• Title/Summary/Keyword: Poly-Fuse

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Design of 4Kb Poly-Fuse OTP IP for 90nm Process (90nm 공정용 4Kb Poly-Fuse OTP IP 설계)

  • Hyelin Kang;Longhua Li;Dohoon Kim;Soonwoo Kwon;Bushra Mahnoor;Panbong Ha;Younghee Kim
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.16 no.6
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    • pp.509-518
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    • 2023
  • In this paper, we designed a 4Kb poly-fuse OTP IP (Intellectual Property) required for analog circuit trimming and calibration. In order to reduce the BL resistance of the poly-fuse OTP cell, which consists of an NMOS select transistor and a poly-fuse link, the BL stacked metal 2 and metal 3. In order to reduce BL routing resistance, the 4Kb cells are divided into two sub-block cell arrays of 64 rows × 32 rows, with the BL drive circuit located between the two 2Kb sub-block cell arrays, which are split into top and bottom. On the other hand, in this paper, we propose a core circuit for an OTP cell that uses one poly-fuse link to one select transistor. In addition, in the early stages of OTP IP development, we proposed a data sensing circuit that considers the case where the resistance of the unprogrammed poly-fuse can be up to 5kΩ. It also reduces the current flowing through an unprogrammed poly-fuse link in read mode to 138㎂ or less. The poly-fuse OTP cell size designed with DB HiTek 90nm CMOS process is 11.43㎛ × 2.88㎛ (=32.9184㎛2), and the 4Kb poly-fuse OTP IP size is 432.442㎛ × 524.6㎛ (=0.227mm2).

Design of Poly-Fuse OTP IP Using Multibit Cells (Multibit 셀을 이용한 Poly-Fuse OTP IP 설계)

  • Dongseob kim;Longhua Li;Panbong Ha;Younghee Kim
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.17 no.4
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    • pp.266-274
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    • 2024
  • In this paper, we designed a low-area 32-bit PF (Poly-fuse) OTP IP, a non-volatile memory that stores data required for analog circuit trimming and calibration. Since one OTP cell is constructed using two PFs in one select transistor, a 1cell-2bit multibit PF OTP cell that can program 2bits of data is proposed. The bitcell size of the proposed 1cell-2bit PF OTP cell is 1/2 of 12.69㎛ × 3.48㎛ (=44.161㎛2), reducing the cell area by 33% compared to that of the existing PF OTP cell. In addition, in this paper, a new 1 row × 32 column cell array circuit and core circuit (WL driving circuit, BL driving circuit, BL switch circuit, and DL sense amplifier circuit) are proposed to meet the operation of the proposed multbit cell. The layout size of the 32bit OTP IP using the proposed multibit cell is 238.47㎛ × 156.52㎛ (=0.0373㎛2) is reduced by about 33% compared that of the existing 32bit PF OTP IP using a single bitcell, which is 386.87㎛ × 144.87㎛ (=0.056㎛2). The 32-bit PF OTP IP, designed with 10 years of data retention time in mind, is designed with a minimum programmed PF sensing resistance of 10.5㏀ in the detection read mode and of 5.3 ㏀ in the read mode, respectively, as a result of post-layout simulation of the test chip.