• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.315-320
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• 2013

The composites composed of conducting polymer (MEH-PPV), CdTe nanoparticles, and multiwalled carbon nanotubes (MWNTs) were spectroscopically and electrically characterized in their thin films. The composite films were prepared by spray coating. These composites were prepared from the mixture solution of MEH-PPV and CdTe-embedded MWNTs, in which CdTe nanoparticles were electrostatically bound to MWNTs. UV/vis and PL spectra were analyzed to investigate the optical absorbance and emission of the composite films. In addition, their structural, electrochemical, and electrical properties were studied by transmission electron microscopy, cyclic voltammetry, and I-V measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.650-650
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• 2013

Although imprinted nanopatterns of organic polymer can be modified by the heat treatment [1], it generally requires high process temperatures and is material-dependent since the heat-induced mass loss of the organic polymer is greatly affected by its chemical characteristics. When oxygen is added during the annealing process, one can reduce the process temperature as well as the dependence of the materials. With the oxygen, line width reduction of a polymer (SU-8) patterns could be accomplished at temperature of as low as $250^{\circ}C$ which was not possible in the heat only process. This oxidative line width reduction can be dramatically promoted with the introduction of oxygen plasma. The oxygen plasma, with its highly-reactive oxygen species, vigorously etches away the organic materials, proven to be extremely effective line with reduction method. It is, however, very hard to control the extent and homogeneity of the etching, particularly of very fine patterns. Here, we report an effective and reliable line width reduction method of imprinted nanopatterns by combined plasma and heat treatment. The merits of this process include the reduction of process temperature, time and material-dependence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1171-1174
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• 2004

Leakage current of the polymer arrester(42kV, 10kA, Class3) for railroad line applied actually field was observed and electrical characteristics of arrester before and after applied actually field were investigated. During applied actually field, leakage current of arresters were $610{\sim}647{\mu}A$ in AN SAN line and $500{\mu}A$ in YUNG DONG line. After applied actually field, electrical characteristics of arrester, such as insulation test, reference voltage test, leakage current test and partial discharge current test, wasn't variation as before applied actually field.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.32-37
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• 2002

This paper gives the basic mechanical properties of indium-tin-oxide (ITO) films on polymer substrates which are exposed to externally and thermally induced bending force. By using modified Storney formula including triple layer structure and bulge test measuring the conductive changes of patterned ITO islands as a function of bending curvature, the mechanical stability of ITO films on polymer substrates was intensively investigated. The numerical analyses and experimental results show thermally and externally induced mechanical stresses in the films are responsible for the difference of thermal expansion between the ITO film and the substrate, and leer substrate material and its thickness, respectively. Therefore, a gradually ramped heating process and an organic buffer layer were employed to improve the mechanical stability, and then, the effects of the buffer layer were also quantified in terms of conductivity-strain variations. As a result, it is uncovered that a buffer layer is also a critical factor determining the magnitude of mechanical stress and the layer with the Young's modulus lower than a specific value can contribute to relieving the mechanical stress of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.207-207
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• 2008

Modern industry has focused on processing that produce low- loss dielectric substrates used complex micron-sized devices using tick film technologies such as tape casting and slip casting. However, these processes have inherent disadvantages fabricating high density interconnect with embedded passives for high speed communication electronic devices. Here, we have successfully fabricated porous alumina dielectric layer infiltrated with polymer solution by using inkjet printing process. Alumina suspensions were formulated as dielectric ink that were optimized to use in inkjet process. The layer was confirmed by field emission scanning electron microscope (FE-SEM) for measuring microstructure and volume fraction. In addition, the reaction kinetics and electrical properties were characterized by FT-IR and the impedance analyzer. The volume fraction of alumina in porous dielectric alumina layer is around 70% much higher than that in the conventional process. Furthermore, after infiltration on the dielectric layer using polymer resins such as cyanate ester. Excellent Q factors of the dielectric is about 200 when confirmed by impedance analyzer without any high temperature process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.101-105
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• 1998

This paper describes anisotropic etching technology of highly doped polysilicon. The main etching gases are $Cl_2$ and $SiCl_4$ for reactive ion etching of polysilicon. The mixed $CHCl_3$ to main etching gas makes polymer on etching side wall, so it prevents side etching of polysilicon. The etch rate of polysilicon is increased with increasing RF power. But the etching rate is decreased as the flow rate of $CHCl_3$ is increased with fixed RF power. The etch selectivity of polysilicon and $SiO_2$ is about 12:1. And that of polysilicon and $Si_3N_4$ is about 19:1. In the main etching gas condition, the slope of polysilicon is same as that of photoresist. But in the mixed $CHCl_3$ condition, the slope of polysilicon is larger than that of photoresist. This represents that the polymer made on side wall by added $CHCl_3$ prevents side etching, so anisotropic etching can be possible by polymer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.360-366
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• 2013

For conventional electrical actuators, the materials are mainly made up of metals, which mean they are prone to corrosion and electrical sparking. Replacing these systems with polymer metal composite based materials can be solved both problems. Considering their excellent electromechanical property, low device fabrication cost, light weight, and good electrical conductivity, the actuator based on ionic polymer metal composite (IPMC) was fabricated using Nafion film, NaOH 0.1 molar solution, and Au electrode. IPMCs exhibit good electrostatic property which means they can in principle be used in making actuators based on electromechanical motions. The resistance measurements of Nafion film after soaking in NaOH and deionized water were demonstrated and compared each other. The result of sample soaked in NaOH showed better electrical conductivity than in deionized water. The fabricated IPMC actuator exhibits a large deformation of bending displacement of approximately 9 mm with applied low AC voltage 6.89 V at 2.84 Hz. The result of computer simulation was also very similar and shown as a bending displacement of 8.6085 mm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.510-514
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• 2003

We have studied the alignment of liquid crystals (LCs) on homeotropic polymeric surface that is scanned using an atomic force microscope (AFM) tip by optical polarizing microscopy and computer simulation. The scanned areas on one substrate are 5 $\mu\textrm{m}$ ${\times}$ 5 $\mu\textrm{m}$, 10 $\mu\textrm{m}$ ${\times}$ 10 $\mu\textrm{m}$, and 20 $\mu\textrm{m}$ ${\times}$ 20 $\mu\textrm{m}$ and this substrate is assembled to another substrate coated. with homeotropic polymer. The fabricated micro-LC cell using two substrates does not show any hysteresis and disclination lines inside the nano-rubbing areas, while changing voltage up and down. This indicates that the pretilt angle exists in the areas, thereby forming a hybrid LC configuration. From the experimental and computer simulation results, we can understand that the AFM rubbing clearly changes surface status of homeotropic alignment layer and causes the pretilt angle to an initial scanning direction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.671-679
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• 2007

[ $SrAl_2O_4:Eu^{2+},\;Dy^{3+}$ ] phosphor was synthesized using the impregnation method, and its photoluminescence and long-afterglow properties were investigated, A mixture of $Sr(NO_3)_2,\;Al(NO_3)_2\;9H_2O,\;EuCl_3\;6H_2O,\;DyCl_3\;6H_2O,\;NdCl_3\;6H_2O$ salts were dissolved in distilled water and impregnating into the polymer precursor. After drying, the impregnated mixture was heat treated at $900-1400^{\circ}C$ for 2h in a $N_2-H_2$ reduction atmosphere. The microstructure and crystal structure of the $SrAl_2O_4:Eu^{2+},\;Dy^{3+}$ powders were examined by scanning electron microscopy and X-ray diffraction, respectively. The photoluminescence spectra showed an excitation band along over wide wavelength of 250-450nm, and a broaden emission with a maxima peak at 360nm. In addition, the spectra also showed a good long after glow that decayed over a 1000sec period after 10 min excitation illumination.