• 한국재료학회지
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• 제18권9호
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• pp.507-510
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• 2008

Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.334-338
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• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.

• Macromolecular Research
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• 제11권6호
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• pp.511-513
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• 2003

Hydroxyl groups were introduced onto the surface of a silicon wafer by O$_2$ plasma treatment. Poly(l-lactide) (1-PLA) was attached onto the surface-modified silicon wafer by the ring-opening polymerization of l-lactide using the hydroxyl group as an initiator. Lamellar single crystals of 1-PLA were grown directly on the 1-PLA-attached silicon wafer from a 0.025% solution in acetonitrile at 5$^{\circ}C$. A well-separated, lozenge-shaped, monolayered lamellar single crystal was prepared because the 1-PLA-attached silicon wafer acts as an initial nucleus.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1422-1424
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• 1994

This paper deals with piezoresistive humidity sensor using polycrystalline silicon (Poly-Si ) with membrane in sensors of semiconductor. Poly-Si piezoresistors which have no temperature dependancy are deposited on silicon wafer, membrane is formed with micromachining technology, then polyimide is formed as a hygroscopic layer. Whereas the principle of conventional humidify sensors are based on the change in electrical properties of the material, the humidity induced volume change of a polyimide layer leads to a deformation of a silicon membrane in this case. This deformation is transformed into an output voltage by Poly-Si piezoresistive. Wheatstone bridge. Fabricated piezoresistive humidity sensors showed good linearity, response time, and long term stability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.445-446
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• 2005

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.323-327
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• 2006

We present the most recent experimental results on Thin-beam Directional X'tallization (TDX), a rapid excimer-laser-based crystallization method for creating extremely high-quality large-grained polycrystalline silicon films on glass substrates. We will present experimental data obtained with our prototype Gen 2 tool, and discuss the ability to produce different types of poly-Si material.

• 전자공학회논문지A
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• 제28A권5호
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• pp.375-379
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• 1991

Formation of TiAs precipitate through the reaction between TiSi2 with C54 structure and heavily doped arsenic ion in poly-silicon, and influence of TiSAs and silicon distribution resulted from the reaction TiSi2+As ->2Si on the morphology degradation have been studied.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.126-129
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• 2009

In this study, it was aimed to develop the re-use technology of ultra-fine silicon powders, by-products during the current production process of high purity poly-Si feedstock. For this goal, the compacts of the silicon powders were tried to fabricate by CIP (Cold Isostatic Pressing) method using silicon rubber mold without chemical binder materials. The density ratio of the silicon powder compacts reached 74%. In order to simulate the actual handling and charging conditions of feedstock material in casting process, a shaking test was carried out and mass loss measured. Finally, the silicon powder compacts were melted using a cold crucible induction melting method and the purity assessment was conducted by Hall effect measurement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.64-66
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• 1993

The charateristics of low temperature poly-Si thin films with different growth condition were investigated and poly-Si TFTs were fabricated on solid phase crystallized (SPC) amorphous silicon films and as-deposited poly-Si films. The performance of devices fabricated on the SPC amorphous silicon films was shown to be superior to that of devices fabricated on as-deposited poly-Si films. It was found that the characteristics of low-temperature poly-Si thin films such as surface roughness, crystal texture and grain size strongly influenced the poly-Si TFT performance.

• Transactions on Electrical and Electronic Materials
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• 제6권2호
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• pp.57-62
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• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.