomic force microscope) and LFM (lateral force microscope) modes in various .ranges of normal load. Plasma-modified thin polymeric films were deposited on Si-wafer (100). Results showed that wetting angle of plasma-modified thin polymeric film increased with the treating time, which resulted in the hydrophobic surface and the decrease of adhesion and friction. Nanotribological characteristics of these surfaces were compared with those of other hydrophobic surfaces, such as DLC, OTS and IBAD-Ag coated surfaces. Those of OTS coated surface were superior to those of others, though wetting angle of plasma-modified thin polymeric film is higher.

Estimation of Thermal Stresses Induced in Polymeric Thin Film Using Boundary Element Methods

  • Lee, Sang-Soon
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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    • pp.27-33
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    • 2002
  • The residual thermal stresses at the interface corner between the elastic substrate and the viscoelastic thin film due to cooling from cure temperature down to room temperature have been studied. The polymeric thin film was assumed to be thermorheologically simple. The boundary element method was employed to investigate the nature of stresses on the whole interface. Numerical results show that very large stress gradients are present at the interface comer and such stress singularity might lead to edge cracks or delamination.

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고분자막을 점착층으로 사용한 유기 박막 트랜지스터의 안정성 (Stability of Organic Thin-Film Transistors Fabricated by Inserting a Polymeric Film)

  • 형건우;표상우;김준호;김영관
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.61-62
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    • 2006
  • In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.

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SPM을 이용한 Si 표면위에 플라즈마 처리된 소수성 박막의 나노 트라이볼로지적 특성 연구 (Nanotribological characteristics of plasma treated hydrophobic thin films on silicon surfaces using SPM)

  • 윤의성;박지현;양승호;한흥구;공호성;고석근
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2001년도 제34회 추계학술대회 개최
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    • pp.35-42
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    • 2001
  • Nanotribological characteristics between a Si$_3$N$_4$ AFM tip and hydrophobic thin films were experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes in various ranges of normal load. Plasma-modified thin polymeric films were deposited on Si-wafer (100). Results showed that wetting angle of plasma-modified thin polymeric film increased with the treating time, which resulted in the hydrophobic surface and the decrease of adhesion and friction. Nanotribological characteristics of these surfaces were compared with those of other hydrophobic surfaces, such as DLC, OTS and IBAD-Ag coated surfaces. Those of OTS coated surface was superior to those of others, though wetting angle of plasma-modified thin polymeric film is higher.

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고분자 박막에서 발생하는 수분응력 해석 (Analysis of Moisture Stresses Induced in Polymeric Thin Film)

  • 이상순
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
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    • pp.137-142
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    • 2002
  • This paper deals with the stress singularity induced at the interface corner between the elastic substrate and the viscoelastic thin film as the polymeric film absorbs moisture from the ambient environment. The boundary element method is employed to investigate the behavior of Interface stresses. The order of the singularity is obtained numerically for a given viscoelastic model. It is shown that the stress singularity factor is relaxed with time, while the order of the singularity increases with time for the viscoelastic model considered.

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Viscoelastic Analysis of an Interface Edge Crack in a Bonded Polymeric Film

  • Lee, Sang-Soon
    • 반도체디스플레이기술학회지
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    • 제9권3호
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    • pp.35-39
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    • 2010
  • Interfacial stress singularity induced in an analysis model consisting of the polymeric thin film and the elastic substrate has been investigated using the boundary element method. The interfacial singular stresses between the viscoelastic thin film and the elastic substrate subjected to a uniform moisture ingression are investigated for the case of a small interfacial edge crack. It is assumed that moisture effects are assumed to be analogous to thermal effects. Then, the overall stress intensity factor for the case of a small interfacial edge crack is computed. The numerical procedure does not permit calculation of the limiting case for which the edge crack length vanishes.

A Composite of Metal and Polymer Films: Thin Nickel Film Coated on a Polypropylene Film after Atmospheric Plasma Induced Surface Modification

  • Song, Ho-Shik;Choi, Jin-Moon;Kim, Tae-Wan
    • Transactions on Electrical and Electronic Materials
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    • 제12권3호
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    • pp.110-114
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    • 2011
  • Polymeric films of high chemical stability and mechanical strength covered with a thin metallic film have been extensively used in various fields as electric and electronic materials. In this study, we have chosen polypropylene (PP) as the polymer due to its outstanding chemical resistance and good creep resistance. We coated thin nickel film on PP films by the electroless plating process. The surfaces of PP films were pre-treated and modified to increase the adhesion strength of metal layer on PP films, prior to the plating process, by an environment-friendly process with atmospheric plasma generated using dielectric barrier discharges in air. The surface morphologies of the PP films were observed before and after the surface modification process using a scanning electron microscope (SEM). The static contact angles were measured with deionized water droplets. The cross-sectional images of the PP films coated with thin metal film were taken with SEM to see the combined state between metallic and PP films. The adhesion strength of the metallic thin films on the PP films was confirmed by the thermal shock test and the cross-cutting and peel test. In conclusion, we made a composite material of metallic and polymeric films of high adhesion strength.

솔-젤법에 의한 강유전성 PZT 박막의 제조;(II) 치밀화 및 결정화에 미치는 촉매의 영향 (Preparation of Ferroelectric PZT Thin Film by Sol-Gel Processing; (II) Effect of Catalysts on Densification and Crystallization)

  • 김병호;박성호;김병호
    • 한국세라믹학회지
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    • 제32권7호
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    • pp.783-792
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    • 1995
  • Sol-Gel derived ferroelectric PZT thin films were fabricated on ITO/Glass and Si/SiO2 substrates. In order to investigate the effect of catalysts on the densification and crystallization of PZT thin films, a nitric acid or ammonium hydroxide was added to the PZT stock solution at the state of partial hydrolysis reaction. The measured pH for a stable PZT sol was 5.2~9.3. In case of an acid-catalyzed PZT sol, a highly condensed particulate PZT sol was formed by accelerating the hydrolysis reaction. But weakly branched polymeric PZT sol was formed with a base-catalyzed condition. The difference in densification behavior was not found in the pH range of added catalyst, but the refractive index of PZT thin film was increased rapidly as the annealing temperature increased. The PZT thin film annealed at 54$0^{\circ}C$ for 10 min was fully densified and its refractive index was above 2.4. When the annealing temperature increased, the transition from the pyrochlore phase to perovskite appeared at 54$0^{\circ}C$. The base-catalyzed PZT thin film suppressed to form the pyrochlore phase and proceeded effectively to convert the perovskite phase. This was due to the formation of polymeric molecular structure by controlling the hydrolysis and condensation reaction through the additiion of the ammonium hydroxide.

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펨토초 레이저를 이용한 폴리머 박막 재료 초미세 공정에 관한 연구 (Investigation on Femtosecond Laser Processing of Polymeric Thin Films)

  • 정세채
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.669-670
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    • 2006
  • Two-photon absorption coefficient of a series of dyes in polymer thin films was determined by measuring the femtosecond laser ablation threshold. The threshold value of polymeric thin films decreased gradually when the dopant increased. The two-photon absorption coefficient of the dye molecules dispersed in the polymer film was estimated by using the theoretical relationship between the ablation threshold of the blended polymeric thin films and the dye concentration. The relative values of two-photon absorption cross-section are in good agreement with those measured in solution. On the other hand, the absolute values are smaller than the latter.

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Photoinitiator-free Photosensitive Polyimide Gate Insulator for Organic Thin Film Transistor

  • Pyo, Seung-Moon;Lee, Moo-Yeol;Jeon, Ji-Hyun;Son, Hyun-Sam;Yi, Mi-Hye
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.885-888
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    • 2004
  • We have prepared and investigated the properties of photoinitiator-free photosensitive polyimide gate insulatos for organic thin-film transistors (OTFTs). The precursor was prepared from a dianhydride, 3,3',4,4'-Benzophenone tetracarboxylic dianhydride (BTDA) and novel aromatic diamine, 7-(3,5-diaminobenzoyloxy) coumarine (DA-CM). Photo-patternability of the polyimide precursor film and surface morphology of the films before and after photo-patterning process were investigated and negative pattern with a resolution of 50 ${\mu}m$ was obtained nicely. In addition, we have fabricated OTFTs with pentacene and photosensitive polyimide as a semiconductor and a gate insulator; respectively. According to the device geometry, the ${\mu}$, current modulation ratio and subthreshold swing of the devices were around 0.2${\sim}$0.4 $cm^2$/Vs, more than $10^5$ and around 3${\sim}$5 V/dec, respectively.

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