Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)
- Volume 11 Issue 2
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- Pages.101-105
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- 1998
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- 1226-7945(pISSN)
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- 2288-3258(eISSN)
Anisotropic Etching Technology of Highly Doped Polysilicon by Mixed Chloroform
클로로포름($CHCl_3$ )을 첨가한 고농도 폴리실리콘 이방성 식각 기술
- Received : 1997.08.26
- Accepted : 1997.12.15
- Published : 1998.02.15
Abstract
This paper describes anisotropic etching technology of highly doped polysilicon. The main etching gases are