• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.178-179
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• 1999

• Journal of the Semiconductor & Display Technology
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• v.3 no.1
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• pp.15-20
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• 2004

Through shallow trench isolation (STI) chemical mechanical polishing (CMP) tests, we investigated the dependence of pad surface temperature on the abrasive and additive concentrations in ceria slurry under varying pressure using blanket film wafers. The pad surface temperature after CMP increased with the abrasive concentration and decreased with the additive concentration in slurries for the constant down pressure. A possible mechanism is that the additive adsorbed on the film surfaces during polishing decreases the friction coefficient, hence the pad surface temperature gets lower with increasing the additive concentration. This difference in temperature was more remarkable for the higher concentration of abrasives. In addition, in-situ measurement of spindle motor was carried out during oxide and nitride polishing. The averaged motor current for oxide film was higher than that for nitride film, meaning the higher friction coefficient.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.839-845
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• 2007

In this paper, a polishing pad has been analyzed in detail, to understand surface phenomena of polishing process. The polishing pad plays a key role in polishing process and is one of the important layer in polishing process, because it is a reaction layer of polishing[1]. Pad surface physical property is also ruled by pad profile. The profile and roughness of pad is controlled by different types of conditioning tool. Conditioning tool add mechanical force to pad, and make some roughness and profile. Formed pad surface will affect on polishing performance such as RR (Removal Rate) and uniformity in CMP Pad surface condition is changed by conditioning tool and dummy run and is stable at final. And this research, we want to reduce break-in and dummy polishing process by analysis of pad surface and artificial machining to make stable pad surface. The surface treatment or machining enables to control the surface of polishing pad. Therefore, this research intends to verify the effect of the buffing process on pad surface through analysis of the removal rate, friction force and temperature. In this research, urethane polishing pad which is named IC pad(Nitta-Haas Inc.) and has micro pore structure, is studied because, this type of pad is most conventional type.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.1
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• pp.26-32
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• 2012

Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study will report the characteristic of wafer according to processing time, machining speed and pressure which have major influence on the abrasion of Si wafer polishing. It is possible to evaluation of wafer abrasion by load cell and infrared temperature sensor. The characteristic of wafer surface according to processing condition is selected to use a result data that measure a pressure, machining speed, and the processing time. This result is appeared by the characteristic of wafer surface in machining condition. Through that, the study cans evaluation a wafer characteristic in variable machining condition. It is important to obtain optimal condition. Thus the optimum condition selection of ultra precision Si wafer polishing using load cell and infrared temperature sensor. To evaluate each machining factor, use a data through each sensor. That evaluation of abrasion according to variety condition is selected to use a result data that measure a pressure, machining speed, and the processing time. And optimum condition is selected by this result.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.360-361
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• 2005

Rapid progress in IC fabrication technology has strong demand in polishing of silicon wafer to meet the tight specification of nanotopography and surface roughness. One of the important issues in Si CMP is the stabilization of polishing pad. If a polishing pad is not stabilized before main Si wafer polishing process, good polishing result can not be expected. Therefore, new pad must be subjected into break-in process using dummy wafers for a certain period of time to enhance its performance. After the break-in process, the main Si wafer polishing process must be performed. In this study, the characteristics of break-in process were investigated in Si wafer polishing. Viscoelastic behavior, temperature variation of pad and friction were measured to evaluate the break-in phenomenon. Also, it is found that the characteristic of the break-in seems to be related to viscoelastic behavior of pad.

• Journal of the Speleological Society of Korea
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• no.82
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• pp.8-12
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• 2007

In this paper, we have investigated the characteristics of the magnetic abrasive using sludge on polishing of internal finishing of seamless stainless steel tube applying magnetic abrasive polishing. Either green carborundum(GC) grain was used to resin sludge at a low temperature, and the sludge of magnetic abrasive powder was synthesized and crushed into 200 meshes. Surface roughness was measured before and after polishing, and more than 38% of improvement of surface roughness was achieved when grain was used under a specific condition. Even though some degree of surface roughness due to deeper scratches still exist, but the result showed a prospective magnetic abrasive polishing using sludge with green carborundum grains.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.122-125
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• 2003

We investigated the effect of the abrasive and additive concentrations in Nano ceria slurry on the pad surface temperature under varying pressure through chemical mechanical polishing (CMP) test using blanket wafers. The pad surface temperature after CMP increased with the abrasive concentration and decreased with increase of the additive concentration in slurries for the constant down pressure. A possible mechanism is that the additive adsorbed on the film surface during polishing decreases the friction coefficient, hence the pad surface temperature gets lower with increase of the additive concentration. This difference of temperature was more remarkable for the higher concentration of abrasives. In addition, in-situ measurement of spindle motor was carried out during oxide and nitride polishing. The averaged motor current for oxide film was higher than that for nitride film, which means the higher friction coefficient.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.1
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• pp.1-6
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• 2012

The polishing of silicon wafers has an important role in semiconductor manufacturing. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, pH value, down-force, slurry ratio are investigated, time is used as a fixed factor. This study carried out a series of experiments at varying platen, chuck rpm and oscillation cpm taking particular note of the difference between the rpm and the affect it has on the surface roughness. In this experiment determine the optimum conditions for polishing silicone wafers.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.7
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• pp.14-21
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• 2019

Large-diameter hydraulic devices such as the hydraulic reservoir in aircraft that serves to balance the hydraulic pressure in the various hydraulic devices in the cabin and to store hydraulic oil are operated by the internal piston systems. However, since this operates in an environment with high temperature and humidity, it may cause the inner surface to flake during its operation. Therefore, an anodizing surface treatment is applied to improve the corrosion resistance, abrasion resistance, and smooth operation. However, anodizing increases the surface roughness. Accordingly, the polishing process that improves the surface roughness after anodizing is important. However, the existing polishing process is performed manually, which results in an inefficient process. Therefore, in this study, we selected the optimum polishing conditions for effective polishing using the experimental design to improve the polishing process for the $Al_2O_3$ film that forms after anodization. Through experiments, we confirmed that the surface uniformity after polishing was superior as the feed rate was slower when the same polishing time had been applied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.77-80
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• 2004

In this paper, we have investigated the characteristics of the magnetic abrasive using sludge on polishing of internal finishing of seamless stainless steel (STS304) tube applying magnetic abrasive polishing. Either white alumina (WA) or green carborundum (GC) grain was used to resin sludge at a low temperature, and the sludge of magnetic abrasive powder was synthesized and crushed into 200 meshes. Surface roughness was measured before and after polishing, and more than 40% of improvement of surface roughness was achieved when WA grain was used under a specific condition. Even though some degree of surface roughness due to deeper scratches still exist, but the result showed a prospective magnetic abrasive polishing using sludge with WA or GC grains.