• Title/Summary/Keyword: Polishing temperature

Search Result 194, Processing Time 0.027 seconds

Surface Treatment Effect on Electrochemical characteristics of Al Alloy for ship

  • Lee, Seung-Jun;Kim, Seong-Jong
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 2017.05a
    • /
    • pp.149-149
    • /
    • 2017
  • Aluminum alloys have poor corrosion resistance compared to the pure aluminum due to the additive elements. Thus, anodizing technology artificially generating thick oxide films are widely applied nowadays in order to improve corrosion resistance. Anodizing is one of the surface modification techniques, which is commercially applicable to a large surface at a low price. However, most studies up to now have focused on its commercialization with hardly any research on the assessment and improvement of the physical characteristics of the anodized films. Therefore, this study aims to select the optimum temperature of sulfuric electrolyte to perform excellent corrosion resistance in the harsh marine environment through electrochemical experiment in the seawater upon generating porous films by variating the temperatures of sulfuric electrolyte. To fabricate uniform porous film of 5083 aluminum alloy, we conducted electro-polishing under the 25 V at $5^{\circ}C$ condition for three minutes using mixed solution of ethanol (95 %) and perchloric (70 %) acid with volume ratio of 4:1. Afterward, the first step surface modification was performed using sulfuric acid as an electrolyte where the electrolyte concentration was maintained at 10 vol.% by using a jacketed beaker. For anode, 5083 aluminum alloy with thickness of 5 mm and size of $2cm{\times}2cm$ was used, while platinum electrode was used for cathode. The distance between the two was maintained at 3 cm. Anodic polarization test was performed at scan rate of 2 mV/s up to +3.0 V vs open circuit potential in natural seawater. Surface morphology was compared using 3D analysis microscope to observe the damage behavior. As a result, the case of surface modification showed a significantly lower corrosion current density than that without modification, indicating excellent corrosion resistance.

  • PDF

Silicon-Wafer Direct Bonding for Single-Crystal Silicon-on-Insulator Transducers and Circuits (단결정 SOI트랜스듀서 및 회로를 위한 Si직접접합)

  • Chung, Gwiy-Sang;Nakamura, Tetsuro
    • Journal of Sensor Science and Technology
    • /
    • v.1 no.2
    • /
    • pp.131-145
    • /
    • 1992
  • This paper has been described a process technology for the fabrication of Si-on-insulator(SOI) transducers and circuits. The technology utilizes Si-wafer direct bonding(SDB) and mechanical-chemical(M-C) local polishing to create a SOI structure with a high-qualify, uniformly thin layer of single-crystal Si. The electrical and piezoresistive properties of the resultant thin SOI films have been investigated by SOI MOSFET's and cantilever beams, and confirmed comparable to those of bulk Si. Two kinds of pressure transducers using a SOI structure have been proposed. The shifts in sensitivity and offset voltage of the implemented pressure transducers using interfacial $SiO_{2}$ films as the dielectrical isolation layer of piezoresistors were less than -0.2% and +0.15%, respectively, in the temperature range from $-20^{\circ}C$ to $+350^{\circ}C$. In the case of pressure transducers using interfacial $SiO_{2}$ films as an etch-stop layer during the fabrication of thin Si membranes, the pressure sensitivity variation can be controlled to within a standard deviation of ${\pm}2.3%$ from wafer to wafer. From these results, the developed SDB process and the resultant SOI films will offer significant advantages in the fabrication of integrated microtransducers and circuits.

  • PDF

The effects of the surface defects on the hydroformability of extruded aluminum tubes (알루미늄 압출 관재의 표면 결함이 하이드로포밍 성형에 미치는 영향도에 관한 연구)

  • Kim D. H.;Kim B. J.;Park K. S.;Moon Y. H.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
    • /
    • 2005.10a
    • /
    • pp.247-250
    • /
    • 2005
  • The need for improved fuel efficiency, weight reduction has motivated the automotive industry to focus on aluminum alloys as a replacement for steel-based alloy. To cope with the needs for high structural rigidity with low weight, it is forecasted that substantial amount of cast components will be replaced by tubular parts which are mainly manufactured by the extruded aluminum tubes. The extrusion process is utilized to produce tubes and hollow sections. Because there is no weld seam, the circumferential mechanical properties may be uniform and advantageous for hydroforming. However the possibility of the occurrence of a surface defect is very high, especially due to the temperature increase from forming at high pressure when it comes out of the bearing and the roughness of the bearing, which cause the surface defects such as the dies line and pick-up. And when forming a extruded aluminum tube, the free surface of the tube becomes rough with increasing plastic strain. This is well known as orange peel phenomena and has a great effect not only on the surface quality of a product but also on the forming limit. In an attempt to increase the forming limit of the tubular specimen, in the present paper, surface asperities generated during the hydroforming process are polished to eliminate the weak positions of the tube which lead to a localized necking. It is shown that the forming limit of the tube can be considerably improved by simple method of polishing the surface roughness during hydroforming. And also the extent of the crack propagation caused by dies lines generated during the extrusion process is evaluated according to the deformed shape of the tube.

  • PDF

Fabrication of SOI Structures with Buried Cavities for Microsystems SDB and Electrochemical Etch-stop (SDB와 전기화학적 식각정지에 의한 마이크로 시스템용 매몰 공동을 갖는 SOI 구조의 제조)

  • Chung, Gwiy-Sang;Kang, Kyung-Doo;Choi, Sung-Kyu
    • Journal of Sensor Science and Technology
    • /
    • v.11 no.1
    • /
    • pp.54-59
    • /
    • 2002
  • This paper describes a new process technique for batch process of SOI(Si-on-Insulator) structures with buried cavities for MEMS(Micro Electro Mechanical System) applications by SDB(Si-wafer Direct Bonding) technology and electrochemical etch-stop. A low-cost electrochemical etch-stop method is used to control accurately the thickness of SOI. The cavities were made on the upper handling wafer by Si anisotropic etching. Two wafers are bonded with an intermediate insulating oxide layer. After high-temperature annealing($1000^{\circ}C$, 60 min), the SDB SOI structure with buried cavities was thinned by electrochemical etch-stop. The surface of the fabricated SDB SOI structure have more roughness that of lapping and polishing by mechanical method. This SDB SOI structure with buried cavities will provide a powerful and versatile substrate for novel microsensors arid microactuators.

AN ELECTROCHEMICAL STUDY ON THE OXIDATION' AND REDUCTION OF DENTAL AMALGAM (치과용 아말감의 산화환원에 관한 전기화학적 연구)

  • Yi, In-Bog;Lee, Myong-Jong
    • Restorative Dentistry and Endodontics
    • /
    • v.18 no.2
    • /
    • pp.431-445
    • /
    • 1993
  • The purpose of this study was to observe corrosion characteristics of six dental amalgams and was to analyse corrosion products electrochemically. After each amalgam alloy and Hg was triturated as the direction of the manufacturer by using mechanical amalgamator, the triturated mass was inserted into the cylinderical metal mold ($12{\times}10mm$) and was condensed with 160kg/$cm^2$ by using the hydrolic press. The specimen was removed from the mold and was stored at room temperature for 1 week, and was polished with amalgam polishing kit. The anodic and cathodic polarization curve was obtained by using cyclic voltammetric method with 3-electrode potentiostat in saline for each amalgam and Ag, Sn, Cu plate specimen at $37{\pm}0.5^{\circ}C$. The potential sweep range was -1.7V~0. 4V(vs SCE) in working electrode and scan rate was 50mV/s and the exposed surface area of each specimen to the electrolytic solution was $0.79cm^2$. The results were as follows. 1. In anodic-cathodic polarization curve of amalgam specimens, two anodic current rising areas and two cathodic current peaks were obtained at the low Cu amalgam(CF, CS) specimen and three anodic current rising areas and three cathodic current peaks were obtained at the high Cu amalgam (TY, DS, HV) specimen. 2. As this compared with the anodic and cathodic current peak potentials of Sn, Cu and Ag specimen, the first cathodic current peak I c was caused by the reduction of divalent tin salt, second cathodic current peak IIIc results from the reduction of quadravalent tin salt, and third cathodic current peak me results from the reduction of copper salt. 3. As reverse potential sweeping was done repeatedly, anodic current was decreased slightly in all amalgam specimens.

  • PDF

Preparation of Inorganic Ultrafiltration Membrane by Anodic Oxidation in Oxalic Acid (수산전해액하에서 양극산화에 의한 무기 UF막의 제조)

  • Lee, Chang-Woo;Hong, Young-Ho;Chang, Yoon-Ho;Hahm, Yeong-Min
    • Applied Chemistry for Engineering
    • /
    • v.9 no.4
    • /
    • pp.536-541
    • /
    • 1998
  • The porous size alumina membrane was prepared by anodic oxidation with current method in an aqueous solution of oxalic acid. The aluminum metal plate was pretreated with thermal oxidation, chemical polishing and electropolishing before anodic oxidation. Membrane thickness and pore size distribution were investigated with several anodizing conditions; reaction temperature, cumulative charge, electrolyte concentration and current density. The porous alumina membrane obtained was $55{\sim}75{\mu}m$ thick with straight micropore of 45~100nm. Also, the porous alumina membrane has an uniform pore diameter and pore distribution. It was inorganic ultrafiltration membrane as a kind of the ceramic membrane.

  • PDF

Application of Surfactant added DHF to Post Oxide CMP Cleaning Process (계면활성제가 첨가된 DHF의 Post-Oxide CMP 세정 공정에의 적용 연구)

  • Ryu, Chung;Kim, You-Hyuk
    • Journal of the Korean Chemical Society
    • /
    • v.47 no.6
    • /
    • pp.608-613
    • /
    • 2003
  • In order to remove particles on surface of post-oxide CMP wafer, new cleaning solution was prepared by mixing with DHF (Diluted HF), nonionic surfactant PAAE (Polyoxyethylene Alkyl Aryl Ether), DMSO (Dimethylsulfoxide) and D.I.W.. Silicone wafers were intentionally contaminated by silica, alumina and PSL (polystylene latex) which had different zeta potentials in cleaning solution. This cleaning solution under megasonic irradiation could remove particles and metals simultaneously at room temperature in contrast to traditional AMP (mixture of $NH_4OH,\;H_2O_2$ and D.I.W) without any side effects such as increasing of microroughness, metal line corrosion and deposition of organic contaminants. This suggests that this cleaning solution would be useful future application with copper CMP in brush cleaning process as well as traditional post CMP cleaning process.

AN EXPERIMENTAL STUDY FOR MICROLEAKAGE OF AMALGAM USING RESIN ADHESIVE LINERS IN PRIMARY MOLAR TOOTH (유구치 아말감 수복물에서 레진 접착성 이장재의 미세 변연 누출에 관한 비교 연구)

  • Kim, Jong-Tae;Choi, Byung-Jai;Lee, Jae-Ho;Lee, Jong-Gap
    • Journal of the korean academy of Pediatric Dentistry
    • /
    • v.23 no.2
    • /
    • pp.401-414
    • /
    • 1996
  • The purpose of this study was to compare the marginal leakage of resin liner which was used as a liner to amalgam restoration. Control group composed of no liner group, copalite group and experimental group composed of All-bond 2, Vitrebond, Superbond D-liner applied groups were evaluated. Cl.V preparation with a size of $3{\times}2{\times}1.5mm$ on 70 extracted primary molars were made and applied appropriate liners for each groups. After amalgam filling and polishing, polished specimens underwent temperature changed from $5^{\circ}C\;to\;55^{\circ}C$ a thousand times. After thermocycling, specimens were placed in 2% methylene blue dye solution for 72 hours in an incubator set at $37^{\circ}C$. The teeth were sectioned buccolingually and the degree of dye penetration was observed with a spectroscopy. (${\times}30$) The following results were obtained. 1. Vitrebond, All-bond 2, Superbond D-liner group exhibited a statistically significant lower degree of dye penetration than no liner and copalite group. (Kruskal-Wallis analysis, P<0.05) 2. No liner group and copalite group exhibited a similar degree of dye penetration. (Mann-Whitney analysis, P>0.05) 3. All-bond 2 group exhibited a statistically significant lower degree of dye penetration than Vitrebond group, (Mann-Whitney analysis, P<0.05) Superbond D-liner group also exhibited a lower degree of dye penetration than Vitrebond group but was statistically insignificant. (Mann-Whitney analysis, P>0.05)

  • PDF

The a-Si:H/poly-Si Heterojunction Solar Cells

  • Kim, Sang-Su;Kim, do-Young;Lim, Dong-Gun;Junsin Yi;Lee, Jae-Choon;Lim, Koeng-Su
    • Journal of Electrical Engineering and information Science
    • /
    • v.2 no.5
    • /
    • pp.65-71
    • /
    • 1997
  • We present heterojunction solar cells with a structure of metal/a-Si:H(n-i-p)/poly-Si(n-p)/metal for the terrestrial applications. This cell consists fo two component cells: a top n-i-p junction a-Si:Hi cell with wide-bandgap 1.8eV and a bottom n-p junction poly-Si cell with narrow-bandgap 1.1eV. The efficiency influencing factors of the solar cell were investigated in terms of simulation an experiment. Three main topics of the investigated study were the bottom cell with n-p junction poly-Si, the top a-Si:H cell with n-i-p junction, and the interface layer effects of heterojunction cell. The efficiency of bottom cell was improved with a pretreatment temperature of 900$^{\circ}C$, surface polishing, emitter thickness of 0.43$\mu\textrm{m}$, top Yb metal, and grid finger shading of 7% coverage. The process optimized cell showed a conversion efficiency about 16%. Top cell was grown by suing a photo-CVD system which gave an ion damage free and good p/i-a-Si:H layer interface. The heterojunction interface effect was examined with three different surface states; a chemical passivation, thermal oxide passivation, and Yb metal. the oxide passivated cell exhibited the higher photocurrent generation and better spectral response.

  • PDF

Hydrogen Perm-Selectivity Property of the Palladium Hydrogen Separation Membranes on Porous Stainless Steel Support Manufactured by Metal Injection Molding (금속 사출성형 방식의 다공성 스테인리스 강 지지체에 형성된 팔라듐 수소 분리막의 투과 선택도 특성)

  • Kim, Se-Hong;Yang, Ji-Hye;Lim, Da-Sol;Kim, Dong-Won
    • Journal of the Korean institute of surface engineering
    • /
    • v.50 no.2
    • /
    • pp.98-107
    • /
    • 2017
  • Pd-based membranes have been widely used in hydrogen purification and separation due to their high hydrogen diffusivity and infinite selectivity. However, it has been difficult to fabricate thin and dense Pd-based membranes on a porous stainless steel(PSS) support. In case of a conventional PSS support having the large size of surface pores, it was required to use complex surface treatment and thick Pd coating more than $6{\mu}m$ on the PSS was required in order to form pore free surface. In this study, we could fabricate thin and dense Pd membrane with only $3{\mu}m$ Pd layer on a new PSS support manufactured by metal injection molding(MIM). The PSS support had low surface roughness and mean pore size of $5{\mu}m$. Pd membrane were prepared by advanced Pd sputter deposition on the modified PSS support using fine polishing and YSZ vacuum filling surface treatment. At temperature $400^{\circ}C$ and transmembrane pressure difference of 1 bar, hydrogen flux and selectivity of $H_2/N_2$ were $11.22ml\;cm^{-2}min^{-1}$ and infinity, respectively. Comparing with $6{\mu}m$ Pd membrane, $3{\mu}m$ Pd membrane showed 2.5 times higher hydrogen flux which could be due to the decreased Pd layer thickness from $6{\mu}m$ to $3{\mu}m$ and an increased porosity. It was also found that pressure exponent was changed from 0.5 on $6{\mu}m$ Pd membrane to 0.8 on $3{\mu}m$ Pd membrane.