• 한국세라믹학회지
• /
• 제41권9호
• /
• pp.637-641
• /
• 2004

We investigated the effects of SiH$_4$ gas on the surface of Hf-silicate films during the deposition of polycrystalline (poly) Si films and the thermal stability of sputtered Hf-silicate films in poly Si/Hf-silicate structure by using High Resolution Transmission Electron Microscopy (HR-TEM) and X-ray Photoelectron Spectroscopy (XPS). Hf-silicate films were deposited by using DC-mag-netron sputtering with Hf target and Si target and poly Si films were deposited at 600$^{\circ}C$ by using Low Pressure Chemical Vapor Deposition (LPCVD) with SiH$_4$ gas. After poly Si film deposition at 600$^{\circ}C$, Hf silicide layer was observed between poly Si and Hf-silicate films due to the reaction between active SiH$_4$ gas and Hf-silicate films. After annealing at 900$^{\circ}C$, Hf silicide, formed during the deposition of poly Si, changed to Hf-silicate and the phase separation of the silicate was not observed. In addition, the Hf-silicate films remain amorphous phase.

• Bulletin of the Korean Chemical Society
• /
• 제32권4호
• /
• pp.1303-1309
• /
• 2011

Melt copolymerization reactions of bis(diethylamino)tetramethyldisiloxane with several aryldiols were carried out to afford poly(carbotetramethyldisiloxane)s containing fluorescent aromatic chromophore groups in the polymer main chain: poly{oxy(4,4'-biphenylene)oxytetramethyldisiloxane}, poly{oxy(1,4-phenylene)oxytetramethyldisiloxane}, poly[oxy{(4,4'-isopropylidene)diphenylene}oxytetramethyldisiloxane], poly[oxy{(4,4'-hexafluoroisopropylidene)diphenylene}oxytetramethyldisiloxane], poly{oxy(2,6-naphthalene)oxytetramethyldisiloxane}, poly[oxy{4,4'-(9-fluorenylidene)diphenylene}oxytetramethyldisiloxane], poly{oxy(fluorene-9,9-dimethylene)oxytetramethyldisiloxane}, and poly[oxy{4,4'-(9-fluorenylidene)bis(2-phenoxyethylene)}oxytetramethyldisiloxane]. These materials are soluble in common organic solvents such as $CHCl_3$ and THF. The FTIR spectra of all the polymers exhibit the characteristic Si-O-C stretching frequencies at 1021-1082 $cm^{-1}$. In the THF solution, the polymeric materials show strong maximum absorption peaks at 215-311 nm, with strong maximum excitation peaks at 250-310 nm, and strong maximum fluorescence emission bands at 310-360 nm. TGA thermograms indicate that most of the polymers are stable up to $200^{\circ}C$ with a weight loss of less than 10% in nitrogen.

• 한국전기전자재료학회논문지
• /
• 제24권7호
• /
• pp.525-531
• /
• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• 유기물자원화
• /
• 제13권3호
• /
• pp.97-104
• /
• 2005

본 연구에서는 폴리에스테르 비닐과 고밀도 폴리에틸렌(HDPE)의 분해에서 수분 함량, pH, 연소시 무게에 대하여 조사하였다. 폴리에스테르 비닐은 30일 동안의 음식물 쓰레기의 미생물에 의하여 분해가 이루어졌으나, 고밀도 폴리에틸렌(HDPE)은 분해가 전혀 이루어지지 않았다. 폴리에스테르계 생분해성 비닐은 음식물의 미생물에 의하여 10일후에 급속하게 분해가 일어났으며, 그 결과 무게가 감소함을 나타내었다. 연소반응의 $300^{\circ}C{\sim}600^{\circ}C$ 사이에서는 완전연소가 이루어졌으며, 음식물 속의 미생물에 의한 분해로 인하여 pH는 4.26에서 7.6으로 증가하였다. 그리고 poly ester vinyl은 60일 동안의 운전에서 90% 이상의 분해가 이루어졌다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권1호
• /
• pp.24-29
• /
• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• 한국전기전자재료학회논문지
• /
• 제21권1호
• /
• pp.1-4
• /
• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

• 폴리머
• /
• 제25권3호
• /
• pp.385-390
• /
• 2001

oxyethylene/oxypropylene 공중합체의 존재하에 L-lactide를 중합시킴에 의해 poly(L-lactic acid) (PLLA) (A)와 polyether (B)로 이루어진 A-B-A block copoly(ester-ether)를 합성하였으며, 이들 블록 공중합체는 세그멘트를 도입함에 의해 PLLA에 유연성이 부여되었고, 표면에서의 미세상분리 구조로 인한 항혈전성의 개질을 확인하기 위하여 AFM사진을 관찰한 결과, PLLA와 비교하여 블록 공중합체는 필름표면의 요철성이 현저하게 저하하여 매끄러운 것을 확인하였으며 따라서, 표면의 요철이 항혈전성의 증가와 깊은 관계가 있음을 확인하였다.

• 대한전자공학회논문지SD
• /
• 제42권2호
• /
• pp.15-22
• /
• 2005

System-on-Glass 아날로그 회로를 구현하기 위해 요구되는 저항 matching 및 poly-Si TFT 특성을 기존 아날로그 회로를 이용하여 조사하였다. 저항 값, poly-Si TFT의 문턱전압 및 이동도의 matching 조건을 디스플레이 시스템의 해상도에 따라 유도하였다. 또한, 소스 드라이버를 구현하기 위해 요구되는 poly-Si TFT의 유효 이동도를 다양한 패널 크기에 따라서 분석하였다.

• Composites Research
• /
• 제12권6호
• /
• pp.15-21
• /
• 1999

비닐에스테르 수지와 탄소섬유의 계면접착력 향상을 위하여 탄소섬유에 물에 분산된 carboxy modified poly(hydroxy ether) (C-PHE)와 수용성 고분자인 poly(hydroxy ether ethanol amine) (PHEA) 및 비수용성인 poly(hydroxy ether) (PHE) 로 코팅하였다. 고분자로 코팅된 탄소섬유와 수지의 계면전단강도는 micro-droplet 시편을 제조하여 측정하였으며,각 시료마다 30개 이상의 시편을 사용하였다. 접착기구 규명을 위하여 코팅재로 사용된 고분자와 비닐에스테르 수지와 계면에서 확산현상을 고찰하였으며, 접착성 시험 후 탄소섬유의 표면을 SEM을 이용하여 분석하였다. PHE와 C-PHE코팅으로 탄소섬유의 계면전단강도가 크게 증가하였으며, 이는 이들 고분자의 비닐에스테르에 대한 우수한 용해도(solubility)때문으로 보여진다. 하지만 용해도가 낮은 PHEA코팅은 접착력 향상에 효과가 없었다.

• 공업화학
• /
• 제5권1호
• /
• pp.182-188
• /
• 1994

PMMA와 본질적으로 비상용성인 PB에 MMA를 그라프트 중합시켜서 이를 PMMA와 블렌드하여 그라프트율 변화에 따른 내충격성, 인장강도, haze 변화 및 상용성변화를 SEM, DSC, Instrone 등을 통하여 관찰하였다. Poly(butadlene-g-MMA)의 그라프트율이 증가함에 따라서, MMA 그라프트로 인한 PMMA와의 상용성의 증가에 의하여 PMMA-poly(butadlene-g-MMA) 블렌드의 인장강도, 내충격성 및 투명성 등이 그라프트하지 않은 PB-PMMA 블렌드에 비하여 향상되는 결과를 나타내었다. 반면에, 투명성은 PMMA 단독수지에 비해서는 다소 떨어지는 결과를 나타내었다.